管式炉中半导体激光器巴条Au80Sn20焊料封装研究
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摘要
为了提高半导体激光器的封装质量和效率,引入管式炉利用夹具进行批量封装。由于封装质量的好坏直接影响半导体激光器的输出特性和使用寿命,利用MOCVD生长808 nm芯片,重点分析了管式炉温度和封装时间对半导体激光器巴条双面金锡封装质量的影响。利用X射线检测、结电压、光电特性参数和smile效应测试手段,确定了管式炉封装半导体激光器巴条的最优封装条件,为以后的产业化提供了指导意义。
In order to improve the packaging quality and efficiency of semiconductor lasers,tube furnaces were introduced into the bulk package using fixtures. Since the quality of the package directly affected the output characteristics and service life of the semiconductor laser,the 808 nm chips were grown by MOCVD,and the influence of the tube furnace temperature and the packaging time on the package quality of the double-sided AuSn packaged semiconductor laser bar was analyzed. Using X-ray detection,junction voltage,photoelectric characteristics parameters and"smile"effect testing methods,the optimal package conditions for the tube furnace package semiconductor laser bars were determined,providing guidance for future industrialization.
In order to improve the packaging quality and efficiency of semiconductor lasers,tube furnaces were introduced into the bulk package using fixtures. Since the quality of the package directly affected the output characteristics and service life of the semiconductor laser,the 808 nm chips were grown by MOCVD,and the influence of the tube furnace temperature and the packaging time on the package quality of the double-sided AuSn packaged semiconductor laser bar was analyzed. Using X-ray detection,junction voltage,photoelectric characteristics parameters and"smile"effect testing methods,the optimal package conditions for the tube furnace package semiconductor laser bars were determined,providing guidance for future industrialization.
引文
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[2]VARMA R,KNIGHT T,GOETZ M,et al..Optimizing solder bonding for high power applications[C].IMAPS 2014Ra MP Workshop and Tabletop Exhibition,San Diego,2014.
[3]马骁宇,王俊,刘素平.国内大功率半导体激光器研究及应用现状[J].红外与激光工程,2008,37(2):189-194.MA X Y,WANG J,LIU S P.Present situation of investigations and applications in high power semiconductor lasers[J].Infrared Laser Eng.,2008,37(2):189-194.(in Chinese)
[4]井红旗,仲莉,倪羽茜,等.高功率密度激光二极管叠层散热结构的热分析[J].发光学报,2016,37(1):81-87.JING H Q,ZHONG L,NI Y X,et al..Thermal analysis of high power density laser diode stack cooling structure[J].Chin.J.Lumin.,2016,37(1):81-87.(in Chinese)
[5]李明月,何君.国外军用大功率半导体激光器的发展现状[J].半导体技术,2015,40(5):321-327.LI M Y,HE J.Development situations of high power semiconductor laser for military applications in advanced countries[J].Semicond.Technol.,2015,40(5):321-327.(in Chinese)
[6]高松信,魏彬,吕文强,等.高功率二极管激光器失效特性研究[J].强激光与粒子束,2005,17(S1):97-100.GAO S X,WEI B,LV W Q,et al..Failure analysis of high power diode laser array[J].High Power Laser Part.Beams,2005,17(S1):97-100.(in Chinese)
[7]何海强.半导体激光器热特性分析研究[D].长春:长春理工大学,2015.HE H Q.Analysis and Research for The Thermal Characteristic of The Semiconductor Laser[D].Changchun:Changchun University of Science and Technology,2015.(in Chinese)
[8]李江,李超,徐昊,等.高功率半导体巴条激光器的热特性分析[J].发光学报,2014,35(12):1474-1479.LI J,LI C,XU H,et al..Thermal analysis of high power semiconductor laser bar[J].Chin.J.Lumin.,2014,35(12):1474-1479.(in Chinese)
[9]LIU X S,ZHAO W,XIONG L L,et al..Packaging of High Power Semiconductor Lasers[M].New York:Springer Science,2015.
[10]HOU D,WANG J W,ZHANG P,et al..High power diode laser stack development using gold-tin bonding technology[C].Proceedings Volume 9346,Components and Packaging for Laser Systems,San Francisco,2015,9346:934604-1-9.
[11]张勇.高功率单管半导体激光器封装技术研究[D].天津:河北工业大学,2014.ZHANG Y.Study on Packaging Technology of High Power Single Emitter Semiconductor Laser[D].Tianjin:Hebei University of Technology,2014.(in Chinese)
[12]王辉.大功率半导体激光器高可靠烧结技术研究[J].半导体技术,2007,32(8):682-684.WANG H.Investigation of high reliability sintering technique for high power semiconductor lasers[J].Semicond.Technol.,2007,32(8):682-684.(in Chinese)
[13]PITTROFF W,ERBERT G,KLEIN A,et al..Mounting of laser bars on copper heat sinks using Au/Sn solder and Cu Wsubmounts[C].Proceedings of The 52nd Electronic Components and Technology Conference,San Diego,2002:276-281.
[14]杨扬,孙素娟,李沛旭,等.烧结温度对Au Sn焊料薄膜及封装激光器性能的影响[J].半导体技术,2015,40(11):840-845.YANG Y,SUN S J,LI P X,et al..Effects of the sintering temperature on the performance of Au Sn solder film and packaged laser[J].Semicond.Technol.,2015,40(11):840-845.(in Chinese)
[15]ARABI F,THOLIER L,MARTINEAU D,et al..Failure mechanism study of gold-tin solder for attaching power electronic devices[C].MEA 2017,Bordeaux,2017.
[16]SHI J W,YAN C L,LI Y F,et al..Analysis on the thermal characteristics of quantum cascade laser[C].International Conference on Optoelectronics and Microelectronics,Changchun,2015:52-54.
[17]LI X M,WANG J W,FENG F F,et al..Effects of packaging on the performances of high brightness 9xx nm CW mini-bar diode lasers[C].Proceedings of SPIE 9346,Components and Packaging for Laser Systems,San Francisco,2015,9346:93460C-1-8.
[18]王祥鹏,李再金,刘云,等.半导体激光器列阵的smile效应与封装技术[J].光学精密工程,2010,18(3):552-557.WANG X P,LI Z J,LIU Y,et al..Smile effect and package technique for diode laser arrays[J].Opt.Precision Eng.,2010,18(3):552-557.(in Chinese)
[19]郭林辉.大功率二极管激光线阵封装中的应力检测方法研究[D].长春:长春理工大学,2009.GUO L H.Study on Measurement of Packaging-induced Stress in High-power Diode Laser Arrays[D].Changchun:Changchun University of Science and Technology,2009.(in Chinese)
[20]陈华,李静,周兴林,等.封装热应力致半导体激光器“Smile”效应的抑制方法[J].发光学报,2017,38(5):655-661.CHEN H,LI J,ZHOU X L,et al..Measures to reduce smile effect of semiconductor laser diode arrays caused by packaging thermal stress[J].Chin.J.Lumin.,2017,38(5):655-661.(in Chinese)
[21]TALBOT C L,FRIESE M E J,WANG D,et al..Line width reduction in a large-smile laser diode array[J].Appl.Opt.,2005,44(29):6264-6268.
[22]郎超.“Smile”效应对半导体激光器列阵光束质量影响的研究[D].北京:北京工业大学,2012.LANG C.Study of How“Smile”Effect on The Beam Quality of Diode Laser Array[D].Beijing:Beijing University of Technology,2012.(in Chinese)
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