钝化法快速制备双取向石墨烯阵列
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- 英文论文题名：Rapid Growth of Angle Confined Large domain sized Graphene Array by Passivation Method
- 论文作者：任华英 ; 王欢 ; 彭海琳 ; 刘忠范
- 英文论文作者：Huaying Ren ; Huan Wang ; Hailin Peng ; Zhongfan Liu ; College of Chemistry and Molecular Engineering ; Peking University ; Academy for Advanced Interdisciplinary Studies ; Peking University
- 年：2016
- 作者机构：北京大学化学与分子工程学院;北京大学前沿交叉学科研究院;
- 论文关键词：石墨烯 ; 大单晶 ; 阵列 ; 成核密度 ; 化学气相沉积
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第四十一分会：纳米材料与器件
- 语种：中文
- 分类号：TQ127.11
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第四十一分会 ; 纳米材料与器件
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：120k
- 原文格式：D
- 会议级别：全国
摘要
石墨烯被认为是主导未来高科技竞争的超级材料之一,然而利用现有制备技术得到的石墨烯晶畴较小且取向随机,畴区之间拼接形成的高密度晶界影响了其优异的本征性质,进而阻碍了其在各行业中的应用,因此制备大畴区取向一定的石墨烯大单晶阵列具有重大的研究意义和应用前景。利用化学气相沉积的方法在商品铜箔上实现单层高质量石墨烯的制备,目前被认为是一种实现高质量石墨烯工业化生产的有效途径。以此为基础,本文从调控单晶畴区的基本原理出发提出了一种钝化活性位点法,实现了铜箔上双取向石墨烯阵列的快速可控制备。具体而言,我们首先通过特殊的退火处理在商品铜箔表面实现大面积Cu(100)晶面的构筑,然后使用外源三聚氰胺衍生物钝化铜箔表面活性位点,进而有效地降低了石墨烯在基底表面的成核密度,使少数石墨烯核有足够大的单晶的生长空间。通过此种方法,我们可以获得6毫米尺寸的大单晶石墨烯,特别地,石墨烯在基底外延生长得到只有0°与30°取向的方形石墨烯阵列,进一步生长可得到双取向的大单晶石墨烯拼接的薄膜。我们对所得石墨烯进行了一系列表征,证明了其单畴单晶性质以及成膜的优异质量,且将其应用在电热变色器件上,该器件具有变色时间短、循环性能良好的特点。
Grain boundaries(GBs) derived from coalescence of graphene domains via chemical vapor deposition degrade its excellent intrinsic nature, which largely impedes the quality of industrial graphene product. To settle this matter, methods involving full control of the number of nucleation centers and the control of the lattice orientation of graphene grains have been established variedly. Here, we present a simple catalytic surface processing method for growing well-aligned large-domain graphene bicrystals with a confined twist angle of 30°. Further nucleation density control was realized by combining with a catalytic surface passivation treatment and a 6 mm sized single-crystalline domain was successfully obtained under a considerable growth speed. A series of characterizations was conducted to demonstrate the high quality of the as-grown graphene. Our work provides an alternative design of process engineering with rapid synthesis of high-quality film with large-domain graphene bicrystals to satisfy a variety of practical applications.
Grain boundaries(GBs) derived from coalescence of graphene domains via chemical vapor deposition degrade its excellent intrinsic nature, which largely impedes the quality of industrial graphene product. To settle this matter, methods involving full control of the number of nucleation centers and the control of the lattice orientation of graphene grains have been established variedly. Here, we present a simple catalytic surface processing method for growing well-aligned large-domain graphene bicrystals with a confined twist angle of 30°. Further nucleation density control was realized by combining with a catalytic surface passivation treatment and a 6 mm sized single-crystalline domain was successfully obtained under a considerable growth speed. A series of characterizations was conducted to demonstrate the high quality of the as-grown graphene. Our work provides an alternative design of process engineering with rapid synthesis of high-quality film with large-domain graphene bicrystals to satisfy a variety of practical applications.
引文
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