半导体功率放大激光器耦合效率的研究
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摘要
本论文通过对波长为1.3μm、InGaAsP/InP材料的半导体功率放大激光器的特殊结构的分析和研究,采取在半导体功率放大激光器相应的腔面镀膜的方法,以获得高的增益、降低阈值电流、提高激光器的光耦合效率以及光输出功率。为了提高半导体功率放大激光器中激光发生器与激光放大器的光耦合效率,我们通过在半导体功率放大激光器的激光发生器的前腔面镀制高反射膜方法,提高激光发生器端面的光输出,进而来提高它的光耦合效率,我们采用ZrO_2和MgF_2作为多层介质高反射膜,通过理论计算,半导体功率放大激光器后腔面反射率理论上可达到92.5%。最后通过实验分析加以验证,半导体功率放大激光器在镀制反射膜之后,它的整体工作功率提高了36.3-50%。
同时,为了进一步提高半导体功率放大激光器中的激光发生器与激光放大器的耦合效率,我们采取在半导体功率放大激光器激光放大器的前腔面镀制SiO增透膜的方法来提高相应腔面的透射率,进一步提高它的光耦合效率。并采用软件进行模拟计算分析,整体透射率得到了明显改善。提高了半导体功率放大激光器的光耦合效率以及输出的光功率。
This paper introduces the stracture and fundamental principle of 1.3μrn InGaAsP/InP laser with semiconductor power amplification. In order to obtain the high gain of laser with semiconductor power amplification, reduces the threshold value electric current of laser with semiconductor power amplification, to enhances the quantum efficiency and the laser output, before the design the end surface plates the anti- reflection film, the after end plates the system high reflection membrane. Because the film with low absorption, low scatter and high threshold value, ZrO_2 and MgF_2 are selected as the materials of the film,causes the back cavity back surface index of reflectivity of laser with semiconductor power amplification is 92.5% In theory, and the power efficiency of laser with semiconductor power amplification enhances by between 36.3% to 50%.
The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of laser with semiconductor power amplification, and with a wavelength. The transmittanse of cavity faces have been increased appearently.The coupling efficiency of laser with semiconductor power amplification, output power of laser with semiconductor power amplification and operating lifetime have been improved.
同时,为了进一步提高半导体功率放大激光器中的激光发生器与激光放大器的耦合效率,我们采取在半导体功率放大激光器激光放大器的前腔面镀制SiO增透膜的方法来提高相应腔面的透射率,进一步提高它的光耦合效率。并采用软件进行模拟计算分析,整体透射率得到了明显改善。提高了半导体功率放大激光器的光耦合效率以及输出的光功率。
This paper introduces the stracture and fundamental principle of 1.3μrn InGaAsP/InP laser with semiconductor power amplification. In order to obtain the high gain of laser with semiconductor power amplification, reduces the threshold value electric current of laser with semiconductor power amplification, to enhances the quantum efficiency and the laser output, before the design the end surface plates the anti- reflection film, the after end plates the system high reflection membrane. Because the film with low absorption, low scatter and high threshold value, ZrO_2 and MgF_2 are selected as the materials of the film,causes the back cavity back surface index of reflectivity of laser with semiconductor power amplification is 92.5% In theory, and the power efficiency of laser with semiconductor power amplification enhances by between 36.3% to 50%.
The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of laser with semiconductor power amplification, and with a wavelength. The transmittanse of cavity faces have been increased appearently.The coupling efficiency of laser with semiconductor power amplification, output power of laser with semiconductor power amplification and operating lifetime have been improved.
引文
[1]石家纬.半导体光电子学.长春:吉林大学出版社,1994:126-134.
[2]江剑平.半导体激光器.北京:电子工业出版社,2000,8(2):5.
[3]李学千.半导体激光器的最新进展及其应用.长春光学精密机械学院学报,1997,20(4):56-63.
[4]何兴仁.用作掺饵光纤放大器光泵浦的激光二极管.半导体光电,1992,13(3):195-201.
[5]李玲等.光纤通信基础.国防工业出版社,2000:10-15.
[6]郑联喜,肖智博,韩勤等,MOCVD生长大功率单量子阱激光器.半导体学报,1996,17(2):68.
[7]周炳琨,高以智,陈倜嵘等.激光原理.北京:国防工业出版社,2004:241-245.
[8]梁祝.光学原理教程.长春:长春理工大学,2003:34-37.
[9]吴根柱,齐鸣,叙安怀.半导体激光器后腔面高反射涂层的研究.功能材料与器件学报,2003,9(3):343-346.
[10]K H Huang,J G Yu,C P Kuo,et al.Twofold efficiency improvement in high performance AIGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer.Appl Phys Lett,1992,61(9):1045-1047.
[11]杨云龙等.高功率半导体激光器的高性能优化技术.激光与光电子学进展,2004:56-67.
[12]陈钰清,王静环.激光原理.浙江大学出版社,2000:26-30.
[13]W.H.Cheng,C.S.Wang et al.,Highly Efficient Power Cou2p ling Between GahlAs Lasers and Tapered2Hem ispherical2End Multimode Fibers,Appl.Opt.,1982,21(19):3409-3410.
[14]曲宙,刘洋,刘博.大功率半导体激光器的军事应用.光机电信息,2006:52-55.
[15]黄德修,刘雪峰.半导体激光器及其应用.国防工业出版社,1999:345-349.
[16]唐婷婷,王锐,刘刚明,廖柯.808nm激光器端面镀膜技术.半导体光电,2006,4(2):167-169.
[17]方高瞻,肖建伟等.157W准连续AlGaA(o|¨)GaAs激光二极管线列阵.半导体学报,2000,21(1):102.
[18]Design and performance of 980 nm pump laser modules exhibiting greater than 400mW kink-free power D.Crawford,M.McElhinney,R.McGowan,P.Thiagarajan,J.Cahill,S.Nelson,S.Oison,P.Pedersen,and C.Lennon SCIENCE@DIRECT ThN3.
[19]姚建铨.激光二极管泵浦的固体激光器的发展现状及展望.信息光电子前沿发展与产业开发对策研讨会,1997:42-60.
[20]Regis S.Fan and R.Brian Hooker,Tapered Polymer Single2Mode Waveguides for Mode Transformation,IEEE.Journal of Lightwave Technology,1999,17(3):466-474.
[21]杨琏,杨晓妍,朱明方.半导体功率放大激光器耦合效率的研究.激光与红外,2006,10(10):36.
[22]Peter Yang Wang.Beam2shaping optics deliver high2power beam.Laser Focus World,2001,37(12):115-118.
[23]马养武.激光器件.浙江:浙江大学出版社,2000:198-203.
[24]G.Erbert,F.Bugge,A.Knauer,J.Maege,A.Oster,J.Sebastian,R.Staske,A.Thies,H.Wenzel,M.Weyers,and G.Tr(a|¨)nkle,,,Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 and 840 nm",Proc.SPIE,vol.3628,p.19-28(1999).
[25]冯克成,刘景生.红外光学系统.长春:长春理工大学,2003:179.
[26]刘景生.红外物理.长春:长春理工大学,2003:56.
[27]林永昌,卢维强.光学薄膜原理.北京:国防工业出版社,1990:234.
[28]郑伟涛.薄膜材料与薄膜技术.北京:化学工业出版社,2004:99-109
[29]周炳昆,高以智,陈倜嵘等.激光原理.北京:国防工业出版社,1994:63-74.
[30]张贵锋.新型红外增透膜与保护膜红外技术.2002,11(5):17-23.
[31]伊树百.薄膜光学—理论与实践.北京:科学出版社,1987:22-38.
[32]Jyh-Feng Lin,Meng-Chyi Wu,Ming-Jiunn Jou,et al.Growth of a GaP windowlayer on AIGaInP light-emitting diodes using misorientedsubstrates.Crystal Growth,1994,I42:1520
[33]F A Kish,F M Steranka,D C Defevere,et al.Very high-efficient semiconductor wafer-bonded transparent-substrate(AlxGa,_X)o slno.sP/GaP light-emitting diodes.Appl Phys Lett.1994, 64(21):2839-2841.
[34]Bodemann A,Kaiser N,Kozlowski,et al.Comparison between 355nm and 1064nm damage.1996,58(4):356-367.
[35]左演声,陈文哲,梁伟.材料现代分析方法.北京:北京工业大学出版社,2000:91-113.
[36]谭满清,茅冬.ECR Plasma CVD法沉积800nm大功率半导体激光器光学膜工艺研究.半导体学报,2002,20(7):589-592.
[37]Magari K,Yoshimofo N,Ito T et al.High uniformity in semitone for optical amplifier gates integrated with spot size converters.Technical Digest of Third Optoelectronics and Communications Conference Paper,1998;14B222:124.
[38]M.Saarinen,N.Xiang,V.Vilokkinen,P.Melanen,S.Orsila,P.Uusimaa,P.Savolainen,M.Toivonen,M.Pessa,Red vertical -cavity surface-emitting lasers grown by solid-source molecular beamed itaxy,Journal Crystal Growth 227-228,2001.324-328.
[39]杨晓妍.半导体激光器腔面全介质涂层的研究.光学精密工程,1995,3(3):38-41.
[40]刘明大,石家纬.SiO高效减反射的蒸镀和监控.半导体光电,1993,14(2):172-174.
[41]刘梦夏,强西林.光学薄膜膜系设计方法及发展趋势.西安工业学院学报,2000,9(5):194-199.
[42]刘雪峰,黄德修等.一种半导体激光放大器输出耦合方式的研究.半导体学报,1993,14(7):423.
[43]王学华,薛亦渝.薄膜制备新技术及其应用研究.真空电子技术,2003,5(2):65-70.
[44]杨晓妍,刘杰.GaAs半导体激光器腔面高反射涂层的研究.光学精密工程.1997,6(3):59.
[45]Laser Damage of Silicon Oxynitride Mirrors;Comparison of Theory and Experiment,Geey Gurtman,Russ Wilson and Mel Rice Mxwell TECHNOLOGIES inc,8888 Balboa Avenue,San Diego,California CA 92123-1506.
[46]杨晓妍,杨莲,王玉霞.半导体激光器腔面高反射涂层的研究.长春光学精密机械学院学报.1995,9(18):67-69.
[47]杨晓妍.GaAlAs激光器腔面减反射涂层.半导体光电,1995,16(2):174-176.
[48]王剑格.半导体光电器件中的减反射膜.半导体光电,1993,14(2):175-177.
[48]唐婷婷,王锐,刘刚明,廖柯.808nm激光器端面镀膜技术.半导体光电,2006,4(27):167-169.
[49]常进,黄德修.半导体光放大器端面镀膜的实验与研究.光通信研究,2004:65-67.
[2]江剑平.半导体激光器.北京:电子工业出版社,2000,8(2):5.
[3]李学千.半导体激光器的最新进展及其应用.长春光学精密机械学院学报,1997,20(4):56-63.
[4]何兴仁.用作掺饵光纤放大器光泵浦的激光二极管.半导体光电,1992,13(3):195-201.
[5]李玲等.光纤通信基础.国防工业出版社,2000:10-15.
[6]郑联喜,肖智博,韩勤等,MOCVD生长大功率单量子阱激光器.半导体学报,1996,17(2):68.
[7]周炳琨,高以智,陈倜嵘等.激光原理.北京:国防工业出版社,2004:241-245.
[8]梁祝.光学原理教程.长春:长春理工大学,2003:34-37.
[9]吴根柱,齐鸣,叙安怀.半导体激光器后腔面高反射涂层的研究.功能材料与器件学报,2003,9(3):343-346.
[10]K H Huang,J G Yu,C P Kuo,et al.Twofold efficiency improvement in high performance AIGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer.Appl Phys Lett,1992,61(9):1045-1047.
[11]杨云龙等.高功率半导体激光器的高性能优化技术.激光与光电子学进展,2004:56-67.
[12]陈钰清,王静环.激光原理.浙江大学出版社,2000:26-30.
[13]W.H.Cheng,C.S.Wang et al.,Highly Efficient Power Cou2p ling Between GahlAs Lasers and Tapered2Hem ispherical2End Multimode Fibers,Appl.Opt.,1982,21(19):3409-3410.
[14]曲宙,刘洋,刘博.大功率半导体激光器的军事应用.光机电信息,2006:52-55.
[15]黄德修,刘雪峰.半导体激光器及其应用.国防工业出版社,1999:345-349.
[16]唐婷婷,王锐,刘刚明,廖柯.808nm激光器端面镀膜技术.半导体光电,2006,4(2):167-169.
[17]方高瞻,肖建伟等.157W准连续AlGaA(o|¨)GaAs激光二极管线列阵.半导体学报,2000,21(1):102.
[18]Design and performance of 980 nm pump laser modules exhibiting greater than 400mW kink-free power D.Crawford,M.McElhinney,R.McGowan,P.Thiagarajan,J.Cahill,S.Nelson,S.Oison,P.Pedersen,and C.Lennon SCIENCE@DIRECT ThN3.
[19]姚建铨.激光二极管泵浦的固体激光器的发展现状及展望.信息光电子前沿发展与产业开发对策研讨会,1997:42-60.
[20]Regis S.Fan and R.Brian Hooker,Tapered Polymer Single2Mode Waveguides for Mode Transformation,IEEE.Journal of Lightwave Technology,1999,17(3):466-474.
[21]杨琏,杨晓妍,朱明方.半导体功率放大激光器耦合效率的研究.激光与红外,2006,10(10):36.
[22]Peter Yang Wang.Beam2shaping optics deliver high2power beam.Laser Focus World,2001,37(12):115-118.
[23]马养武.激光器件.浙江:浙江大学出版社,2000:198-203.
[24]G.Erbert,F.Bugge,A.Knauer,J.Maege,A.Oster,J.Sebastian,R.Staske,A.Thies,H.Wenzel,M.Weyers,and G.Tr(a|¨)nkle,,,Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 and 840 nm",Proc.SPIE,vol.3628,p.19-28(1999).
[25]冯克成,刘景生.红外光学系统.长春:长春理工大学,2003:179.
[26]刘景生.红外物理.长春:长春理工大学,2003:56.
[27]林永昌,卢维强.光学薄膜原理.北京:国防工业出版社,1990:234.
[28]郑伟涛.薄膜材料与薄膜技术.北京:化学工业出版社,2004:99-109
[29]周炳昆,高以智,陈倜嵘等.激光原理.北京:国防工业出版社,1994:63-74.
[30]张贵锋.新型红外增透膜与保护膜红外技术.2002,11(5):17-23.
[31]伊树百.薄膜光学—理论与实践.北京:科学出版社,1987:22-38.
[32]Jyh-Feng Lin,Meng-Chyi Wu,Ming-Jiunn Jou,et al.Growth of a GaP windowlayer on AIGaInP light-emitting diodes using misorientedsubstrates.Crystal Growth,1994,I42:1520
[33]F A Kish,F M Steranka,D C Defevere,et al.Very high-efficient semiconductor wafer-bonded transparent-substrate(AlxGa,_X)o slno.sP/GaP light-emitting diodes.Appl Phys Lett.1994, 64(21):2839-2841.
[34]Bodemann A,Kaiser N,Kozlowski,et al.Comparison between 355nm and 1064nm damage.1996,58(4):356-367.
[35]左演声,陈文哲,梁伟.材料现代分析方法.北京:北京工业大学出版社,2000:91-113.
[36]谭满清,茅冬.ECR Plasma CVD法沉积800nm大功率半导体激光器光学膜工艺研究.半导体学报,2002,20(7):589-592.
[37]Magari K,Yoshimofo N,Ito T et al.High uniformity in semitone for optical amplifier gates integrated with spot size converters.Technical Digest of Third Optoelectronics and Communications Conference Paper,1998;14B222:124.
[38]M.Saarinen,N.Xiang,V.Vilokkinen,P.Melanen,S.Orsila,P.Uusimaa,P.Savolainen,M.Toivonen,M.Pessa,Red vertical -cavity surface-emitting lasers grown by solid-source molecular beamed itaxy,Journal Crystal Growth 227-228,2001.324-328.
[39]杨晓妍.半导体激光器腔面全介质涂层的研究.光学精密工程,1995,3(3):38-41.
[40]刘明大,石家纬.SiO高效减反射的蒸镀和监控.半导体光电,1993,14(2):172-174.
[41]刘梦夏,强西林.光学薄膜膜系设计方法及发展趋势.西安工业学院学报,2000,9(5):194-199.
[42]刘雪峰,黄德修等.一种半导体激光放大器输出耦合方式的研究.半导体学报,1993,14(7):423.
[43]王学华,薛亦渝.薄膜制备新技术及其应用研究.真空电子技术,2003,5(2):65-70.
[44]杨晓妍,刘杰.GaAs半导体激光器腔面高反射涂层的研究.光学精密工程.1997,6(3):59.
[45]Laser Damage of Silicon Oxynitride Mirrors;Comparison of Theory and Experiment,Geey Gurtman,Russ Wilson and Mel Rice Mxwell TECHNOLOGIES inc,8888 Balboa Avenue,San Diego,California CA 92123-1506.
[46]杨晓妍,杨莲,王玉霞.半导体激光器腔面高反射涂层的研究.长春光学精密机械学院学报.1995,9(18):67-69.
[47]杨晓妍.GaAlAs激光器腔面减反射涂层.半导体光电,1995,16(2):174-176.
[48]王剑格.半导体光电器件中的减反射膜.半导体光电,1993,14(2):175-177.
[48]唐婷婷,王锐,刘刚明,廖柯.808nm激光器端面镀膜技术.半导体光电,2006,4(27):167-169.
[49]常进,黄德修.半导体光放大器端面镀膜的实验与研究.光通信研究,2004:65-67.