TbFeCo磁光薄膜的制备和性能研究
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摘要
本文采用磁控溅射方法制备了TbFeCo/Si和Ag/TbFeCo/Si系列薄膜并对溅射工艺进行了详细研究,分析了TbFeCo薄膜的生长机理,还对其光学性质、磁性质和磁光性质进行了研究。同时还用反应溅射方法制备了用作保护膜的AIN、SiN薄膜,并对其光学性质进行了研究。
首先采用X射线能量色散谱仪(EDS)和扫描电子显微镜(SEM)分析了溅射气压对TbFeCo薄膜结构和成分的影响,结果表明,溅射时Ar气压强对TbFeCo薄膜的成分有明显的影响,当溅射气压为2.0 Pa时,薄膜的成分与靶材成分最为接近。用X射线衍射仪(XRD)和原子力显微镜(AFM)分别对TbFeCo/Si和Ag/TbFeCo/Si薄膜的结构和表面形貌进行了分析和表征。XRD和SEM测试的结果证实磁控溅射制备的TbFeCo/Si和Ag/TbFeCo/Si均是非晶薄膜。
其次采用全自动椭圆偏振光谱仪测量了TbFeCo/Si和Ag/TbFeCo/Si薄膜在光子能量为1.5-4.5 eV范围内的椭偏光谱。分析了制备工艺(溅射气压、溅射功率和Ar气流量)和Ag膜厚度对TbFeCo/Si和Ag/TbFeCo/Si薄膜光学性质的影响,结果表明,制备过程的工艺参数如工作气压、溅射功率和Ar气流量对薄膜的光学性质有明显的影响:介电函数实部ε_1随溅射气压的增加而增加,随溅射功率的增加先减小再增加,而随Ar气流量变化的关系则较为复杂。介电函数虚部ε_2随溅射气压的增大而减小,随溅射功率的增加先增大再减小,而与Ar气流量的关系则较为复杂。本文中还对Ag/Si、Ag/TbFeCo/Si、TbFeCo/Si薄膜样品的光谱进行了比较分析,用Drude模型和量子跃迁理论对实验结果进行了分析。分析发现,实验结果和Drude模型是吻合的。此外,对AlN和SiN薄膜的光学性质测量的结果表明衬底温度对AlN的生成是较重要的,而反应溅射中活性气体与工作气体的比例对产物生成的影响相对较小。
最后对制备的Ag/TbFeCo/Si、TbFeCo/Si和Ag/TbFeCo/K9、TbFeCo/K9系列磁光薄膜的磁光性质和磁性质分别进行了测量和分析。结果表明,Ag保护膜厚度对TbFeCo磁光薄膜的磁光性质和磁性质都会产生影响显著的影响。当Ag膜较薄时(膜厚小于51nm),在短波范围观察到显著的Kerr增强效应;而当Ag膜较厚时(膜厚大于102 nm),就观察不到这种短波Kerr增强效应了。测量结果还显示本研究中制备的TbFeCo薄膜其面内磁化曲线或Kerr回线具有良好的矩形比,而垂直于薄膜表面的磁化曲线则退化为一条直线,表明本研究中制备的TbFeCo薄膜是面内磁化,而非垂直磁化。
In this thesis, the technology of fabrication of TbFeCo/Si, Ag/TbFeCo/Si films by magnetron sputtering system were thoroughly investigated. The growth mechanism, the optical properties, the magnetic properties, and the magneto-optical properties of TbFeCo were analyzed. In addition, the AlN、SiN films were fabricated by reactive sputtering deposition and their optical properties were studied.
First, the influences of sputtering on microstructure and components of TbFeCo film were analyzed using X-ray energy dispersive spectrum (EDS) and scanning electron microscopy (SEM). The results showed that supterring pressures had significant influence on components of TbFeCo film prepared by sputtering deposition and the composition of the film was most closed to that of target when sputtering pressure was 2.0 Pa. The structure and morphology of the TbFeCo/Si and Ag/TbFeCo/Si films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The results of XRD and SEM confirmed that TbFeCo/Si and Ag/TbFeCo/Si films were amorphous films.
Second, the optical properties of the TbFeCo/Si and Ag/TbFeCo/Si films were investigated in the photon energy range of 1.5- 4.5 eV using Spectroscopic Ellipsometry, and the impacts of sputtering parameters (sputtering pressure, sputtering power and Ar flux) and the thickness of the Ag films on the optical properties of the films were analyzed. The results showed that the real part of the dielectric functionε_1 increased significantly with the incresing of sputtering pressures, but it was decreased firstly then incresed with the increasing of sputtering power. And the relation betweenε_1 and Ar flux was complex. However, the imaginary part of the dielectric functionε_2 decreased with the increasing of sputtering pressure and it incresed firstly then decreased with the increasing of sputtering power. Similarly withε_1 , the relations betweenε_2 and Ar flux was complex. The optical properties of Ag/Si, Ag/TbFeCo/Si, TbFeCo/Si films were analyzed, and the Drude Model were used to analze the results, both of which were consistent with each other. The optical properties of A1N and SiN were also investigated, the results showed that the substrate temperature of A1N is very important to the film quality, while the gas proportions of Ar and reactive gas nitrogen in sputtering process have little impact on it.
Finally, the magnetic properties and the magnetooptical properties of the Ag/TbFeCo/Si, TbFeCo/Si and Ag/TbFeCo/K9, TbFeCo/K9 films were analyzed. The results showed that Ag films have signiciant impact on the megtronic property, and the magnetoptical property of TbFeCo. When the thickness of the Ag film was comparatively thin, the remarkable enhancement of Kerr effect was observed at short wavelength. After the thickness of Ag film exceeded 50 nm, the enhancement of Kerr effect could not be observed. In addition to this, the results of magnetic and magnetooptic measurements showed that the retangularity ratio of magnetic and Kerr hysteresises loop for the TbFeCo films in this work was close to 1 when magnetic field was in the face, while it was degenerated to a line when the magnetic field was out of the face. It indicated that the magnetization of the TbFeCo films was in the face but perpendicular magnetization in this work.
首先采用X射线能量色散谱仪(EDS)和扫描电子显微镜(SEM)分析了溅射气压对TbFeCo薄膜结构和成分的影响,结果表明,溅射时Ar气压强对TbFeCo薄膜的成分有明显的影响,当溅射气压为2.0 Pa时,薄膜的成分与靶材成分最为接近。用X射线衍射仪(XRD)和原子力显微镜(AFM)分别对TbFeCo/Si和Ag/TbFeCo/Si薄膜的结构和表面形貌进行了分析和表征。XRD和SEM测试的结果证实磁控溅射制备的TbFeCo/Si和Ag/TbFeCo/Si均是非晶薄膜。
其次采用全自动椭圆偏振光谱仪测量了TbFeCo/Si和Ag/TbFeCo/Si薄膜在光子能量为1.5-4.5 eV范围内的椭偏光谱。分析了制备工艺(溅射气压、溅射功率和Ar气流量)和Ag膜厚度对TbFeCo/Si和Ag/TbFeCo/Si薄膜光学性质的影响,结果表明,制备过程的工艺参数如工作气压、溅射功率和Ar气流量对薄膜的光学性质有明显的影响:介电函数实部ε_1随溅射气压的增加而增加,随溅射功率的增加先减小再增加,而随Ar气流量变化的关系则较为复杂。介电函数虚部ε_2随溅射气压的增大而减小,随溅射功率的增加先增大再减小,而与Ar气流量的关系则较为复杂。本文中还对Ag/Si、Ag/TbFeCo/Si、TbFeCo/Si薄膜样品的光谱进行了比较分析,用Drude模型和量子跃迁理论对实验结果进行了分析。分析发现,实验结果和Drude模型是吻合的。此外,对AlN和SiN薄膜的光学性质测量的结果表明衬底温度对AlN的生成是较重要的,而反应溅射中活性气体与工作气体的比例对产物生成的影响相对较小。
最后对制备的Ag/TbFeCo/Si、TbFeCo/Si和Ag/TbFeCo/K9、TbFeCo/K9系列磁光薄膜的磁光性质和磁性质分别进行了测量和分析。结果表明,Ag保护膜厚度对TbFeCo磁光薄膜的磁光性质和磁性质都会产生影响显著的影响。当Ag膜较薄时(膜厚小于51nm),在短波范围观察到显著的Kerr增强效应;而当Ag膜较厚时(膜厚大于102 nm),就观察不到这种短波Kerr增强效应了。测量结果还显示本研究中制备的TbFeCo薄膜其面内磁化曲线或Kerr回线具有良好的矩形比,而垂直于薄膜表面的磁化曲线则退化为一条直线,表明本研究中制备的TbFeCo薄膜是面内磁化,而非垂直磁化。
In this thesis, the technology of fabrication of TbFeCo/Si, Ag/TbFeCo/Si films by magnetron sputtering system were thoroughly investigated. The growth mechanism, the optical properties, the magnetic properties, and the magneto-optical properties of TbFeCo were analyzed. In addition, the AlN、SiN films were fabricated by reactive sputtering deposition and their optical properties were studied.
First, the influences of sputtering on microstructure and components of TbFeCo film were analyzed using X-ray energy dispersive spectrum (EDS) and scanning electron microscopy (SEM). The results showed that supterring pressures had significant influence on components of TbFeCo film prepared by sputtering deposition and the composition of the film was most closed to that of target when sputtering pressure was 2.0 Pa. The structure and morphology of the TbFeCo/Si and Ag/TbFeCo/Si films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The results of XRD and SEM confirmed that TbFeCo/Si and Ag/TbFeCo/Si films were amorphous films.
Second, the optical properties of the TbFeCo/Si and Ag/TbFeCo/Si films were investigated in the photon energy range of 1.5- 4.5 eV using Spectroscopic Ellipsometry, and the impacts of sputtering parameters (sputtering pressure, sputtering power and Ar flux) and the thickness of the Ag films on the optical properties of the films were analyzed. The results showed that the real part of the dielectric functionε_1 increased significantly with the incresing of sputtering pressures, but it was decreased firstly then incresed with the increasing of sputtering power. And the relation betweenε_1 and Ar flux was complex. However, the imaginary part of the dielectric functionε_2 decreased with the increasing of sputtering pressure and it incresed firstly then decreased with the increasing of sputtering power. Similarly withε_1 , the relations betweenε_2 and Ar flux was complex. The optical properties of Ag/Si, Ag/TbFeCo/Si, TbFeCo/Si films were analyzed, and the Drude Model were used to analze the results, both of which were consistent with each other. The optical properties of A1N and SiN were also investigated, the results showed that the substrate temperature of A1N is very important to the film quality, while the gas proportions of Ar and reactive gas nitrogen in sputtering process have little impact on it.
Finally, the magnetic properties and the magnetooptical properties of the Ag/TbFeCo/Si, TbFeCo/Si and Ag/TbFeCo/K9, TbFeCo/K9 films were analyzed. The results showed that Ag films have signiciant impact on the megtronic property, and the magnetoptical property of TbFeCo. When the thickness of the Ag film was comparatively thin, the remarkable enhancement of Kerr effect was observed at short wavelength. After the thickness of Ag film exceeded 50 nm, the enhancement of Kerr effect could not be observed. In addition to this, the results of magnetic and magnetooptic measurements showed that the retangularity ratio of magnetic and Kerr hysteresises loop for the TbFeCo films in this work was close to 1 when magnetic field was in the face, while it was degenerated to a line when the magnetic field was out of the face. It indicated that the magnetization of the TbFeCo films was in the face but perpendicular magnetization in this work.
引文
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[2]王忠良,A1N薄膜声表面波材料特性及其集成工艺的研究,贵州大学硕士毕业论文,2005.
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