Aging mechanism of GaN-based yellow LEDs with V-pits
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摘要
GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm~2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm~2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.
GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm~2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm~2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.
GaN-based yellow light-emitting diodes(LEDs) on Si substrates are aged at a direct current density of 50 A/cm~2 for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm~2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.
引文
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[17] Zhu D, Xu J, Noemaun A N, Kim J K, Schubert E F, Crawford M H and Koleske D D 2009 Appl. Phys. Lett. 94 081113
[18] Han D P, Oh C H, Zheng D G, Kim H, Shim J I, Kim K S and Shin D S 2015 Jpn. J. Appl. Phys. 54 02BA01
[19] Schubert E F 2006 Light-emitting diodes(Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, Sao Paulo:Cambridge University Press)
[20] Pavesi M, Manfredi M, Salviati G, et al. 2004 Appl. Phys. Lett. 84 3403
[21] Salviati G, Rossi F, Armani N, et al. 2004 Eur. Phys. J.-Appl. Phys. 27345
[22] Tao X X, Mo C L, Liu J L, et al. 2018 Chin. Phys. Lett. 35 057303
[23] Quan Z, Wang L, Zheng C, Liu J and Jiang F 2014 J. Appl. Phys. 116183107
[24] Wu X, Liu J and Jiang F 2015 J. Appl. Phys. 118 164504
[2] Zhang J, Xiong C, Liu J, Quan Z, Wang L and Jiang F 2014 Appl. Phys.A 114 1049
[3] Tao X, Liu J, Zhang J, Mo C, Xu L, Ding J and Pan S 2018 Opt. Mater.Express 8 1221
[4] La Grassa M, Meneghini M, De Santi C, Mandurrino M, Goano M,Bertazzi F and Zanoni E 2015 Microelectron. Reliab. 55 1775
[5] Buffolo M, De Santi C, Meneghini M, Rigon D, Meneghesso G and Zanoni E 2015 Microelectron. Reliab. 55 1754
[6] Zhang N, Wei X C, Lu K Y et al 2016 Chin. Phys. Lett. 33 117302
[7] Barton D L, Osinski M, Perlin P, Eliseev P G and Lee J 1999 Microelectron. Reliab. 39 1219
[8] Meneghini M, Podda S, Morelli A, Pintus R, Trevisanello L,Meneghesso G and Zanoni E 2006 Microelectron. Reliab. 46 1720
[9] Fu J, Zhao L, Cao H, Sun X, Sun B, Wang J and Li J 2016 AIP Adv. 6055219
[10] Hsu C Y, Lan W H and Wu Y S 2003 Appl. Phys. Lett. 83 2447
[11] Kim J, Cho Y H, Ko D S, Li X S, Won J Y, Lee E and Kim S 2014 Opt.Express 22 A857
[12] Han S H, Lee D Y, Shim H W et al 2013 Appl. Phys. Lett. 102 251123
[13] Li C K, Wu C K, Hsu C C, Lu L S, Li H, Lu T C and Wu Y R 2016AIP Adv. 6 055208
[14] Li Y, Yun F, Su X, Liu S, Ding W and Hou X 2014 J. Appl. Phys. 116123101
[15] Kim K S, Han D P, Kim H S and Shim J I 2014 Appl. Phys. Lett. 104091110
[16] Han D P, Zheng D G, Oh C H, Kim H, Shim J I, Shin D S and Kim K S 2014 Appl. Phys. Lett. 104 151108
[17] Zhu D, Xu J, Noemaun A N, Kim J K, Schubert E F, Crawford M H and Koleske D D 2009 Appl. Phys. Lett. 94 081113
[18] Han D P, Oh C H, Zheng D G, Kim H, Shim J I, Kim K S and Shin D S 2015 Jpn. J. Appl. Phys. 54 02BA01
[19] Schubert E F 2006 Light-emitting diodes(Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, Sao Paulo:Cambridge University Press)
[20] Pavesi M, Manfredi M, Salviati G, et al. 2004 Appl. Phys. Lett. 84 3403
[21] Salviati G, Rossi F, Armani N, et al. 2004 Eur. Phys. J.-Appl. Phys. 27345
[22] Tao X X, Mo C L, Liu J L, et al. 2018 Chin. Phys. Lett. 35 057303
[23] Quan Z, Wang L, Zheng C, Liu J and Jiang F 2014 J. Appl. Phys. 116183107
[24] Wu X, Liu J and Jiang F 2015 J. Appl. Phys. 118 164504