双酚A型光刻胶的极紫外光刻研究
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- 英文论文题名：EUV lithography evaluation of photoresists based on biphenol A backbone
- 论文作者：王亮乾 ; 许箭 ; 王双青 ; 杨国强
- 英文论文作者：Liangqian Wang ; Jian Xu ; Shuangqing Wang ; Guoqiang Yang ; Institute of Chemistry ; Chinese Academy of Sciences
- 年：2016
- 作者机构：中国科学院化学研究所;
- 论文关键词：光刻胶 ; 极紫外光刻 ; 光刻工艺
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第二十七分会：光化学
- 语种：中文
- 分类号：TQ577.35
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第二十七分会 ; 光化学
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：172k
- 原文格式：D
- 会议级别：全国
摘要
本研究工作主要合成了以四溴双酚A为主体结构的新型分子玻璃化合物。其具有分子量小,单分散,热力学稳定,较高玻璃化转变温度等优点,是理想的极紫外光刻胶主体材料。将其与产酸剂、有机碱及其他添加剂复配得到正像光刻胶溶液,具有很好的成膜性。利用上海应用物理研究所软X射线光刻线站(SSRF)进行光刻实验研究,确定光刻工艺参数,已得到高灵敏度、高分辨率和低边缘粗糙度的光刻图形。
A molecular glass compound based on biphenol A(BPA-10) backbone was synthesized in this work. The compound is ideal material for extreme ultraviolet lithography with fascinating properties such as low molecular weight, monodispersity, thermal stability and high glass transition temperature. When combined with photoacid generator and other additives, the compound can be used as positive photoresist, which show excellent film-forming property. The EUV lithography processing parameters were evaluated in detail by using soft X-ray interference photolithography beamline on shanghai Synchrotron Radiation Facility(SSRF), and the high resolution and low LER patterns with relatively low exposure doses were obtained.
A molecular glass compound based on biphenol A(BPA-10) backbone was synthesized in this work. The compound is ideal material for extreme ultraviolet lithography with fascinating properties such as low molecular weight, monodispersity, thermal stability and high glass transition temperature. When combined with photoacid generator and other additives, the compound can be used as positive photoresist, which show excellent film-forming property. The EUV lithography processing parameters were evaluated in detail by using soft X-ray interference photolithography beamline on shanghai Synchrotron Radiation Facility(SSRF), and the high resolution and low LER patterns with relatively low exposure doses were obtained.
引文
[1]许箭,陈力,田凯军,胡睿,李沙瑜,王双青,杨国强.影像科学与光化学,2011,29(6):417-429
[2]杨国强,许箭,陈力,王双青,李沙瑜.专利申请号:CN201210070735.2
[3]Yang,G.Q.;Xu,J.;Chen,L.;Wang,S.Q.;Li,S.Y.PCT:CN201210156675.6
[2]杨国强,许箭,陈力,王双青,李沙瑜.专利申请号:CN201210070735.2
[3]Yang,G.Q.;Xu,J.;Chen,L.;Wang,S.Q.;Li,S.Y.PCT:CN201210156675.6