GaN功率器件预驱动芯片设计与封装集成
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摘要
氮化镓GaN(gallium nitride)功率器件因其出色的导通与开关特性,能够实现系统高频化与小型化,有效提升系统功率密度。但是,增强型GaN功率器件由于其栅极可靠性问题,使其在电源管理系统中无法直接替换传统硅基功率MOSFET器件。为此,提出一种预驱动芯片,通过片内集成LDO与电平移位结构,实现兼容12～15 V输入,并输出5 V信号对GaN功率器件的栅极进行有效与可靠控制,达到兼容传统硅基功率器件应用系统的要求。此外,通过多芯片合封技术,将预驱动芯片与GaN功率器件实现封装集成,降低了寄生电感,使其应用可靠性进一步提升。
Owing to their excellent on-state and switching characteristics, gallium nitride(GaN) power devices can meet the high-frequency and miniaturization requirements for electronic power systems, thus effectively improving the systems' power density. However, the enhanced GaN power device cannot directly replace the Si-based power MOSFET device in the power management system because of the reliability problem with its gate. Accordingly, a pre-driver chip for GaN power device integrating the low dropout regulator(LDO) and the level-shift structure is proposed, which is compatible with the 12 ～15 V input and can output 5 V signal to effectively and reliably control the gate in GaN power devices. In this way, the compatibility requirement for the system with the application of the conventional Si-based power devices is satisfied. In addition, the pre-driver chip and the GaN power device are packaged in one chip using the multichip packaging technology, which reduces the parasitic inductance and further improves the application reliability.
Owing to their excellent on-state and switching characteristics, gallium nitride(GaN) power devices can meet the high-frequency and miniaturization requirements for electronic power systems, thus effectively improving the systems' power density. However, the enhanced GaN power device cannot directly replace the Si-based power MOSFET device in the power management system because of the reliability problem with its gate. Accordingly, a pre-driver chip for GaN power device integrating the low dropout regulator(LDO) and the level-shift structure is proposed, which is compatible with the 12 ～15 V input and can output 5 V signal to effectively and reliably control the gate in GaN power devices. In this way, the compatibility requirement for the system with the application of the conventional Si-based power devices is satisfied. In addition, the pre-driver chip and the GaN power device are packaged in one chip using the multichip packaging technology, which reduces the parasitic inductance and further improves the application reliability.
引文
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[2]Seeman M D,Bahl S R,Anderson D I,et al.Advantages of GaN in a high-voltage resonant LLC converter[C].2014 IEEEApplied Power Electronics Conference and Exposition-APEC2014.Fort Worth,TX,USA,2014:476-483.
[3]Cucak D,Vasic M,García O,et al.Application of eGaNFETs for highly efficient radio frequency power amplifier[C].2012 7th International Conference on Integrated Power Electronics Systems(CIPS).Nuremberg,Germany,2012:1-6.
[4]Costinett D,Nguyen H,Zane R,et al.GaN-FET based dual active bridge DC-DC converter[C].2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition(APEC).Fort Worth,TX,USA,2011:1425-1432.
[5]Kimball D F,Jeong J,Hsia C,et al.High-efficiency envelope-tracking W-CDMA base-station amplifier using GaNHFETs[J].IEEE Transactions on Microwave Theory and Techniques,2006,54(11):3848-3856.
[6]Mishra U K,Shen Likun,Kazior T E,et al.GaN-based RF power devices and amplifiers[J].Proceedings of the IEEE,2008,96(2):287-305.
[7]Song M K,Chen Lei,Sankman J,et al.16.7 A 20 V 8.4W 20MHz four-phase GaN DC-DC converter with fully onchip dual-SR bootstrapped GaN FET driver achieving 4 ns constant propagation delay and 1 ns switching rise time[C].2015 IEEE International Solid-State Circuits Conference-(ISSCC)Digest of Technical Papers.San Francisco,CA,USA,2015:1-3.
[8]Murphy M.Cascode circuit employing a depletion-mode,GaN-based FET:U.S.Patent 7,501,670[P].2009-3-10.
[9]Huang Xiucheng,Li Qiang,Liu Zhengyang,et al.Analytical loss model of high voltage GaN HEMT in cascode configuration[J].IEEE Transactions on Power Electronics,2014,29(5):2208-2219.
[10]Huang Xiucheng,Du Weijing,Lee F C,et al.Avoiding divergent oscillation of a cascode GaN device under high-current turn-off condition[J].IEEE Transactions on Power Electronics,2017,32(1):593-601.
[11]Huang Xiucheng,Du Weijing,Lee F C,et al.Avoiding Si MOSFET avalanche and achieving zero-voltage switching for cascode GaN devices[J].IEEE Transactions on Power Electronics,2016,31(1):593-600.
[12]Persson E.Practical application of 600 V GaN HEMTs in power electronics[C/OL].Applied Power Electronics Conference and Exposition(APEC),Professional Education Seminar.Washington DC,USA,(2015-03-16).[2019-02-28].https://www.infineon.com/dgdl/Infineon-Presentation_GalliumNitride_GaNApplications_SeminarAPEC2015-AP-v01_00-EN.pdf?fileId=5546d4624bcaebcf014c2c265e69007e.
[13]Liu Zhengyang.Characterization and failure mode analysis of cascode GaN HEMT[D].Blacksburg,Virginia,USA:Virginia Tech,2014.
[14]EPC2001-Enhancement Mode Power Transistor[EB/OL].[2019-02].https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2001.aspx.
[15]S尴rensen C,Fogsgaard M L,Christiansen M N,et al.Conduction,reverse conduction and switching characteristics of GaN E-HEMT[C].2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems(PEDG).Aachen,Germany,2015:1-7.
[16]Wu T.Cdv/dt induced turn-on in synchronous buck regulators[C].High Frequency Power Conversion(HFPC).Chicago,USA,1999:115-122.
[17]Ng W T,Trescases O,Wei Guowen.Output stages for integrated DC-DC converters and power ICs[C].2007 IEEE Conference on Electron Devices and Solid-State Circuits.Tainan,Taiwan,China,2007:91-94.
[18]Malcovati P,Maloberti F,Fiocchi C,et al.Curvature-compensated BiCMOS bandgap with 1-V supply voltage[J].IEEEJournal of Solid-State Circuits,2001,36(7):1076-1081.