摘要
介绍了Cu基铜铁矿结构透明导电氧化物(TCO)材料的结构特点,综述了几种主要Cu基铜铁矿结构TCO材料如CuAlO2、CuGaO2、CuInO2和CuScO2在理论计算以及实验研究方面的最新进展。其中,CuAlO2的相关研究开始较早,数量较多;由于可能具有较高的p型导电特性,CuScO2的相关研究也较多;而有关CuGaO2和CuInO2的研究则较少。最后介绍了这几种TCO材料在掺杂改性方面的研究进展。
The crystal structure characteristics of Cu-based transparent conductive oxides(TCO)materials with delafossite structure are introduced,and the latest theoretical and experimental research progresses of the four mostly important Cu-based TCO materials such as CuAlO2,CuGaO2,CuInO2 and CuScO2 are reviewed.The studies on CuAlO2 began early and have been done widely,and there are many investigations on CuScO2 because of its potentially larger p-type conductivity,and the studies on CuGaO2 and CuInO2 are less relatively.Finally,the research progress on the doping of these Cu-based TCO materials are introduced.
引文
1 姜辛,孙超,洪瑞江,等.透明导电氧化物薄膜[M].北京:高等教育出版社,2008
2 Kawazoe H,Yasukawa M.P-type electrical conduction in transparent thin films of CuAlO2[J].Nature,1997,389(6654):939
3 Lewis B G,Paine D C.Applications and processing of transparent conducting oxides[J].MRS Bull,2000,25(8):22
4 Vaithianathan V.Room-temperature spin coherence in ZnO[J].Appl Phys Lett,2005,86(6):2101
5 邓赞红,董伟伟,陶汝华,等.p型铜铁矿结构氧化物材料研究进展[J].材料导报,2006,20(3):37
6 Tate J,Jayaraja M K,Draesekea A D,et al.p-type oxides for use in transparent diodes[J].Thin Solid Films,2002,411(1):119
7 Kandpal H C,Seshadri R.First-principles electronic structure of the delafossites ABO2(A=Cu,Ag,Au;B=Al,Ga,Sc,In,Y):Evolution of d10-d10interactions[J].Solid State Sci,2002,4(8):1045
8 Lee M S,Kim T Y,Kim D.Anisotropic electrical conductivity of delafossite-type CuAlO2laminar crystal[J].Appl Phys Lett,2001,79(13):2028
9 Nie X L,Wei S H,Zhang S B.Bipolar doping and band-gap anomalies in delafossite transparent conductive oxides[J].Phys Rev Lett,2002,88(6):066405
10 Arnold T,Payne D J,Bourlange A,et al.X-ray spectroscopic study of the electronic structure of CuCrO2[J].Phys Rev B,2009,79(7):075102
11 Stauber R E,Perkins J D,Parilla P A,et al.Thin film growth of transparent p-type CuAlO2[J].Electrochem Solid-State Lett,1999,2(12):654
12 Yanagi H,Moue S I,Hamada N.Electronics structure and optoelectronic properties of transparent p-type conducting CuAlO2[J].J Appl Phys,2000,88(7):4159
13 Benerjee A N,Maity R,Chattopadhyay K K.Preparation of p-type transparent conducting CuAlO2thin films by reactive DC sputtering[J].Mater Lett,2003,58(1-2):10
14 Tate J,Ju H L,Moon J C,et al.Origin of p-type conduction in single-crystal CuAlO2[J].Phys Rev B,2009,80(16):165206
15 兰伟,董国波,张铭,等.衬底温度对溅射法生长Cu-Al-O薄膜性能的影响[J].稀有金属材料与工程,2007,36(S1):921
16 刘高斌,王新强,冯庆,等.电子束蒸发制备CuAlO2透明导电膜及光学性质[J].功能材料,2007,38(12):1941
17 赵凡贵.p型透明导电氧化物CuAlO2薄膜的制备与物性研究[D].哈尔滨:哈尔滨工业大学,2009
18 Tonooka K,Bando H,Aiura Y.Photovoltaic effect observed in transparent p-n heterojunctions based on oxide semiconductors[J].Thin Solid Films,2003,445(12):327
19 Christensen N E,Svane A,Laskowski R,et al.Electronic properties of 3R-CuAlO2under pressure:Three theoretical approaches[J].Phys Rev B,2010,81(4):045203
20 Jayalakshmi V,Murugan R,Palanivel B.Electronic and structural properties of CuMO2(M=Al,Ga,In)[J].J Alloys Compd,2005,388(1):19
21 Liu Q J,Liu Z T,Feng L P.Theoretical calculations of mechanical,electronic,chemical bonding and optical properties of delafossite CuAlO2[J].Physica B,2010,405(8):2028
22 Liu Q J,Liu Z T,Feng L P,et al.Density functional theory study of 3R-and 2H-CuAlO2under pressure[J].Appl Phys Lett,2010,97(14):141917
23 Mine T,Yanagi H,Nomura K,et al.Control of carrier concentration and surface flattening of CuGaO2epitaxial films for a p-channel transparent transistor[J].Thin Solid Films,2008,516(17):5790
24 Ueda K,Hase T,Yanagi H,et al.Epitaxial growth of transparent p-type conducting CuGaO2thin films on sapphire(001)substrates by pulsed laser deposition[J].J Appl Phys,2001,89:1790
25 Pellicer-Porres J,Segura A,Ferrer-Roca C,et al.Structural evolution of the CuGaO2delafossite under high pressure[J].Phys Rev B,2004,69(2):024109
26 Bruce Gall R,Ashmore N,Marquardt M A,et al.Synthesis,microstructure,and electrical properties of the delafossite compound CuGaO2[J].J Alloys Compd,2005,391(1-2):262
27 Godinho K G,Morgan B J,Allen J P,et al.Chemical bonding in copper-based transparent conducting oxides:CuMO2(M=In,Ga,Sc)[J].J Phys:Condens Matter,2011,23(33):334201
28 Fang Z J,Fang C,Shi L J,et al.First-principles study of defects in CuGaO2[J].Chin Phys Lett,2008,25(8):2997
29 Lee J C,Heo Y W,Lee J H,et al.Growth of CuInO2thin film using highly dense Cu2O-In2O3composite targets[J].Thin Solid Films,2009,518(4):1234
30 Sasaki M,Shimode M.Fabrication of bipolar CuInO2with delafossite structure[J].J Phys Chem Solids,2003,64(9-10):1675
31 Yanagi H,Ueda K,Ohta H,et al.Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2semiconducting oxide with delafossite structure[J].Solid State Commun,2012,121:15
32 Trani F,Vidal J,Botti S,et al.Band structures of delafossite transparent conductive oxides from a self-consistent GW approach[J].Phys Rev B,2010,82(8):085115
33 Falabretti B,Robertson J.Electronic structures and doping of SnO2,CuAlO2,and CuInO2[J].J Appl Phys,2007,102(12):123703
34 Liu W T,Liu Q J,Liu Z T.First-principles studies of structural,mechanical,electronic,optical properties and pressure-induced phase transition of CuInO2polymorph[J].Physica B,2012,407(24):4665
35 Kakehi Y,Satoh K,Yotsuya T,et al.Optical and electrical properties of CuScO2epitaxial films prepared by combining two-step deposition and post-annealing techniques[J].J Cryst Growth,2009,311(4):1117
36 Gilliland S,Sánchez-Royo J F,Pellicer-Porres J,et al.Electronic structure of p-type ultraviolet-transparent conducting CuScO2films[J].Thin Solid Films,2008,516(7):1431
37 Gilliland S,Pellicer-Porres J,Segura A,et al.Electronic structure of CuAlO2and CuScO2delafossites under pressure[J].Phys Status Solidi(b),2007,244(1):309
38 Nagarajan R,Duan N,Jayaraj M K,et al.p-type conductivity in the delafossite structure[J].Int J Inorg Mater,2001,3(3):265
39 Shi L J,Fang Z J,Li J B.First-principles study of p-type transparent conductive oxides CuXO2(X=Y,Sc,and Al)[J].J Appl Phys,2008,104(7):073527
40 Fang Z J,Shi L J,Liu Y H.First-principle study of native defectsin CuScO2and CuYO2[J].Chin Phys B,2008,17(11):4279
41 Fang Z J,Shi L J.First-principle study of extrinsic defects in CuScO2and CuYO2[J].Phys Lett A,2008,372(21):3759
42 董国波.p型透明导电氧化物CuAlO2系薄膜的取向调制及掺杂改性研究[D].北京:北京工业大学,2010
43 Gao H G,Zhou J,Lu M H.First principles study of CuAlO2doping with S[J].Sci China:Physics,Mechanical Astronomy,2010,53(7):1261
44 Singh M,Mehta B R,Varandani D,et al.Electrical and optical properties of Sn doped CuInO2thin films:Conducting atomic force microscopy and spectroscopic ellipsometry studies[J].J Appl Phys,2009,106(5):053709
45 Liu L,Bai K,Gong H,et al.First-principles study of Sn and Ca doping in CuInO2[J].Phys Rev B,2005,72(12):125204
46 Kakehi Y,Satoh K,Yotsuya T,et al.Epitaxial growth of CuScO2thin films on sapphire a-plane substrates by pulsed laser deposition[J].J Appl Phys,2005,97:083535
47 方志杰,莫曼,朱基珍,等.透明导电氧化物CuScO2的密度泛函理论研究[J].物理学报,2012(22):227401