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应用于监控安防领域的CMOS图像传感器关键技术研究
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摘要
进入新世纪以来,我国的综合国力和人民的生活水平不断提高。国家的国有资产和人民群众的个人财产和安全,都需要得到保护。整体社会的监督管理网络,也需要不断地完善。正因为如此,安防监控系统的应用越来越广泛,几乎遍布城市的每个角落。这些系统设备,充分而有效地保障了整个社会生活的顺利进行。随着微电子学的发展,图像传感器芯片在监控安防系统中的作用越来越重要,图像传感器相当于监控设备的“心脏”,它的性能好坏直接决定着监控设备能否发挥其应有的作用。因此,本文针对监控安防系统的应用,分析了监控CMOS图像传感器需要解决的关键技术问题,并提出了相应的解决方案。
     首先,针对监控领域对于低噪声的要求,分析了CMOS图像传感器的影响性能的主要几种噪声来源,提出了消除主要噪声的理论方法和电路结构实现。其次,针对监控领域对于大动态范围的要求,介绍了动态范围对于CMOS图像传感器的重要性,分析了造成CMOS图像传感器动态范围偏低的主要原因,并提出了提高动态范围指标的多种方法。再次,针对监控领域对于高灵敏度的要求,介绍了提高CMOS图像传感器像素灵敏度的几种方法。最后,通过实际的芯片产品测试结果,证明了本文提出的方法可以有效地提高CMOS图像传感器的灵敏度,降低噪声和扩展动态范围,使得监控领域应用最为看重的这三个性能指标得到了根本性的改善。
     本文在分析和提高监控CMOS图像传感器最为看重的噪声,动态范围和灵敏度三个重要指标基础上,提出了主要的几个创新方面:
     第一,提出了一种新颖的具有低噪声和高电源抑制比(PSRR)的电路结构,在模拟域大幅降低了CMOS图像传感器的图像噪声,提高了图像质量;并且依据暗电流噪声的相关性,提出了一种应用暗电流比例系数矩阵来消除暗电流噪声的方法,即节省了硬件资源,又提高了暗场下的图像质量。
     第二,根据多次曝光提高动态范围的理论,提出了一种新颖的组合穿插式多次曝光技术,在有效提高动态范围的同时,又保证了帧频不降低,硬件资源不过多消耗。
     第三,针对监控系统应用场合的不同,提出了一种新型的可变浮动节点电容值的灵敏度增强技术,实现了一颗芯片在多种监控环境下应用的可行性。
Since the beginning of the new century, the country's comprehensive nationalstrength and people's living standards are improved continuously. The state-ownedassets and the personal property and safety of the masses are in need of protection. Thesupervision and management network of the whole society must be improvedconstantly. So the security surveillance system is used widely, almost everywhere inthe city. The social life’s smoothness is effectively guaranteed by these equipments.With the development of the microelectronics, the image sensor plays an importantrole in the security surveillance system, likes the heart, and the performance of theimage sensor derectly decides the effect of the surveillance equipment. So this paperaims at the application of the security surveillance system, analyzes the key technicalproblems of CMOS image sensor, and puts forward the solution.
     First, against the low-noise requirement of the surveillance system, the mainnoise sources of CMOS image sensor are analyzed. And the theoretical methods andcircuit implementation of noise elimination are presented. Secondly, against the widedynamic range requirement of the surveillance system, the importance of the dynamicrange of CMOS image sensor is introduced, the main reasons of low dynamic range ofCMOS image sensor are analyzed and some methods to improve the dynamic rangeare presented. Again, against the high sensitivity requirement of the surveillancesystem, some methods for increasing the sensitivity of CMOS image sensor arerecommended. At last, through the actual chip test, the theory and methods which thispaper presents are proved that the sensitivity, noise and dynamic range are effectivelyenhanced.
     This paper has analyzed and improved the noise, dynamic range and sensitivitywhich are more important in CMOS iamge sensor in surveillance field and advancedthe some main creative points below.
     First, a new low noise and high PSRR circuit configuration is presented, whichreduces the analog circuit noise of CMOS image sensor and improves the imagequality. And according to the correlation of dark current, a method of eliminating thedark current noise by applicating dark current proportional coefficient matrix ispresented, which not only saves hardware resources, but also improves the imagequality under a dark condition.
     Second, On the basis of the theory that multiple exposures could enhance thedynamic range, a new interlaced multiple exposures way is creatively put forward. While the dynamic range effectively improved, this method also can guarantee theframe rate not to be slow down, and the hardware not to be excessive consumption.
     At last, for different applications, a new sensitivity boosting technology bychanging the capacitor of the floating node of the pixels is introduced, which achievesthe feasibility of that one chip can apply to the various surveillance conditions.
引文
[1]侯雨石,何玉清等,“数码相机图像传感器技术”,光学技术2003年01期,59-62.
    [2] Gottardi, M. A CCD/CMOS image motion sensor, Solid-State Circuits Conference,1993. Digest of Technigque Papers.40thISSCC.24-26Feb1993.194-195.
    [3] E.A., Jr. Parrish, Implications of Charge-Coupled Devices for Pattern Recognition,IEEE Transactions on Computers, Nov.1976, vol.25, no.11, pp.1146-1152.
    [4] Fossum, E.R., CMOS image sensors: electronic camera on a chip, ElectronDevices Meeting,1995., International, Dec1995, pp.17-25.
    [5]吴琦,“基于CMOS图像传感器的数字影像系统”,吉林广播电视大学学报2012年第四期,24-25.
    [6] Raty, T.D. Survey on Contemporary Remote Surveillance Systems for PublicSafety, IEEE Transactions on System, Man, and Cybernetics. Sept.2010.493-515.
    [7]黄益彬,吕洋等,“智能终端网络安全防护设计”,计算机与现代化,2012年12期,106-109.
    [8]任霞,“企业远程视频监控系统设计[D]”,吉林大学硕士论文,2011年.
    [9] Teuner, A., Hillebrand, M. Surveillance sensor systems using CMOS imagers.International Conference on Image Analysis and Processing,1999.1124-1127.
    [10] Nishikawa, Y., Kawahito, S. A High-Speed CMOS Image Sensor with On-chipParallel Image Compression Circuits. Custom Integrated Circuits Conference,2007.CICC '07. IEEE.833-836.
    [11] Carlson, B.S. Comparison of modern CCD and CMOS image sensor technologiesand systems for low resolution imaging. Sensors,2002. Proceedings of IEEE.171-176vol.1.
    [12] Lustica, A. CCD and CMOS image sensors in new HD cameras. ELMAR,2011Proceedings,14-16Sept.2011.133-136.
    [13] Fish, A. Low-power “Smart” CMOS image sensors. Circuits and Systems,2008.ISCAS2008. IEEE International Symposium on.18-21May2008.1408-1411.
    [14] Jun Hyung Bae, Jongyul Kim, Development and evaluation of a high resolutionCMOS Image Sensor with17μm×17μm pixel size for X-ray imaging, NuclearScience Symposium Conference Record (NSS/MIC),2010IEEE, Oct-Nov,2010,1062-1066.
    [15]姜秀彬,“CMOS图像传感器系统设计[D]”,浙江大学硕士论文,2006年.
    [16] Fang Tang, Bermak, A. A4T Low-Power Linear-Output Current-MediatedCMOS Image Sensor. Very Large Scale Integration (VLSI) Systems, IEEETransactions on, Volume19, Issue9, Sept.2011,1559-1568.
    [17] Jian Guo, Sonkusale, S. A High Dynamic Range CMOS Image Sensor forScientific Imaging Applications. Sensors Journral, IEEE. Oct.2009, Volume9,1209-1218.
    [18] Tochigi,Y., Hanzawa, K., A Global-Shutter CMOS Image Sensor With ReadoutSpeed of1-Tpixel/s Burst and780-Mpixel/s Continuous, Solid-State Circuits, IEEEJournal of, Jan.2013, Volume48, Issue1,329-338.
    [19] Habibi, M.,A low power smart CMOS image sensor for surveillance applications,Machine Vision and Image Processing (MVIP),27-28Oct.20106th Iranian,1-4.
    [20]连华,林斌,陈伟,“CMOS图像传感器成像系统”,光学仪器,2003年04期,12-19.
    [21] Karim, K.s., Taghibakhsh, F., Current mode active pixel sensor architectures forlarge area digital imaging, Microelectronics, Dec.2008. ICM2008. InternationalConference on,433-436.
    [22] Peng Gao, Hongda Chen, Luhong Mao, Behavior model of a CMOS processcompatible photo-diode, Group IV Photonics,2004. First IEEE InternationalConference on,29Sept.-1Oct.2004,110-112.
    [23] Tournier,A., Roy,F., Lu,G.-N.,1.4--Pitch50%Fill-Factor1TCharge-Modulation Pixel for CMOS Image Sensors, Electron Device Letters, IEEE,March2008, vol.29,221-223.
    [24]刁静,“有源像素CMOS图像传感器的设计研究[D]”,电子科技大学硕士论文,2006年.
    [25] Reiner, T., Mishori, B., CMOS image sensor3T Nwell photodiode pixel SPICEmodel, Electrical and Electronics Engineers in Israel,2004. Proceedings.200423rdIEEE Convention of, Sept.2004,161-164.
    [26] Venter, J., Sinha, S., Pixel circuit optimization for imaging applications usingintegrated circuit technologies, Microwaves, Communications, Antennas andElectronics Systems (COMCAS),2011IEEE International Conference on, Nov.2011,1-5.
    [27] Lee, Jiwon, Baek, Inkyu, Yang, Kyounghoon, New FPN correction method forPD-storage dual-capture CMOS image sensor using a nonfully depleted pinnedphotodiode, Circuits and Systems (ISCAS),2012IEEE International Symposium on,May2012,1620-1623.
    [28] Gao Jun, Chen Zhongjian, Lu Wengao, Correlated double sample design forCMOS image readout IC, Solid-State and Integrated Circuits Technology,2004.Proceedings.7th International Conference on, Oct.2004, vol.2,1437-1440.
    [29] Ay, S.U., Electrical property modelling of photodiode type CMOS active pixelsensor (APS), Circuits and Systems,2005.48th Midwest Symposium on,7-10Aug.2005, vol.1,371-375.
    [30] Place, S., Carrere, J.-P., Rad Tolerant CMOS Image Sensor Based on HoleCollection4T Pixel Pinned Photodiode, Nuclear Science, IEEE Transactions on, Dec.2012, vol.59,2888-2893.
    [31] Tsung-Hsun Tsai, Hornsey, R., A two-step readout CMOS image sensor activepixel architecture, Sensors,2011IEEE,28-31Oct.2011,1941-1945.
    [32] Yu-hwa Lo, Werner, M., The electrical and optical properties of a four-terminaltop back gate FET, Electron Devices, IEEE Transactions on, May1986, vol.33,717-722.
    [33] Margarit, J.M., Sabadell, J., A novel DPS integrator for fast CMOS imagers.Circuits and Systems,2008. ISCAS2008. IEEE International Symposium on.18-21May2008.1632-1635.
    [34] Serra-Graells, F., Margarit, J.M., Teres, L., A Self-Biased andFPN-Compensated Digital APS for Hybrid CMOS Imagers, Circuits and Systems,2007. ISCAS2007. IEEE International Symposium on, May2007,2850-2853.
    [35]潘银松,“像素级CMOS数字图像传感器的研究[D]”,重庆大学博士论文,2005年.
    [36]彭蓓,“结合数字校正技术的纳米CMOS流水线ADC设计[D]”,北京工业大学博士论文,2011年.
    [37] Vaz, B., Goes, J., A low-voltage3mW10-bit4MS/s pipeline ADC in digitalCMOS for sensor interfacing, Circuits and Systems,2005. ISCAS2005. IEEEInternational Symposium on,23-26May2005, vol.4,4074-4077.
    [38] Hashemi, F.; Hadidi, K.H.; Khoei, A.,“Design of a CMOS image sensor withpixel-level ADC in0.35/spl mu/m process”, Circuits and Systems,2003, Vol2, May2003, pp.600-603.
    [39] Reckleben, C., Hansen, K.,8-bit5-MS/s per-pixel ADC in an8-by-8Matrix,Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC),2011IEEE,668-672.
    [40] Fowler, B., El Gamal, A., Yang, D.X.D., A CMOS area image sensor withpixel-level A/D conversion, Solid-State Circuits Conference,1994. Digest ofTechnical Papers.41st ISSCC.,1994IEEE International, Feb1994,226-227.
    [41]王亚杰,“用于CMOS图像传感器的像素级模/数转换器的研究[D]”,天津大学硕士论文,2006年.
    [42] M.F. Snoeij, A.J.P. Theuwissen and J.H. Huijsing,“A1.8V3.2μW Comparatorfor Use in a CMOS Imager Column-Level Single-Slope ADC”, IEEE J. Solid-StateCircuits, Aug.2005, pp.6162-6165.
    [43] Nelson, F.Z., Ay, S.U., Integration of a New Column-Parallel ADC Technologyon CMOS Image Sensor, Microelectronics and Electron Devices (WMED),2010IEEE Workshop on,16April2010,1-4.
    [44] Ikebe, M., Motohisa, J., Sano, E., Column parallel single-slope ADC with time todigital converter for CMOS imager, Electronics, Circuits, and Systems (ICECS),201017th IEEE International Conference on, Dec.2010,863-866.
    [45] Lee, D., Han, G., High-speed, low-power correlated double sampling counter forcolumn-parallel CMOS imagers, Electronics Letters, Nov.222007, vol.43,1362-1364.
    [46] Chang-Rok Moon, Jong-Cheol Shin, Dedicated process architecture and thecharacteristics of1.4μm pixel CMOS image sensor with8M density, VLSITechnology, June2007IEEE Symposium on,62-63.
    [47] Adachi, S., Woonghee Lee, Akahane, N., A200-V/e CMOS Image SensorWith100-ke Full Well Capacity, Solid-State Circuits, IEEE Journal of, April2008,823–830.
    [48] Chen, O.T.-C., Wei-Jean Liu, Extended One-Dimensional Analysis toEffectively Derive Quantum Efficiency of Various CMOS Photodiodes, ElectronDevices, IEEE Transactions on, Oct.2007, vol.54,2659-2668.
    [49] Yu-Chuan Shih, Chung-Yu Wu, Optimal design of CMOS pseudoactive pixelsensor (PAPS) structure for low-dark-current and large-array-size imager applications,Sensors Journal, IEEE, Oct.2005, vol.5,956-963.
    [50] Virmontois, C., Goiffon, V., Influence of displacement damage dose on darkcurrent distributions of irradiated CMOS image sensors, Radiation and Its Effects onComponents and Systems (RADECS),201112th European Conference on,19-23Sept.2011,329-335.
    [51] Chang-Tsun Li, Yue Li, Color-Decoupled Photo Response Non-Uniformity forDigital Image Forensics, Circuits and Systems for Video Technology, IEEETransactions on, Feb.2012, vol.22,260-271.
    [52] Kohara, T., Woonghee Lee, A CMOS image sensor with2.0-ē random noise and110-kē full well capacity using column source follower readout circuits, DesignAutomation Conference (ASP-DAC),201015th Asia and South Pacific,18-21Jan.2010,345-346.
    [53] Watabe, T., Goto, M., Ohtake, H., A new readout circuit for an ultrahighsensitivity CMOS image sensor, Consumer Electronics, IEEE Transactions on, Aug.2002, vol.48,394-399.
    [54] Jian Guo, Sonkusale, S., A High Dynamic Range CMOS Image Sensor forScientific Imaging Applications, Sensors Journal, IEEE, Oct.2009, vol.9,1209-1218.
    [55] Stuart Kleinfelder, SukHwan Lim and Xinqiao Liu,“A10000Frames/s CMOSDigital Pixel Sensor”, IEEE J. Solid-State Circuits, vol.36, Dec.2001, pp.2049-2059.
    [56]张娜,姚素英,“用于CMOS图像传感器的列并行高精度ADC”,固体电子学研究与进展,2006年03期,349-353.
    [57]吕霆,陈蕊,“混合电路串扰和衬底耦合噪声的优化分析”,电子工艺技术,2010年03期,154-157.
    [58] Li, Hao, Zhang, Hui, Guo, Xiaolian, Image restoration after pixel binning inimage sensors, Tsinghua Science and Technology, Aug.2009, vol.14,541-545.
    [59] Seong-Jin Kim, Kim, J.D.K., Byongmin Kang, A CMOS Image Sensor Based onUnified Pixel Architecture With Time-Division Multiplexing Scheme for Color andDepth Image Acquisition, Solid-State Circuits, IEEE Journal of, Nov.2012, vol.47,2834-2845.
    [60] Xu Jiangtao, Yao Suying, Design Analysis and Optimization of a CMOS ActivePixel Sensor, Chinese Journal of Semiconductors,2006(09),1548-1551.
    [61] Martin-Gonthier, P., Molina, R., Analysis and optimization of noise response forlow-noise CMOS image sensors, New Circuits and Systems Conference (NEWCAS),2012IEEE10th International,17-20June2012,513-516.
    [62]张生才,董博彦,“光电二极管有源像素CMOS图像传感器固定模式噪声分析”,传感技术学报,2005年04期,798-801.
    [63] Balachandran, G.K., Allen, P.E., Switched-current circuits in digital CMOStechnology with low charge-injection errors, Solid-State Circuits, IEEE Journal of,Oct.2002, vol.37,1271-1281.
    [64] Jun-Myung Woo, Hong-Hyun Park, Statistical analysis of random telegraphnoise in CMOS image sensor, Simulation of Semiconductor Processes and Devices,2008. SISPAD2008. International Conference on,9-11Sept.2008,77-80.
    [65] Brouk, I., nemirovsky, A., Analysis of noise in CMOS image sensor,Microwaves, Communications, Antennas and Electronic Systems,2008. COMCAS2008. IEEE International Conference on,13-14may2008,1-8.
    [66] Hui Tian, Fowler, B., Gamal, A.E., Analysis of temporal noise in CMOSphotodiode active pixel sensor, Solid-State Circuits, IEEE Journal of, Jan.2001, vol.36,92-101.
    [67] Narasimha, R., Bandi, S.P.,1/f noise synthesis model in discrete-time for circuitsimulation, Circuits and Systems I: Regular Papers, IEEE Transactions on, June2005,vol.52,1104-1114.
    [68] Khunkhao, S., Umjaruan, C., Shot noise behavior of planar Mo/n-Si/Mophotodetector structure in avalanche mode, Electrical Engineering/ElectronicsComputer Telecommunications and Information Technology (ECTI-CON),2010International Conference on, May2010,1137-1141.
    [69]王艳,李斌桥,徐江涛,“一种消除CMOS图像传感器行噪声的时序”,传感技术学报,2011年10期,1450-1453.
    [70] El Kholy, M.M., Low noise low voltage sub bandgap reference voltage withPTAT current generator, Design and Test Workshop (IDT),20094th International,15-17Nov.2009,1-5.
    [71] Koushaeian, Leila, Skafidas, Stan, A65nm CMOS low-power, low-voltagebandgap reference with using self-biased composite cascode opamp, Low-PowerElectronics and Design (ISLPED),2010ACM/IEEE International Symposium on,18-20Aug.2010,95-98.
    [72] Mannama,V., Sabolotny, R., Ultra low noise low power LDO design, BalticElectronics Conference,2006International,2-4Oct.2006,1-4.
    [73] Liao, Lei, Lohaus, Lukas, A Low Power Bandgap Voltage Reference Circuitwith PSRR Enhancement, Ph.D. Research in Microelectronics and Electronics(PRIME),20128th Conference on, June2012,1-4.
    [74] Wonseok Oh, Bakkaloglu, B., A CMOS Low Noise, Chopper StabilizedLow-Dropout Regulator With Current-Mode Feedback Error Amplifier, Circuits andSystems I: Regular Papers, IEEE Transactions on,Nov.2008, vol.55,3006-3015.
    [75] Degerli,Y., Lavernhe,F., Column readout circuit with global charge amplifier forCMOS APS imagers, Electronics Letters,17Aug2000, vol.36,1457-1459.
    [76]刘宇,王国裕,“CMOS图像传感器固定模式噪声抑制新技术”,固体电子学研究与进展,2006年03期,345-348.
    [77]毕查德·拉扎维,“模拟CMOS集成电路设计”,西安交通大学出版社,2003年2月,343-344.
    [78] Snoeij, M.F., Theuwissen, A.J.P., A1.8V3.2μW comparator for use in aCMOS imager column-level single-slope ADC, Circuits and Systems,2005. ISCAS2005. IEEE International Symposium on,23-26May2005, vol.6,6162-6165.
    [79] Snoeij, M.R., Donegan, P., A CMOS Image Sensor with a Column-LevelMultiple-Ramp Single-Slope ADC, Solid-State Circuits Conference,2007. ISSCC2007. Digest of Technical Papers. IEEE International,11-15Feb.2007,506-618.
    [80] Xu Gong, Jinguang Jiang, A Wide Range High Power Supply Rejection Ratioand Transient Enhanced Low Drop-Out Regulator, Wireless CommunicationsNetworking and Mobile Computing (WiCOM),20106th International Conference on,23-25Sept.2010,1-4.
    [81] Snoeij, M.F., Theuwissen, A.J.P., A CMOS Imager With Column-Level ADCUsing Dynamic Column Fixed-Pattern Noise Reduction, Solid-State Circuits, IEEEJournal of, Dec.2006, vol.41,3007–3015
    [82] Svihlik, J., Dark current elimination in security imaging systems, SecurityTechnology,2008. ICCST2008.42nd Annual IEEE International CarnahanConference on,13-16Oct.2008,112-116.
    [83] Bin Luo, Fuxing Yang, Lei Yan, Key technologies and research development ofCMOS image sensors, Geoscience and Remote Sensing (IITA-GRS),2010SecondIITA International Conference on,28-31Aug.2010, vol.1,322-325.
    [84] Yue Chen, Yang Xu, Mierop, A.J., Column-Parallel Digital Correlated MultipleSampling for Low-Noise CMOS Image Sensors, Sensors Journal, IEEE, April2012,vol.12,793-799.
    [85] Akahane,N.Sugawa,S. Wide Dynamic Range CMOS Image Sensors for HighQuality Digital Camera, Security, Automotive and Medical Applications. Sensors,5thIEEE Conference,2006.396-399
    [86] Akahane,N., Sugawa,S., A sensitivity and linearity improvement of a100dBdynamic range CMOS image sensor using a lateral overflow integration capacitor,VLSI Circuits,2005. Digest of Technical Papers.2005Symposium on,16-18June2005,62-65.
    [87]付贤松,“CMOS图像传感器动态范围扩展技术的研究[D]”,天津大学博士论文,2006年.
    [88] Martinez, A., Navarro, P.J., Adaptive image acquisition and pre-processing intriggered vision systems, Industrial Electronics,2009. IECON '09.35th AnnualConference of IEEE,3-5Nov.2009,1996-2002.
    [89] Xueqiang Wang, Dong Wu, A high efficiency CMOS charge pump for lowvoltage operation, ASIC,2009. ASICON '09. IEEE8th International Conference on,20-23Oct.2009,320-323.
    [90] Baderna,D., Cabrini, A., Efficiency comparison between doubler and Dicksoncharge pumps, Circuits and Systems,2005. ISCAS2005. IEEE InternationalSymposium on,23-26May2005, vol.2,1891-1894.
    [91] Belenky, A. Fish, A., Global Shutter CMOS Image Sensor With Wide DynamicRange, Circuits and Systems II: Express Briefs, IEEE Transactions on, Dec.2007, vol.54,1032-1036.
    [92] Sandhu, T.S., Pecht, O.Y., New Memory Architecture for Rolling Shutter WideDynamic Range CMOS Imagers, Sensors Journal, IEEE, April2012, vol.12,767-772.
    [93] Jinno, T., Okuda, M., Multiple Exposure Fusion for High Dynamic Range ImageAcquisition, Image Processing, IEEE Transactions on, Jan.2012, vol.21,358-365.
    [94] Sasaki, M., Mase, M., A wide dynamic range CMOS image sensor with multipleshort-time exposures, Sensors,2004. Proceedings of IEEE, Oct.2004, vol.2,967-972.
    [95] Sasaki, M., Mase, M., A Wide-Dynamic-Range CMOS Image Sensor Based onMultiple Short Exposure-Time Readout With Multiple-Resolution Column-ParallelADC, Sensors Journal, IEEE, Jan.2007, vol.7,151-158.
    [96]张丽芳,周军.利用多曝光对图像进行动态范围增强.数据采集与处理,2007(4):417-422.
    [97]倪景华,“提高CMOS图像传感器灵敏度的工艺优化方法[D]”,上海交通大学硕士论文,2008年.
    [98] Maxwell, P., Test for low cost CMOS image sensors, Test Symposium,2005.European,22-25May2005, Conference publications.
    [99] Egawa,Y. A1/2.5inch5.2Mpixel,96dB Dynamic Range CMOS Image Sensorwith Fixed Pattern Noise Free, Double Exposure Time Read-out Operation.Solid-State Circuits conference.2006.135-138
    [100] Schanz,M. Nitta,C. A high-dynamic-range CMOS image sensor for automotiveapplications. Solid-State Circuits, IEEE journal. July2000.932-938
    [101]郎均慰,王跃明,王建宇,“高灵敏度APS CMOS图像传感器光谱探测技术研究”,光学学报,2012年07期,121-127.
    [102] Loukianova, N.V., Folkerts, H.O., Leakage current modeling of test structuresfor characterization of dark current in CMOS image sensors, Electron Devices, IEEETransactions on, Jan.2003, vol.50,77-83.

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