基于BGA技术的毫米波垂直互连设计
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- 英文论文题名：Design on Millimeter Wave Vertical Connection Using the Technology of BGA
- 论文作者：刘巍巍 ; 谭承 ; 梁栋 ; 王康
- 英文论文作者：LIU Wei-wei ; TAN Cheng ; LIANG Dong ; WANG Kang ; The 54th Research Institute of CETC ; Institute of Electronics ; Chinese Academy of Sciences
- 年：2017
- 作者机构：中国电子科技集团公司第五十四研究所;中国科学院电子学研究所;
- 论文关键词：毫米波 ; BGA ; LTCC技术 ; 垂直互连结构
- 英文论文关键词：millimeter-wave ; BGA ; LTCC technology ; vertical transition
- 会议召开时间：2017-05-08
- 会议录名称：2017年全国微波毫米波会议论文集（中册）
- 英文会议录名称：Proceedings of 2017 National Conference on Microwave and Millimeter Waves(NCMMW2017)
- 语种：中文
- 分类号：TN958.92
- 学会代码：ZDWB
- 会议名称：2017年全国微波毫米波会议
- 会议地点：中国浙江杭州
- 主办单位：中国电子学会
- 学会名称：中国电子学会微波分会
- 页数：4
- 文件大小：1185k
- 原文格式：D
- 会议级别：全国
摘要
本文介绍了一种采用低温共烧陶瓷(LTCC)技术制作的适用于毫米波多层系统封装的BGA垂直互连设计。该设计主要包括CPW转同轴结构、BGA互连结构和同轴转带状线结构三部分。通过优化设计和实际测试,表明整个结构适用于DC~35GHz频段内的3D SIP封装,在5GHz、15GHz、25GHz、35GHz的插入损耗分别为0.45d B、0.87d B、1.07d B、2.1d B,相对应的回波损耗24d B、18d B、21d B、11d B。
This paper introduce a kind of BGA vertical interconnect design, that is used by the low temperature co-firing ceramic(LTCC) technology and is suitable for the multilayer system packaging of millimeter wave. The design mainly includes three parts, that the conversion structure of CPW and coaxial, the BGA interconnection structure, and the conversion structure of coaxial and stripline. Through the optimization design of simulation and actual testing, the results show that the whole structure is suitable for the 3D SIP packaging within the DC~35GHz frequencies. The insertion loss, respectively, is 0.45 d B、0.87 d B、1.07 d B and 2.1d B at 5GHz、15GHz、25GHz and 35 GHz. The corresponding return loss is 24 d B、18d B、21d B and 11 d B.
This paper introduce a kind of BGA vertical interconnect design, that is used by the low temperature co-firing ceramic(LTCC) technology and is suitable for the multilayer system packaging of millimeter wave. The design mainly includes three parts, that the conversion structure of CPW and coaxial, the BGA interconnection structure, and the conversion structure of coaxial and stripline. Through the optimization design of simulation and actual testing, the results show that the whole structure is suitable for the 3D SIP packaging within the DC~35GHz frequencies. The insertion loss, respectively, is 0.45 d B、0.87 d B、1.07 d B and 2.1d B at 5GHz、15GHz、25GHz and 35 GHz. The corresponding return loss is 24 d B、18d B、21d B and 11 d B.
引文
[1]Jacob Minz,Eric Wong.Placement and Routing for 3D System-On-Package Designs[J],IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES,2005(1):1-14
[2]Heyen,J.,von Kerssenbrock,T.,Chemyakov,A..Novel LTCC-BGA modules for highly integrated millimeter-wave transceivers[J].IEEE Trans.Microw.Theory Tech.,2003(51):2589-2596
[3]O.Nousiainen,J.Putaala.Failure mechanisms of thermomechanically loaded SAC/PCSB composite ioints in LTCC/PWB assemblies[J],J Electron Mater 2007(36):232-241
[4]T.Kangasvieri,J.Halme,et a1.An ultrawideband BGA-via transition for high—speed digital and millimeter wave packaging applications[C],IEEE MTT-S Dig,Honolulu,2007:1637-1640
[5]Torben Baras,Arne F Jacob.Advanced Broadband2nd-Level-Interconnects for LTCC Multi-Chip-Modules[C].Ge Mi C 2005:21-24
[6]Y C.Lee.CPW-to-stripline vertical VIA transitions for60GHZ LTCC SOP applications[J].Progress In Electromagnetic Research Letters.2008(2):37-44
[7]K.Gawon,C.W.L.Albert,3D Strip Meander Delay Line Structure for Multilayer LTCC-based Si P Applications,Electronic Components and Technology Conference,2008:2081-2085
[8]F.J.Schmückle,A.Jentzsch,et.al,LTCC as MCM Substrate:Design of Strip-Line Structure and Flip-Chip Interconnects,IEEE MTT-S Int.Microwave Symp.Dig.,2001:1903-1906
[9]周骏,窦文斌,沈亚,李辉.应用SIP技术的宽带板间垂直互连结构[J].固体电子学研究与进展,2012,32(1):36-39
[2]Heyen,J.,von Kerssenbrock,T.,Chemyakov,A..Novel LTCC-BGA modules for highly integrated millimeter-wave transceivers[J].IEEE Trans.Microw.Theory Tech.,2003(51):2589-2596
[3]O.Nousiainen,J.Putaala.Failure mechanisms of thermomechanically loaded SAC/PCSB composite ioints in LTCC/PWB assemblies[J],J Electron Mater 2007(36):232-241
[4]T.Kangasvieri,J.Halme,et a1.An ultrawideband BGA-via transition for high—speed digital and millimeter wave packaging applications[C],IEEE MTT-S Dig,Honolulu,2007:1637-1640
[5]Torben Baras,Arne F Jacob.Advanced Broadband2nd-Level-Interconnects for LTCC Multi-Chip-Modules[C].Ge Mi C 2005:21-24
[6]Y C.Lee.CPW-to-stripline vertical VIA transitions for60GHZ LTCC SOP applications[J].Progress In Electromagnetic Research Letters.2008(2):37-44
[7]K.Gawon,C.W.L.Albert,3D Strip Meander Delay Line Structure for Multilayer LTCC-based Si P Applications,Electronic Components and Technology Conference,2008:2081-2085
[8]F.J.Schmückle,A.Jentzsch,et.al,LTCC as MCM Substrate:Design of Strip-Line Structure and Flip-Chip Interconnects,IEEE MTT-S Int.Microwave Symp.Dig.,2001:1903-1906
[9]周骏,窦文斌,沈亚,李辉.应用SIP技术的宽带板间垂直互连结构[J].固体电子学研究与进展,2012,32(1):36-39