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无胶转移制备超洁净悬空大单晶石墨烯
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摘要
化学气相沉积方法(CVD)制备的石墨烯单晶具有优异的光学和电学性质,甚至可与机械剥离的石墨烯相比拟~[1]。然而,如何将金属基底上的石墨烯洁净无损地转移至目标基底仍是目前亟需解决的难题。避免在转移过程中额外引入高聚物和刻蚀液残留等的污染同时制备悬空结构以减少基底掺杂都至关重要~[2]。我们通过构筑准静态转移体系,有效控制表面张力,发展了一种无高聚物辅助的无损转移方法,成功制备出了大面积悬空石墨烯。转移后的石墨烯完整度达80-100%。拉曼光谱分析证实无缺陷峰,且表现出极高的2D与G峰的峰强比(6-8),这表明悬空石墨烯质量更高,性质更本征。原子力显微镜和透射电镜证明了转移后悬空石墨烯表面的高洁净度,表面平均粗糙度低于1 nm,并可获取近微米尺度连续的高分辨晶格像。
Chemical vapor deposition(CVD) grown large single-crystal graphene(LSCG) has been proved to exhibit excellent optical and electrical properties comparable to mechanically exfoliated graphene. ~[1] However, since graphene is usually grown on metal surfaces, the transfer onto functional substrates is crucial to realize real technological applications. The presence of polymer and etchant residues and doping effect from substrates both degrade intrinsic properties of graphene. ~[2] Thus, fabricating the ultra-clean and suspended graphene is imperative. Herein, based on CVD-grown LSCG, a quasi-static, polymer-free transfer method is developed to acquire large-area, ultra-clean, suspended graphene. Intactness is up to 80-100%. Raman spectrum displays no defect-related peak and high intensity ratio of 2D to G peaks(6-8), justifying the nearly intrinsic properties of the as-fabricated graphene. Large-area continuous atomic-resolution image and average roughness smaller than 1 nm per μm~2 confirm that the suspended graphene is ultra-clean.
引文
[1]Hao,Y.;Bharathi,M.S.;Wang,L.;Liu,Y.;Chen,H.;Nie,S.Science 2013,342:720.
    [2]Lin,Y.C;Lu,C.C.;Yeh,C.H;Jin,C.Nano Lett.2012,12:414.

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