PtRh合金表面制备高质量石墨烯及其电学性质
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- 英文论文题名：High-quality Graphene Grown on Polycrystalline PtRh_(20) Alloy Foils by LPCVD and Its Electrical Transport Properties
- 论文作者：申承民 ; 杨贺 ; 田园 ; 鲍丽宏 ; 顾长志 ; 高鸿钧
- 英文论文作者：Chengmin Shen ; He Yang ; Yuan Tian ; Lihong Bao ; Changzhi Gu ; Hong-Jun Gao ; Beijing National Laboratory for Condensed Matter Physics ; Institute of Physics ; Chinese Academy of Sciences
- 年：2016
- 作者机构：北京凝聚态物理国家实验室中国科学院物理研究所;
- 论文关键词：石墨烯 ; 化学气相沉积 ; 电学性质
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第四十一分会：纳米材料与器件
- 语种：中文
- 分类号：TQ127.11
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第四十一分会 ; 纳米材料与器件
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：140k
- 原文格式：D
- 会议级别：全国
摘要
以铂铑二元合金(PtRh_(10)和PtRh_(20))作为生长基底,甲烷作为碳源,通过改变反应参数,采用低压化学气相沉积法制备出了大面积均匀的单层石墨烯。利用光学显微镜、拉曼光谱、扫描电子显微镜对石墨烯的结构、形貌和层数进行了表征。结果表明,在合金催化生长基底上可以得到大面积、高质量和均匀的单层石墨烯。通过电化学剥离方法,将石墨烯转移到SiO_2/Si衬底上,采用微加工技术,制备出以石墨烯为沟道层材料的背栅场效应晶体管,并测量和估算了所生长石墨烯的室温场效应迁移率,在PtRh_(20)上所制备石墨烯能够达到很高的室温场效应迁移率,为4000 cm~2/Vs,且在PtRh_(10)和PtRh_(20)上所制备的石墨烯均表现出P型特征。
High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh_(20) alloy foils by low pressure chemical vapor deposition(LPCVD). The morphology and the structure of the graphene were investigated by Raman spectrometer, scanning electron microscopy and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh_(20) foil at 1050 oC using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO_2/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor(FET) made of the graphene grown on PtRh_(20) was measured and reckoned at room temperature, showing that carrier mobility was about 4000 cm~2 V~(-1) s~(-1). The results indicate that desired quality of single-layer graphene grown on PtRh_(20) foils can be obtained by tuning reaction conditions.
High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh_(20) alloy foils by low pressure chemical vapor deposition(LPCVD). The morphology and the structure of the graphene were investigated by Raman spectrometer, scanning electron microscopy and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh_(20) foil at 1050 oC using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO_2/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor(FET) made of the graphene grown on PtRh_(20) was measured and reckoned at room temperature, showing that carrier mobility was about 4000 cm~2 V~(-1) s~(-1). The results indicate that desired quality of single-layer graphene grown on PtRh_(20) foils can be obtained by tuning reaction conditions.
引文
[1]Yang,H.;Shen,C.M.;Tian,Y.;Bao,L.H.Chen,P.;Yang,R.;Yang,T.Z.;Li,J.J.;Gu,C.Z.;Gao,H.-J.Appl.Phys.Lett.2016,108,063102.