CMOS有源像素图像传感器的电子辐照损伤效应研究
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- 英文论文题名：Low-energy electron radiation effects on CMOS APS
- 论文作者：玛丽娅 ; 李豫东 ; 郭旗 ; 刘昌举 ; 文林 ; 汪波
- 英文论文作者：Maria ; Yu-dong Li ; Qi Guo ; Chang-ju Liu ; Lin Wen ; Bo Wang ; The Xinjiang Technical Institute of Physics & Chemistry ; CAS ; The Chongqing Technical Institute of Photoelectronics
- 年：2014
- 作者机构：中国科学院特殊环境功能材料与器件重点实验室;新疆电子信息材料与器件重点实验室;中国科学院新疆理化技术研究所;重庆光电技术研究所;
- 论文关键词：CMOS有源像素传感器 ; 电子辐照 ; 电离效应 ; 暗电流 ; 氧化物陷阱电荷 ; 界面态缺陷
- 英文论文关键词：CMOS APS ; Electron irradiation ; Ionizing effect ; Dark current ; Oxide trapped charge ; Surface state defect
- 会议召开时间：2014-08-13
- 会议录名称：第十七届全国核电子学与核探测技术学术年会论文集
- 语种：中文
- 分类号：TP391.41;TP212
- 学会代码：HDZX
- 会议名称：第十七届全国核电子学与核探测技术学术年会
- 会议地点：中国甘肃兰州
- 主办单位：中国电子学会、中国核学会核电子学与核探测技术分会
- 学会名称：中国电子学会核电子学与核探测技术分会
- 页数：7
- 文件大小：647k
- 原文格式：D
- 会议级别：全国
摘要
对某国产CMOS图像传感器进行了1MeV、1.8MeV两种不同能量的电子辐照试验,分析了器件的电子辐照效应与损伤机理。辐照等效电离剂量为70krad(Si),在辐照前后及退火过程中采用离线测量方法,重点考察了暗信号、饱和电压、光谱响应特性等参数。实验结果表明:暗信号和暗信号非均匀性都随着辐照剂量的增加及高温退火而增大;饱和电压在两种能量电子辐照下均出现较大幅度的减小,并在高温退火过程中有所恢复;光谱响应特性无特别明显变化。经分析,暗电流、饱和电压的变化主要由辐照诱发的氧化物陷阱电荷所致的光敏二极管耗尽层展宽和界面陷阱电荷密度增加导致产生-复合中心的增加所引起。
1 MeV, 1.8 MeV electron irradiation experiments has been taken on the domestic CMOS image sensors, irradiation effect and damage mechanism of devices were analyzed.Equivalent ionization irradiation dose is 70 krad(si), off-line measuring method were used before and after irradiation and in the process of annealing, focused on the parameters such as dark signal, saturated voltage, spectral response characteristics.The experimental results show that the non-uniformity of dark signal and dark current are increased with the increase of irradiation dose and high temperature annealing.Saturation voltage are significantly reduced, and recovered in the process of high temperature annealing;there is no significant change in Spectral response characteristic.It proves that, the changes of the dark current, saturation voltage are due to broadening of the photodiodedepletion layer which is caused byirradiation-induced oxide trapped charge and increased recombination centers caused by irradiation-induced interface states.
1 MeV, 1.8 MeV electron irradiation experiments has been taken on the domestic CMOS image sensors, irradiation effect and damage mechanism of devices were analyzed.Equivalent ionization irradiation dose is 70 krad(si), off-line measuring method were used before and after irradiation and in the process of annealing, focused on the parameters such as dark signal, saturated voltage, spectral response characteristics.The experimental results show that the non-uniformity of dark signal and dark current are increased with the increase of irradiation dose and high temperature annealing.Saturation voltage are significantly reduced, and recovered in the process of high temperature annealing;there is no significant change in Spectral response characteristic.It proves that, the changes of the dark current, saturation voltage are due to broadening of the photodiodedepletion layer which is caused byirradiation-induced oxide trapped charge and increased recombination centers caused by irradiation-induced interface states.
引文
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[2]Bigas M,Cabruja E,Forest J,et al.Review of CMOS image sensors[J].Microelectronics journal,2006,37(5):433-451.
[3]Kempainen S.CMOS image sensors:eclipsing CCDs in visual information?[J].EDN,1997,42(21):101-120.
[4]Chen C H,Tsai H J,Huang K S,et al.Study for cross contamination between cmos image sensor and ic product[C]//Advanced Semiconductor Manufacturing Conference,2001 IEEE/SEMI.IEEE,2001:121-123.
[5]Wong H S P.CMOS image sensors-recent advances and device scaling considerations[C]//Electron Devices Meeting,1997.IEDM'97.Technical Digest.,International.IEEE,1997:201-204.
[6]Theuwissen A J P.CCD or CMOS image sensors for consumer digital still photography?[C]//VLSITechnology,Systems,and Applications,2001.Proceedings of Technical Papers.2001International Symposium on.IEEE,2001:168-171.
[7]Claeys C,Simoen E.Radiation effects in advanced semiconductor materials and devices[M].Springer,2002.
[8]吕玲,张进成,李亮,等.3Me V质子辐照对Al Ga N/Ga N高电子迁移率晶体管的影响[J].物理学报,2012,61(5):57202-057202.
[9]Ohyama H,Takakura K,Hanada M,et al.Degradation of Ga N LEDs by electron irradiation[J].Materials Science and Engineering:B,2010,173(1):57-60..
[10]Beaumel M,Herve D,Van Aken D.Cobalt-60,proton and electron irradiation of a radiation-hardened active pixel sensor[J].Nuclear Science,IEEE Transactions on,2010,57(4):2056-2065.
[11]孟祥提,康爱国,黄强.γ射线辐照对数字型彩色CMOS图像传感器输出特性的影响[J].原子能科学技术.2004,389(增刊):231-215.MENGXiang ti,KANG Aiguo,HUANG Qiang.Effect of gamma ray irradiation on output characteristic of color CMOS digital image sensors[J].Atomic Energy Science and Technology,2004,389(Suppl):231-215(in Chinese).
[12]周彦平,王晓明,常国龙等.CMOS图像传感器的辐射实验[J].红外与激光工程.2011,40(7):1270-1273.ZHOU Yanping,WANGXiaoming,CHANG Guolong,et al.Radiation experiment of CMOS image sensor[J].Infrared and Laser Engineering.2011,40(7):1270-1273(in Chinese).
[13]李豫东,汪波,郭旗,等.CCD与CMOS图像传感器辐射效应测试系统[J].光学精密工程,2013,21(11):42-48.LI Y D,WANG B,GUO Q,et al..Testing system for radiation effects of CCD and CMOS image sensors[J].Opt.Precision Eng.,2013,21(11):42-48.(in Chinese)
[14]Tony Y,Eric R,Richard H,et al.Design and Characterization of Ionizing Radiation-Tolerant CMOS APS Image Sensors up to 30Mrd(Si)Total Dose[J].IEEE Trans.on Nuclear Science,2001,48(6):1797-1806.
[15]Goiffon V,Magnan P,Bernard F,et al.Ionizing radiation effects on CMOS imagers manufactured in deep submicron process[C]//Electronic Imaging 2008.International Society for Optics and Photonics,2008:681607-681607-12.
[16]Goiffon V,Estribeau M,Magnan P.Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOSimaging technology[J].IEEE Transactions on Electron Devices,2009,56(11):2594-2601.
[17]Hopkinson G R,Mohammadzadeh A,Harboe-Sorensen R.Radiation effects on a radiation-tolerant CMOS active pixel sensor[J].Nuclear Science,IEEE Transactions on,2004,51(5):2753-2762.
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