用户名: 密码: 验证码:
磁控溅射WO_3和NiO_x互补型电致变色薄膜
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
非晶结构WO_3薄膜具有优良的阴极电致变色特性,是最有发展前景的电致变色材料之一;NiO_x薄膜为典型的阳极优质电致变色材料,是电致变色器件对电极层的首选材料;由WO_3薄膜和NiO_x薄膜组成的具有双电致变色膜层的互补型结构电致变色器件不仅简化了器件制作工序,而且其性能也优于传统器件,应用前景广阔。
     本文利用中频孪生非平衡磁控溅射技术,以纯金属为靶材,沉积WO_3、Ti-WO_3和NiO_x电致变色薄膜,优化薄膜的沉积工艺参数以提高薄膜电致变色性能,并通过多种测试手段研究薄膜的结构、成分以及电致变色性能等,得到了以下主要结果:
     采用中频孪生磁控溅射技术沉积的WO_3薄膜为非晶结构;XPS分析表明,薄膜表面的钨仅以+6价形式存在,而薄膜内部则由单质钨和多价态钨的氧化物组成;提高沉积气氛中的氧气含量可增大薄膜中的O/W的原子数比,薄膜的电致变色性能也逐渐提高。其中氧气流量百分比为95%条件下沉积的透明WO_3薄膜电致变色性能明显优于其他薄膜,在光波波长633 nm处薄膜着色态与透射态透光率差值可达63%。WO_3薄膜结构有利于Li~+离子的注入和抽取,具有较好的循环稳定性和较快响应速度。
     不同热处理温度对WO_3薄膜影响的研究表明,经200℃热处理后WO_3薄膜仍为非晶结构,薄膜中元素的结合能没有发生变化,薄膜保持了较好变色性能,在光波波长633nm处,薄膜着色态与褪色态透光率差值接近70%;经350℃温度热处理后WO_3薄膜向多晶结构转变,晶化后薄膜的电荷容量明显减少,电致变色性能下降。原因是薄膜经热处理晶化后其结构不利于Li~+离子的注入和抽取,使薄膜致色性能下降。
     对Ti掺杂WO_3薄膜的分析表明,Ti元素是以+4价形式存在。由于Ti~(4+)和W~(6+)的离子半径相近,因此Ti~(4+)离子以置换W~(6+)离子的方式掺杂于薄膜中。虽然Ti掺杂不影响WO_3薄膜中W的化合价态,膜内W元素价态与未掺杂WO_3薄膜相同,但对WO_3薄膜的结构和性能有较大影响。原因在于Ti掺杂使WO_3薄膜的表面和内部颗粒明显细化,薄膜晶化温度升高。适量Ti掺杂能有效提高WO_3薄膜响应速度和寿命、改善薄膜可逆性、减小薄膜致色驱动电压,是由于Ti的掺入抑制了WO_3颗粒结晶长大,薄膜非晶化程度提高,薄膜结构更有利于离子的注入和抽取。本实验中Ti掺杂量为5.1%的薄膜性能较好,随着Ti掺杂含量的增加,薄膜电致变色性能有所下降。
     制备了质地均匀NiO_x薄膜,薄膜为纳米晶结构,晶粒尺寸小于4.5 nm,薄膜表面粗糙度Ra = 1.659 nm;以Li~+离子为致色粒子,在±3V电压作用下NiO_x薄膜对可见光调制范围可达30%以上,薄膜电致变色性能较好;纳米晶NiO_x薄膜结构易于Li~+离子注入和抽取,电致变色响应速度快,对可见光的调节作用较大,可与WO_3薄膜组成互补型电致变色器件,对器件性能起到补充作用;制备的结构为Glass/ITO/WO_3/LiClO_(4-)PC/NiO_x/ITO/Glass的互补型电致变色器件,其电致变色性能明显优于结构为Glass/ITO/WO_3/LiClO_4-PC/ITO/Glass的电致变色器件,对可见光调制范围较宽,在波长633 nm处透光率差值可达81%,表现出优异的控光能力,器件响应速度快,说明互补型电致变色薄膜能显著提高器件的调控光的能力。
Amorphous WO_3 film is probably the most promising one of various electrochromic materials due to its excellent electrochromic properties.NiO_x film is the preferred typical anode electrochromic material as the counter electrode layer of electrochromic device.The devices with the above two electrochromic films greatly simplify the procedure of fabrication and exhibit better performance than the traditional devices,which offer wide prospect of application.
     In this paper,amorphous WO_3,Ti-doped WO_3 and NiO_x films were prepared by mid-frequency dual-target magnetron sputtering using pure metal targets.With the optimization of technical parameters,the films showed good electrochromic property.The microstructure,morphology composition and electroehemical property of the films were characterized with many technologies,and the primary conclusions were listed as follow:
     The WO_3 films deposited by mid-frequency dual-target magnetron sputtering method at room temperature are amorphous.XPS spectra show that there is only W~(6+) on the film surface, and contains simple substance and mixed valence tungsten in the inner of the films.The atomic ratio of O/W increases with the oxygen content in the atmosphere,and the electrochromic performance is improved,too.In this paper,the transparent WO_3 films prepared in a sputtering atmosphere at 95%oxygen content show good electrochromism.The variation of average transmittance difference between the bleached and colored state can reach up to 63%at the wavelength 633 nm.It is because the porous structure of the films is more convenient for Li~+ ions injection and extraction.
     The study on the effect of heat treatment on the WO_3 films structure at different temperatures show that heat treatment does not change the binding energy of the elements,the WO_3 films remain amorphous after annealing at 200℃and keep good electrochromism, which the variation of average transmittance difference between the bleached and colored state can reach up to 70%at the wavelength 633 nm.The films crystallize after annealing at 350℃,the charge capacity and electrochromism decrease significantly because the structure of the crystallized film makes difficult for Li~+ ions to inject and extract.
     The analysis on the Ti-doped WO_3 electrochromic films shows that the valence of titanium in films is +4,without mixed valence.Ti~(4+) can substitute W~(6+) due to the similar radius with each other.Ti-doping does not affect the valence of tungsten but considerably influence the structure and electrochromic performance of the WO_3 films.For instance,the particle size is refined and crystallization temperature increase,Ti-doped can enhance the response speed and service life,improve the reversibility and reduce the value of drive voltage,as the grain growing can be restrained by Ti-doping,and the sructure is more convenient for Li~+ ions to inject into films corresponding to the doped films than un-doped ones.In this paper,the optimum amount of doped titanium is 5.1%,and the electrochromic performance degrades with the increase of Ti-doping content.
     The deposited nanosized nickel oxide(NiO_x) films are of relatively clean surface that the average grain size is about 4.5 nm and the roughness(Ra) was 1.659 nm.Under±3V,the films show good electrochromic properties whose different transmittance between the bleached and colored state can reach up to 30%using Li~+ as colouring ions in the visible region.The structure of as-deposited nanosized NiO_x films is beneficial for ions' injection and extraction.The NiO_x films have fast response speed and good regulatory effect in visible region,which served as a supplement to WO_3 films in complementary electrochromic device. The laminated Glass/ITO/WO_3/LiClO_4-PC/NiO_x/ITO/Glass complementary electrochromic device was studied.The results indicate that the complementary device has more excellent electrochromic characters than the structure of Glass/ITO/WO_3/LiClO_4-PC/ITO/Glass device, and show good electrochromism and fast response speed with the variation of average transmittance difference between the bleached and colored state can reach up to 81%at the wavelength 633 nm.
引文
[1]Granqvist C.G.,Avendano E.,Azens A.,et al.Electrochromic coatings and devices:survey of some recent advances.Thin Solid Films.2003,442:201-211.
    [2]Lee E.S.,Dibartolomeo D.L.Application issues for large-area electrochromic windows in commercial buildings.Solar Energy Materials & Solar Cells.2002,71:465-491.
    [3]陈杰,朱振才,王汝笠,等.WO_3薄膜的电致变色特性研究.光学学报.1996,16(10):1475-1478.
    [4]Platt J.R.Electrochromism,a possible change of color producible in dyes by an electric field.J Chem Phys.1961,34(3):862-864.
    [5]Deb S.K.Electrochromism in tungsten oxide(WO3) film.Appl.Opt.1969,58(3):190-198.
    [6]Schoot C.J.,Ponjee J.J.,van Dam H.T.,et al.New electrochromic memory display.Appl.Phys.Lett.1973,23(2):64-65.
    [7]Lampert Carl M.Electrochromic materials and devices for energy efficient windows.Solar Energy Materials.1984,11(1-2):1-27.
    [8]张征林,王怡红,王宏,等.电致变色材料及应用.电子元件与材料.1999,18(01):32-37.
    [9]饶峰,汪建勋,韩高荣.电子束蒸发制备氧化钨、氧化镍薄膜的电致变色性能.材料科学与工程学报.2004,22(05):683-687.
    [10]Aegerter M.A.,Avellaneda C.O.,Pawlicka A.,et al.Electrochromism in materials prepared by the sol-gel process.Journal of Sol-Gel Science and Technology.1997,8(1-3):689-696.
    [11]Deb S.K.Optical and photoelectric properties and colour centres in thin films of tungsten oxide.Philos.Mag.1973,27:801-821.
    [12]Chang I.F.,Gilbert B.L.,Sun T.I.,et al.Electrochemichromic Systems for Display Applications.J.Electrochem.Soc.1975,122(7):955-962.
    [13]Hurditch R.Electrochromism in hydrated tungsten-oxide films.Electronics Letters.1975,11(7):142-144.
    [14]Faughnan B.W.,Crandall R.S.,Heyman P.M.,et al.Electrochromism in WO3 amorphous films.RCA Review.1975,36(01):177-197.
    [15]Schirmer O.F.,Wittwer V.,Baur G.,et al.Dependence of WO3 electrochromic absorption on crystallinity.Journal of the Electrochemical Society.1977,124(5):749-753.
    [16]Vaivars G.,Azens A.,Granqvist C.G.,et al.Proton conducting polymer composites for electrochromic devices.Solid State Ionics.1999,119(1-4):269-273.
    [17]Junichi Nagai,Graham D.Mcmeeking.Modeling of electrochromic processes.Electrochimica Acta.1999,44(18):3177-3184.
    [18]Svensson J.S.E.M.,Granqvist C.G.Electrochromic coatings for "smart windows".Solar Energy Materials.1985,12(6):391-402.
    [19]Granqvist Claes-goeran.Electrochromic oxides:microstructures and optical properties.Proc.SPIE.1993,2017:84-94.
    [20]Baucke F.G.K.Electrochromic mirrors with variable reflectance.Solar Energy Materials.1987,16(1-3):67-77.
    [21]Deb S.K.Opportunities and challenges of electrochromic phenomena in transition metal oxides.Solar Energy Materials and Solar Cells.1992,25(3-4):327-338.
    [22]de Paoli M.-a,Zanelli A.,Mastragostino M.,et al.An electrochromic device combining polypyrrole and WO3 Ⅱ:solid-state device with polymeric electrolyte.Journal of Electroanalytical Chemistry.1997,435(1-2):217-224.
    [23]Rocco A.M.,de Paoli M.-a,Zanelli A.,et al.An electrochromic device combining polypyrrole and WO3—Ⅰ.Liquid electrolyte.Electrochimica Acta.1996,41(18):2805-2816.
    [24]吴广明,吴永刚,倪星元,等.WO_3和V_2O_5薄膜电致变色器件特性研究.同济大学学报(自然科学版).1998,26(02):211-216.
    [25]殷顺湖,徐键,洪樟连,等.灵巧窗电致变色复合薄膜材料、器件及应用.材料导报.1995,(06):70-75.
    [26]范志新.ITO薄膜载流子浓度的理论上限.现代显示.2000,(03):18-22.
    [27]Sbar N.,Badding M.,Budziak R.,et al.Progress toward durable,cost effective electrochromic window glazings.Solar Energy Materials and Solar Cells.1999,56(3-4):321-341.
    [28]张成林.电致变色玻璃窗.建材工业信息.2001,(02):17-18.
    [29]Gratzel M.Materials science:Ultrafast colour displays.Nature.2001,409:575-576.
    [30]孙宁,赵灵芝,张玉杰.电致变色薄膜研究进展.中国陶瓷.1998,34(05):34-37.
    [31]Decker F.,Pileggi R.,Passerini S.,et al.A Comparison of the Electrochromic Behavior and the Mechanical Properties of WO3 and NiOx Thin Film Electrodes.J.Electrochem.Soc.1991,138(11):3182-3186.
    [32]Kuzmin A.,Purans J.,Cazzanelli E.,et al.X-ray diffraction,extended x-ray absorption fine structure and Raman spectroscopy studies of WO3 powders and(1-x)WO3-y·xReO2 mixtures.J.Appl.Phys.1998,15:5515-5524.
    [33]Bamwenda G.R.,Arakawa H.The visible light induced photocatalytic activity of tungsten trioxide powders.Applied Catalysis A:General.2001,210(1-2):181-191.
    [34]Kleperis J.J.,Cikmach P.D.,Lusis A.R.,et al.Colour centers in amorphous tungsten trioxide thin films.Phys Stat Sol.1984,83:291-297.
    [35]林坚,林永钟.混合氧化物掺杂电致变色.光子学报.2001,30(03):364-368.
    [36]Ahn Kwang-soon,Nah Yoon-chae,Sung Yung-eun,et al.Surface morphological,microstructural,and electrochromic properties of short-range ordered and crystalline nickel oxide thin films.Applied Surface Science.2002,199(1-4):259-269.
    [37]周志扬,史月艳.NiO_xH_y薄膜电致变色性能的研究.太阳能学报.1998,(03):243-247.
    [38]Lee Se-hee,Cheong Hyeonsik M.,Park Nam-gyu,et al.Raman spectroscopic studies of Ni-W oxide thin films.Solid State Ionics.2001,140(1-2):135-139.
    [39]李筱琳,任豪,罗宇强.制备NiO电致变色薄膜的低电压反应离子镀工艺研究.真空.2004,41(02):21-24.
    [40]吴永刚,吴广明,倪星元,等.电致变色NiO_x薄膜及其研究现状.光电子技术.1998,18(03):203-210.
    [41]Jiang S.R.,Yan P.X.,Feng B.X.,et al.The response of a NiOx thin film to a step potential and its electrochromic mechanism.Materials Chemistry and Physics.2002,77(02):384-389.
    [42]Washizu E.,Yamamoto A.,Abe Y.,et al.Optical and electrochromic properties of RF reactively sputtered WO3 films.Solid State Ionics.2003,165(1-4):175-180.
    [43]Dimitrova Z.,Gogova D.On the structure,stress and optical properties of CVD tungsten oxide films.Materials Research Bulletin.2005,40(2):333-340.
    [44]叶辉,李晓艳.溶胶-凝胶法制备电致变色薄膜及器件的研究.光学学报.1999,19(04):532-539.
    [45]Bouessay I.,Rougier A.,Beaudoin B.,et al.Pulsed Laser-Deposited nickel oxide thin films as electrochromic anodic materials.Applied Surface Science.2002,186(1-4):490-495.
    [46]Chigane Masaya,Ishikawa Masami,Inoue Hiroshi,et al.Further XRD characterization of electrochromic nickel oxide thin films prepared by anodic deposition.Solar Energy Materials and Solar Cells.2000,64(1):65-72.
    [47]冯博学,谢亮,蔡兴民,等.电化学沉积非晶NiO_xH_y膜的电致变色特性及其机理.半导体学报.2001,22(02):193-197.
    [48]张旭苹,陈国平,吕忆农.工艺参数对氧化镍薄膜结晶结构的影响.电子器件.1995,18(03):184-190.
    [49]吴永刚,吴广明,倪星元,等.电子束蒸发氧化镍薄膜的电致变色性能.应用科学学报.1999,(02):221-226.
    [50]Cerckorosec R.,Bukovec P.The role of thermal analysis in optimization of the electrochromic effect of nickel oxide thin films,prepared by the sol-gel method:Part Ⅱ.Thermochimica Acta.2004,410(1-2):65-71.
    [51]周杰,傅相锴,孙美丹,等.PEO掺杂氧化镍薄膜的溶胶-凝胶法制备及电致变色性能研究.化学学报.2006,64(10):1004-1010.
    [52]王连超,孟凡利,孙宇峰,等.电致变色纳米氧化镍薄膜的溶胶-凝胶法制备与表征.无机材料学报.2004,19(06):1391-1396.
    [53]唐一科,徐艳,许静,等.三氧化钨薄膜材料制备的现状及研究趋势.重庆科技学院学报(自然科学版).2005,7(01):1-4.
    [54]杨邦朝.薄膜物理与技术.第一版.成都:电子科技大学出版社,1993.
    [55]薛增泉,吴全德,李洁,等.薄膜物理.第一版.北京:电子工业出版社,1991.
    [56]王忠春,胡行方.WO_3薄膜的动态电变色特性.无机材料学报.1998,13(06):932-936.
    [57]杨邦朝.薄膜物理与技术.第一版.成都:电子科技大学出版社,1993.
    [58]高濂,郑珊,张青红,et al.纳米氧化钛光催化材料及应用.北京:化学工业出版社,2002.
    [59]殷景华,王雅珍.功能材料概论.第一版.哈尔滨:哈尔滨工业大学出版社,1999.
    [60]田明波,刘德令.薄膜科学与技术手册.北京:机械工业出版社,1991.
    [61]牛仕超,余志明,代明江,等.中频磁控溅射沉积梯度过渡Cr/CrN/CrNC/CrC膜的附着性能.中国有色金属学报.2007,17(08):1307-1312.
    [62]廖国进,巴德纯,闻立时,等.中频反应磁控溅射沉积Al_2O_3薄膜中迟滞回线的研究.真空.2007,44(03):32-35.
    [63]佟洪波,巴德纯,闻立时.中频反应磁控溅射制备AlN薄膜的工艺研究.真空科学与技术学报. 2007,27(04):332-335.
    [64]王良.一种磁控溅射镀膜电源的设计方法.辽宁工学院学报.1997,17(01):49-52.
    [65]孙东明.圆柱形平面式磁控溅射靶的特点与设计原理.昆明理工大学学报.2000,25(02):54-57.
    [66]赵化侨.等离子体化学与工艺.第一版.合肥:中国科学技术大学出版社,1993.
    [67]贾嘉.溅射法制备纳米薄膜材料及进展.半导体技术.2004,29(07):70-73.
    [68]马胜歌,吴宇峰,耿漫.中频孪生靶非平衡磁控溅射制备Ti/TiN/Ti(N,C)黑色硬质膜.真空与低温.2006,12(01):15-18.
    [69]廖国进,巴德纯,闻立时,等.掺杂浓度对中频反应磁控溅射制备Al_2O_3∶Ce~(3+)薄膜发光性能的影响.功能材料与器件学报.2007,13(06):543-548.
    [70]李微,孙云,敖建平,等.中频对向靶磁控溅射制备超薄ZnO薄膜及其在太阳电池中的应用.人工晶体学报.2007,36(03):584-588.
    [71]巴德纯,廖国进,闻立时,等.中频反应磁控溅射制备Al_2O_3∶Ce~(3+)薄膜的蓝色发光特性.真空科学与技术学报.2006,26(05):421-424.
    [72]何国金,郭太良.中频反应磁控溅射制备氧化铝薄膜的工艺探索.漳州师范学院学报(自然科学版).2004,17(02):39-42.
    [73]黄银松,章俞之,宋力昕,等.多晶氧化钨薄膜的制备及其红外反射调制性能研究.无机材料学报.2002,17(06):1263-1268.
    [74]史月艳,陈士元,杨晓继,等.磁控溅射电致变色非晶态氧化钨薄膜.太阳能学报.1996,17(04):358-364.
    [75]张旭苹,陈国平,吕忆农.工艺参数对氧化镍薄膜结晶结构的影响.电子器件.1995,18(03):184-190.
    [76]陈永军,林永昌.电致变色中电介质膜参数的研究.北京理工大学学报.1995,15(04):348-352.
    [77]Huh J.S.,Hwang H.R.,Paik J.H.,et al.The Effect of a Migration Barrier Between Tungsten Oxide and Indium Tin Oxide Thin Films in Electrochromic Devices.Thin Solid Films.2001,385:255-259.
    [78]Ng K.T.,Hercules D.M.Studies of nickel-tungsten-alumina catalysts by X -ray photoelection spectroscopy.J Phys Chem.1976,80(19):2094-2102.
    [79]王俊文,孙彦平,庄壮,等.HF-PCVD法WO_x纳米微晶的制备及光催化活性.稀有金属材料与工程.2008,37(04):705-708.
    [80]林志东,刘黎明,张万荣.金刚石表面Ar离子溅射效应的电子能谱分析.武汉化工学院学报.2004,26(02):46-49.
    [81]赵志娟,刘芬,邱丽美,等.纳米粒子尺寸效应引起的内层电子结合能位移.物理化学学报.2008,24(X):1-4.
    [82]Dzhurinskii B.F.,Gati D.,Sergushin N.P.,et al.Simple and coordination compounds.An X-ray photoelectron spectroscopic study of certain oxides.Russian Journal of Inorganic Chemistry.1975,20:2307-2314.
    [83]邹丽霞,丁慧玲,董丽君,等.WO_3·H_2O纳米线阵列的制备及其光催化活性.复合材料学报.2008,25(02):123-128.
    [84]张久兴,张国珍,张利平,等.氧化钨/碳SPS原位合成WC硬质合金的XPS研究.稀有金属材料 与工程.2006,35(06):937-940.
    [85]黄佳木,施萍萍.磁控溅射WO_x电致变色薄膜的结构.重庆大学学报(自然科学版).2004,27(05):81-84.
    [86]T Hirose.Structure Phase Transitions and Semiconductor-Metal Transition in WO3.Phys.Soc.Jpn.1980,49(2):562-567.
    [87]段潜,刘大军,何兴权.WO_3薄膜的结构和电致变色性质的热处理效应.长春光学精密机械学院学报.1999,22(04):5-8.
    [88]代富平,吕淑媛,冯博学,等.非晶态WO_3薄膜电致变色特性的研究.物理学报.2003,52(04):1003-1008.
    [89]吴正华,丘思畴,黄汉尧,等.热处理WO_3电变色膜稳定性研究.光电子技术.1996,16(02):125-130.
    [90]Donnadieu A.,Davazoglou D.,Abdellaoui A.,et al.Structure,optical and electro-optical properties of polycrystalline WO3 and MoO3 thin films prepared by chemical vapour deposition.Thin Solid Films.1988,164:333-338.
    [91]李建军,陈国平,刘云峰,等.掺杂氧化钨薄膜的电致变色特性.真空.2001,(02):33-35.
    [92]Southward B.W.L.,Vaughan J.S.,Connor C.T.O.,et al.Infrared and thermal analysis studies of heteropoly acids.Journal of catalysis.1995,153:293-303.
    [93]Patil P.S.,Mujawar S.H.,Inamdar A.I.,et al.Electrochromic properties of spray deposited TiO2-doped WO3 thin films.Applied Surface Science.2005,250(1-4):117-123.
    [94]范志新,潘良玉,何良明.三氧化钨电致变色薄膜最佳掺杂含量的理论计算.光学学报.2002,(11):1303-1306..
    [95]Ho S.F.,Contarini S.,Rabalais J.W.,et al.Ion-beam-induced chemical changes in the oxyanions (Moyn-) and oxides(Mox) where M=chromium,molybdenum,tungsten,vanadium,niobium and tantalum.J.Phys.Chem.1987,91(18):4779-4788.
    [96]赵娟,刘士军,李洁,等.钇掺杂WO_3的制备及光催化分解水析氧活性.中国有色金属学报.2008,18(02):330-335.
    [97]陆家和,陈长彦,曹立礼.表面分析技术.北京:北京电子工业出版社,1987.
    [98]黄佳木,施萍萍,吕佳.WO_x:Mo薄膜的结构及电致变色性能研究.硅酸盐学报.2004,32(05):580-584.
    [99]Makimura Yoshinari,Rougier Aline,Tarascon Jean-marie,et al.Cobalt and tantalum additions for enhanced electrochromic performances of nickel-based oxide thin films grown by pulsed laser deposition.Applied Surface Science.2006,252(13):4593-4598.
    [100]王爱囡,胡继刚.用神经网络算法预测溅射镀膜时的溅射产额.合肥工业大学学报(自然科学版).2005,28(07):812-815.
    [101]赵方红,庄大明,张弓,等.基体温度对中频磁控溅射制备的氧化锌镓薄膜性能的影响.真空科学与技术学报.2006,26(05):404-407.
    [102]Holy Vaclav,Pietsch Ullrich,Baumbach Tilo,et al.High-Resolution X-Ray Scattering from Thin Films and Multilayers.Springer Berlin/Heidelberg,1999.
    [103]Avendano E.,Azens A.,Niklasson G.A.,et al.Electrochromism in nickel oxide films containing Mg, Al,Si,V,Zr,Nb,Ag,or Ta.Solar Energy Materials & Solar Cells.2004,84(1-4):337-350.
    [104]Klug H.P.,Alexander L.E.X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials.2 ed.New York:John Wiley & Sons,1974.
    [105]Xuping Zhang,Guoping Chen.The microstructure and electrochromic properties of nickel oxide films deposited with different substrate temperatures.Thin Solid Films.1997,298(1-2):53-56.
    [106]杨百勤,张玉杰,袁跃华.氧化镍薄膜电致变色特性及机理研究.化学世界.2005,(07):399-401.
    [107]唐伟忠.薄膜材料制备原理、技术及应用第2版.北京:冶金工业出版社,2003.
    [108]J Bard A.,R Faulkner L.Electrochemical Methods Fundamentals and Applications.New York:John Wiley & Sons,Inc,1980.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700