基于Statz模型的射频MOSFET非线性电容建模
|
摘要
研究了Statz模型对于表征射频(RF)金属氧化物半导体场效应晶体管(MOSFET)器件特性的适用情况,并提出了一个MOSFET非线性电容改进模型。对英飞凌公司生产的规格为4×0.6μm×18(栅指数×栅宽×元胞数)、栅长为90 nm的MOSFET进行S参数实验测量。经过去嵌剥离所有寄生元件后,在多个偏置条件下分别使用小信号等效电路模型提取出MOSFET非线性栅源电容C_(gs)和栅漏电容C_(gd)的数据;对比了传统Statz模型以及改进模型的仿真结果与实验测量数据的相对误差。仿真结果和误差分析表明改进模型与实验测量数据吻合很好,在大部分工作范围内误差控制在5%以下,证明改进模型适用于表征MOSFET的非线性电容特性。
The applicability of the Statz model to characterize the characteristics of radio frequency(RF) metal-oxide-semiconductor field-effect-transistors(MOSFETs) was studied, and an improved model of MOSFET nonlinear capacitance was proposed. S parameters were measured on a 90 nm gate length MOSFET fabricated by Infineon Technologies with a specification of 4×0.6 μm×18(number of gate fingers×gate width×number of unit cells). After de-embedding and stripping off all parasitic components, a small signal equivalent circuit model was applied to extract the nonlinear gate-to-source capacitance C_(gs) and gate-to-drain capacitence C_(gd) data under multiple bias conditions. The relative errors of the simulation results and experimental data between the traditional Statz model and the improved model were compared. The simulation results and error analysis show that the data of the improved model are well agree with the experimental data, and the error is controlled below 5% in most working range, which proves that the improved model is suitable to characterize the nonlinear capacitance characteristics of MOSFETs.
The applicability of the Statz model to characterize the characteristics of radio frequency(RF) metal-oxide-semiconductor field-effect-transistors(MOSFETs) was studied, and an improved model of MOSFET nonlinear capacitance was proposed. S parameters were measured on a 90 nm gate length MOSFET fabricated by Infineon Technologies with a specification of 4×0.6 μm×18(number of gate fingers×gate width×number of unit cells). After de-embedding and stripping off all parasitic components, a small signal equivalent circuit model was applied to extract the nonlinear gate-to-source capacitance C_(gs) and gate-to-drain capacitence C_(gd) data under multiple bias conditions. The relative errors of the simulation results and experimental data between the traditional Statz model and the improved model were compared. The simulation results and error analysis show that the data of the improved model are well agree with the experimental data, and the error is controlled below 5% in most working range, which proves that the improved model is suitable to characterize the nonlinear capacitance characteristics of MOSFETs.
引文
[1] TELLEZ J R,AL-DAAS M,MEZHER K A.Comparison of nonlinear MESFET models for wideband circuit design[J].IEEE Transactions on Electron Devices,1994,41(3):288-293.
[2] 高建军.场效应晶体管射频微波建模技术[M].北京:电子工业出版社,2007:28,138-142.
[3] CHENG Y H.MOSFET modeling for RF IC design [J].International Journal of High Speed Electronics and Systems,2001,11(04):1007-1084.
[4] 孟茜倩,程加力,高建军.基于MESFET非线性模型的MOSFET DC建模技术[J].电子器件,2012,35(3):263-266.MENG X Q,CHENG J L,GAO J J.MOSFET DC mode-ling technique based on nonlinear MESFET models [J].Chinese Journal of Electron Devices,2012,35(3):263-266 (in Chinese).
[5] 程加力,韩波,李寿林,等.基于GaAs STATZ模型的RF MOSFET DC建模技术[J].半导体技术,2011,36(8):591-594,603.CHENG J L,HAN B,LI S L,et al.RF MOSFET DC modeling technique based on GaAs STATZ model [J].Semiconductor Technology,2011,36(8):591-594,603 (in Chinese).
[6] YU B,WANN C H J,NOWAK E D,et al.Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's[J].IEEE Transactions on Electron Devices,1997,44(4):627-634.
[7] SHINTANI M,NAKAMURA Y,OISHI K,et al.Surface-potential-based silicon carbide power MOSFET model for circuit simulation [J].IEEE Transactions on Power Electronics,2018,33(12):10774-10783.
[8] WU L,XIAO L,ZHAO J,et al.Physical analysis and modeling of the nonlinear miller capacitance for SiC MOSFET [C] // Proceedings of the 43rd Annual Conference of the IEEE Industrial Electronics Society.Beijing,China,2017:1411-1416.
[9] DUAN Z L,FAN T,WEN X H,et al.Improved SiC power MOSFET model considering nonlinear junction capacitances [J].IEEE Transactions on Power Electronics,2017,33(3):2509-2517.
[10] 顾聪,刘佑宝.一种提取 Statz MESFET非线性电容模型参数的方法[J].微电子学与计算机,2000,17(5):45-47.GU C,LIU Y B.An approach to extract parameters for Statz MESFET nonlinear capacitor model [J].Micro-electronics and Computer,2000,17(5):45-47 (in Chinese).
[11] STATZ H,NEWMAN P,SMITH I W,et al.GaAs FET device and circuit simulation in SPICE [J].IEEE Tran-sactions on Electron Devices,1987,34(2):160-169.
[12] ZHOU Y,YU P P,GAO J J.Radio-frequency modeling and parameters extraction of multi-cell MOSFET device [J].Journal of Infrared and Millimeter Waves,2017,36(5):550-553.
[13] ZHOU Y,YU P P,YAN N,et al.An improved de-embedding procedure for nanometer MOSFET small signal modeling [J].Microelectronics Journal,2016,57:60-65.
[14] 程加力.射频微波MOS器件参数提取与建模技术研究[D].上海:华东师范大学,2012.
[15] GAO J,WERTHOF A.Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit [J].IET Microwaves,Antennas & Propagation,2009,3(4):564-571.
[16] 刘林盛.场效应晶体管的大信号模型研究[D].成都:电子科技大学,2011.
[17] CIRIT M A.The Meyer model revisited:why is charge not conserved?[J].IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,1989,8(10):1033-1037.
[2] 高建军.场效应晶体管射频微波建模技术[M].北京:电子工业出版社,2007:28,138-142.
[3] CHENG Y H.MOSFET modeling for RF IC design [J].International Journal of High Speed Electronics and Systems,2001,11(04):1007-1084.
[4] 孟茜倩,程加力,高建军.基于MESFET非线性模型的MOSFET DC建模技术[J].电子器件,2012,35(3):263-266.MENG X Q,CHENG J L,GAO J J.MOSFET DC mode-ling technique based on nonlinear MESFET models [J].Chinese Journal of Electron Devices,2012,35(3):263-266 (in Chinese).
[5] 程加力,韩波,李寿林,等.基于GaAs STATZ模型的RF MOSFET DC建模技术[J].半导体技术,2011,36(8):591-594,603.CHENG J L,HAN B,LI S L,et al.RF MOSFET DC modeling technique based on GaAs STATZ model [J].Semiconductor Technology,2011,36(8):591-594,603 (in Chinese).
[6] YU B,WANN C H J,NOWAK E D,et al.Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's[J].IEEE Transactions on Electron Devices,1997,44(4):627-634.
[7] SHINTANI M,NAKAMURA Y,OISHI K,et al.Surface-potential-based silicon carbide power MOSFET model for circuit simulation [J].IEEE Transactions on Power Electronics,2018,33(12):10774-10783.
[8] WU L,XIAO L,ZHAO J,et al.Physical analysis and modeling of the nonlinear miller capacitance for SiC MOSFET [C] // Proceedings of the 43rd Annual Conference of the IEEE Industrial Electronics Society.Beijing,China,2017:1411-1416.
[9] DUAN Z L,FAN T,WEN X H,et al.Improved SiC power MOSFET model considering nonlinear junction capacitances [J].IEEE Transactions on Power Electronics,2017,33(3):2509-2517.
[10] 顾聪,刘佑宝.一种提取 Statz MESFET非线性电容模型参数的方法[J].微电子学与计算机,2000,17(5):45-47.GU C,LIU Y B.An approach to extract parameters for Statz MESFET nonlinear capacitor model [J].Micro-electronics and Computer,2000,17(5):45-47 (in Chinese).
[11] STATZ H,NEWMAN P,SMITH I W,et al.GaAs FET device and circuit simulation in SPICE [J].IEEE Tran-sactions on Electron Devices,1987,34(2):160-169.
[12] ZHOU Y,YU P P,GAO J J.Radio-frequency modeling and parameters extraction of multi-cell MOSFET device [J].Journal of Infrared and Millimeter Waves,2017,36(5):550-553.
[13] ZHOU Y,YU P P,YAN N,et al.An improved de-embedding procedure for nanometer MOSFET small signal modeling [J].Microelectronics Journal,2016,57:60-65.
[14] 程加力.射频微波MOS器件参数提取与建模技术研究[D].上海:华东师范大学,2012.
[15] GAO J,WERTHOF A.Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit [J].IET Microwaves,Antennas & Propagation,2009,3(4):564-571.
[16] 刘林盛.场效应晶体管的大信号模型研究[D].成都:电子科技大学,2011.
[17] CIRIT M A.The Meyer model revisited:why is charge not conserved?[J].IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,1989,8(10):1033-1037.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |