In situ-grown silicon quantum dots in SiC_x:H/a-C:H hetero-multilayer films prepared by plasma enhanced chemical vapor deposition method
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- 英文论文题名：In situ-grown silicon quantum dots in SiC_x:H/a-C:H hetero-multilayer films prepared by plasma enhanced chemical vapor deposition method
- 论文作者：Lihua Jiang ; Xinyu Tan ; Ting Xiao ; Peng Xiang
- 英文论文作者：Lihua Jiang ; Xinyu Tan ; Ting Xiao ; Peng Xiang ; College of Materials and Chemical Engineering ; China Three Gorges University ; Hubei Provincial Collaborative Innovation Center for New Energy Microgrid ; China Three Gorges University
- 年：2017
- 作者机构：College of Materials and Chemical Engineering, China Three Gorges University;Hubei Provincial Collaborative Innovation Center for New Energy Microgrid, China Three Gorges University;
- 会议召开时间：2017-05-27
- 会议录名称：第四届新型太阳能电池学术研讨会论文集
- 英文会议录名称：Abstract Book of the 4th Conference on New Generation Solar Cells
- 语种：英文
- 分类号：TN304
- 学会代码：ZKYQ
- 会议名称：第四届新型太阳能电池学术研讨会
- 会议地点：中国北京
- 主办单位：中国可再生能源学会光化学专业委员会
- 学会名称：中国科学院物理研究所清洁能源实验室
- 页数：1
- 文件大小：443k
- 原文格式：D
- 会议级别：全国
摘要
Silicon quantum dots(Si QDs) were grown in situ in SiC_x:H/a-C:H hetero-multilayer films at a low substrate temperature using a radio frequency(13.56MHz) plasma enhanced chemical vapor deposition(PECVD) method.The component and bonding configuration of the SiC_x:H/a-C:H hetero-multilayer films have been systematically investigated by Raman, FTIR and HRTEM testing techniques.The results show that there are amorphous Si QDs in SiC_x:H/a-C:H hetero-multilayer films.Without high temperature post-deposition annealing treatments, as increasing CH_4 flow rate, the coexistence of amorphous Si QDs and silicon nanocrystals in SiC_x:H matrix layers has been confirmed by Raman and HRTEM measurements.X-ray photoelectron spectroscopy and UV–Vis spectrometry measurements show that the a-C:H layer is mainly consisted of the sp~2-bonded and sp~3-bonded carbon atoms and its optical band gap is 1.63 eV.The obtained experimental results are meaningful to develop a method for the in situ formation of Si QDs and to reduce the barrier height between Si QDs and barrier layer in vertical direction by replacing SiC barrier layer in the SiC_x/SiC multilayer films structure with the a-C:H layer.
Silicon quantum dots(Si QDs) were grown in situ in SiC_x:H/a-C:H hetero-multilayer films at a low substrate temperature using a radio frequency(13.56MHz) plasma enhanced chemical vapor deposition(PECVD) method.The component and bonding configuration of the SiC_x:H/a-C:H hetero-multilayer films have been systematically investigated by Raman, FTIR and HRTEM testing techniques.The results show that there are amorphous Si QDs in SiC_x:H/a-C:H hetero-multilayer films.Without high temperature post-deposition annealing treatments, as increasing CH_4 flow rate, the coexistence of amorphous Si QDs and silicon nanocrystals in SiC_x:H matrix layers has been confirmed by Raman and HRTEM measurements.X-ray photoelectron spectroscopy and UV–Vis spectrometry measurements show that the a-C:H layer is mainly consisted of the sp~2-bonded and sp~3-bonded carbon atoms and its optical band gap is 1.63 eV.The obtained experimental results are meaningful to develop a method for the in situ formation of Si QDs and to reduce the barrier height between Si QDs and barrier layer in vertical direction by replacing SiC barrier layer in the SiC_x/SiC multilayer films structure with the a-C:H layer.
Silicon quantum dots(Si QDs) were grown in situ in SiC_x:H/a-C:H hetero-multilayer films at a low substrate temperature using a radio frequency(13.56MHz) plasma enhanced chemical vapor deposition(PECVD) method.The component and bonding configuration of the SiC_x:H/a-C:H hetero-multilayer films have been systematically investigated by Raman, FTIR and HRTEM testing techniques.The results show that there are amorphous Si QDs in SiC_x:H/a-C:H hetero-multilayer films.Without high temperature post-deposition annealing treatments, as increasing CH_4 flow rate, the coexistence of amorphous Si QDs and silicon nanocrystals in SiC_x:H matrix layers has been confirmed by Raman and HRTEM measurements.X-ray photoelectron spectroscopy and UV–Vis spectrometry measurements show that the a-C:H layer is mainly consisted of the sp~2-bonded and sp~3-bonded carbon atoms and its optical band gap is 1.63 eV.The obtained experimental results are meaningful to develop a method for the in situ formation of Si QDs and to reduce the barrier height between Si QDs and barrier layer in vertical direction by replacing SiC barrier layer in the SiC_x/SiC multilayer films structure with the a-C:H layer.
引文