锥形半导体激光器研究进展
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摘要
锥形半导体激光器具有高功率、高光束质量等特点,因此受到广泛关注并成为研究热点。从3种结构(传统结构、分布式布拉格反射(DBR)结构、侧向光栅条纹结构)的锥形半导体激光器出发,对国内外近十年具有代表性研究成果进行综述,介绍其理论研究和实验进展,并对锥形半导体激光器的未来发展进行展望。
Tapered semiconductor lasers are characterized by high power and high beam quality. As a result,they have attracted much attention and have become a widely researched topic. This review focuses on the three main structures of tapered semiconductor diode lasers: the traditional structure,the distributed Bragg reflector( DBR) structure and the lateral grating structure. This paper summarizes the results of domestical and international representative research from the past ten years,introduces its theoretical research and experimental progress,and predicts the future development of tapered semiconductor lasers.
Tapered semiconductor lasers are characterized by high power and high beam quality. As a result,they have attracted much attention and have become a widely researched topic. This review focuses on the three main structures of tapered semiconductor diode lasers: the traditional structure,the distributed Bragg reflector( DBR) structure and the lateral grating structure. This paper summarizes the results of domestical and international representative research from the past ten years,introduces its theoretical research and experimental progress,and predicts the future development of tapered semiconductor lasers.
引文
[1]刘友强,曹银花,李景,等.激光加工用5 k W光纤耦合半导体激光器[J].光学精密工程,2015,23(5):1279-1287.LIU Y Q,CAO Y H,LI J,et al..5 k W fiber coupling diode laser for laser processing[J].Opt.Precision Eng.,2015,23(5):1279-1287.(in Chinese)
[2]张建,宁永强,张建伟,等.微型铷原子钟专用795 nm垂直腔表面发射激光器[J].光学精密工程,2014,22(1):50-57.ZHANG J,NING Y Q,ZHANG J W,et al..795 nm VCSELs for 87Rb based miniaturized atomic clock[J].Opt.Precision Eng.,2014,22(1):50-57.(in Chinese)
[3]徐华伟,宁永强,曾玉刚,等.852 nm半导体激光器量子阱设计与外延生长[J].光学精密工程,2013,21(3):590-597.XU H W,NING Y Q,ZENG Y G,et al..Design and epitaxial growth of quantum-well for 852 nm laser diode[J].Opt.Precision Eng.,2013,21(3):590-597.(in Chinese)
[4]ZHANG Z,ZHENG H,TIAN Y,et al..Stable scanning of dressing fields on multiwave mixing in optical ring cavity[J].Quantum Electronics of IEEE Journal,2014,50(7):575-580.
[5]吴涛,郭栓银.980 nm高功率锥形激光器巴条的制备及光电特性[J].激光与光电子学展,2016(4):138-143.WU T,GUO SH Y.Fabrication and electro-optic properties of 980 nm high-power tapered laser bar[J].Laser&Optoelectronics Progress,2016(4):138-143.(in Chinese)
[6]SUMP B,KLEHR A,VU T N,et al..975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications[C].Proc.SPIE 9382,Novel In-Plane Semiconductor Lasers XIV,2015:93821k.
[7]CHRISTENSEN M,HANSEN A K,NOORDEGRAAF D,et al..Modulation of frequency doubled DFB-tapered diode lasers for medical treatment[C].Proc.SPIE 10088,Nonlinear Frequency Generation and Conversion:Materials and Devices XVI,2017:100881A.
[8]TIMMERMANN A,MEINSCHIEN J,BARTOSCHEWSKI D.Next generation high-brightness diode lasers offer new industrial applications[C].Proc.SPIE 6876,High Power Diode Laser Technology and Applications VI,2008:68760U.
[9]HANSEN A K,TAWFIEQ M,JENSEN O B,et al..Concept for power scaling second harmonic generation using a cascade of nonlinear crystals[J].Optics Express,2015,23(12):15921-15934.
[10]李景,邱运涛,曹银花,等.高亮度锥形半导体激光器[J].发光学报,2016,37(8):990-995.LI J,QIU Y T,CAO Y H,et al..High brightness tapered diode laser[J].Chinese Journal of Luminescence,2016,37(8):990-995.(in Chinese)
[11]杨晔,刘云,秦莉,等.850 nm高亮度锥形半导体激光器的光电特性[J].发光学报,2011,32(6):593-597.YANG Y,LIU Y,QIN L,et al..Electro-optic properties of 850nm high-brightness tapered lasers[J].Chinese Journal of Luminescence,2011,32(6):593-597.(in Chinese)
[12]黄海华,刘云,杨晔,等.850 nm锥形半导体激光器的温度特性[J].中国光学,2013,6(2):201-207.HUANG H H,LIU Y,YANG Y,et al..Temperature characteristics of 850 nm tapered semiconductor lasers[J].Chinese Optics,2013,6(2):201-207.(in Chinese)
[13]李璟,刘媛媛,马骁宇.电极分离的980 nm锥形激光器的研制[J].半导体学报,2007,28(8):1302-1306.LI J,LIU Y Y,MA X Y.High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J].Chinese Journal of Semiconductors,2007,28(8):1302-1306.(in Chinese)
[14]ADAMIEC P,SUMPF B,FEISE D,et al..Twin-contact 645-nm tapered laser with 500-mW output power[J].IEEE Photonics Technology Letters,2009,21(4):236-238.
[15]MICHEL N,ODRIOZOLA H,KWOK C H,et al..High modulation efficiency and high power 1 060 nm tapered lasers with separate contacts[J].Electronics Letters,2009,45(2):103-104.
[16]WALTHER M,KIEFER R.Improved beam quality for high-power tapered laser diodes with LMG(low-modal-gain)epitaxial layer structures[C].Proc.SPIE 3284,In-Plane Semiconductor Lasers:from Ultraviolet to Mid-Infrared II,1998:72-79.
[17]DITTMAR F,SUMPF B,FRICKE J,et al..High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2=1.9 at P=4.4 W[J].IEEE Photonics Technology Letters,2006,18(4):601-603.
[18]TIJERO J M G,ODRIOZOLA H,BORRUEL L,et al..Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J].IEEE Photonics Technology Letters,2007,19(20):1640-1642.
[19]KRAKOWSKI M M,AUZANNEAU S C,CALLIGARO M,et al..High-power and high-brightness laser diode structures at980 nm using Al-free materials[C].Proc.SPIE 4651,Novel In-Plane Semiconductor Lasers,2002:80-91.
[20]GUO R,ZHENG J,ZHANG Y,et al..Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers[J].Science Bulletin,2015,60(11):1026-1032.
[21]MA X,QU H,ZHAO P,et al..980 nm tapered lasers with photonic crystal structure for low vertical divergence[C].Proc.SPIE 10019,Optoelectronic Devices and Integration VI,2016:1001907.
[22]周旭彦,赵少宇,马晓龙,等.低垂直发散角高亮度光子晶体半导体激光器[J].中国激光,2017,44(2):0201010.ZHOU X Y,ZHAO SH Y,MA X L,et al..Low vertical divergence angle and high brightness photonic crystal semiconductor laser[J].Chinese Journal of Laser,2017,44(2):0201010.(in Chinese)
[23]HUANG S S,ZHANG Y,LIAO Y P,et al..High-power single-spatial-mode gasb tapered laser around 2.0μm with very small lateral beam divergence[J].Chinese Physics Letters,2017,34(8):084202.
[24]LI Y,WANG J,YANG N,et al..The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers[J].Optics Express,2013,21(13):15998-16006.
[25]徐天鸿,姚辰,万文坚,等.锥形太赫兹量子级联激光器输出功率与光束特性研究[J].物理学报,2015,64(22):224212.XU T H,YAO CH,WAN W J,et al..Analyses of the output power and beam quality of the tapered terahertz quantum cascade lasers[J].Acta Physica Sinica,2015,64(22):24212.(in Chinese)
[26]KAUNGA-NYIRENDA S N,BULL S,LIM J J,et al..Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating[J].IET Optoelectronics,2014,8(2):99-107.
[27]FRICKE J,WENZEL H,MATALLA M,et al..980-nm DBR lasers using higher order gratings defined by i-line lithography[J].Semiconductor Science&Technology,2005,20(11):1149-1152.
[28]HASLER K H,SUMPF B,ADAMIEC P,et al..5-w DBR tapered lasers emitting at 1 060 nm with a narrow spectral linewidth and a nearly diffraction-limited beam quality[J].IEEE Photonics Technology Letters,2008,20(19):1648-1650.
[29]SUMPF B,ADAMIEC P,FRICKE J,et al..1 060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality[C].Proc.SPIE 7230,Novel In-Plane Semiconductor Laser VIII,2009:72301E.
[30]MLLER A,FRICKE J,BUGGE F,et al..DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited,narrowband emission at 1 030 nm[J].Applied Physics B,2016,122(4):87.
[31]MLLER A,ZINK C,FRICKE J,et al..1 030 nm DBR tapered diode laser with up to 16 W of optical output power[C].Proc.SPIE 10123,Novel In-Plane Semiconductor Lasers XVI,2017:101231B.
[32]MLLER A,FRICKE J,BROX O,et al..Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides[J].Semiconductor Science&Technology,2016,31(12):125011.
[33]PASCHKE K,BLUME G,BROX O,et al..Watt-level continuous-wave diode lasers at 1 180 nm with high spectral brightness[C].Proc.SPIE 9348,High-Power Diode Laser Technology and Applications XIII,2015:93480X.
[34]VIHERI L J,KEL J M,AHO A,et al..High-power 1 550 nm tapered DBR lasers fabricated using soft UV-nanoimprint lithography[C].Proc.SPIE 9733,High-Power Diode Laser Technology and Applications XIV,2016:97330Q.
[35]LIU L,QU H W,WANG Y F,et al..High-brightness single-mode double-tapered laser diodes with laterally coupled highorder surface grating[J].Optics Letters,2014,39(11):3231-3234.
[36]YAO C,XU T H,WAN W J,et al..Single-mode tapered terahertz quantum cascade lasers with lateral gratings[J].SolidState Electronics,2016,122:52-55.
[37]YEO C I,JANG S J,YU J S,et al..1.3μm laterally tapered ridge waveguide dfb lasers with second-order cr surface gratings[J].IEEE Photonics Technology Letters,2010,22(22):1668-1670.
[38]BECKER S,SCHEUERMANN J,WEIH R,et al..Laterally coupled DFB interband cascade laser with tapered ridge[J].Electronics Letters,2017,53(11):747-748.
[39]WEIH R,NAHLE L,HOFLING S,et al..Single mode interband cascade lasers based on lateral metal gratings[J].Applied Physics Letters,2014,105(7):071111.
[40]JIA Z W,WANG L J,TAN S,et al..Improvement of buried grating DFB quantum cascade lasers by small-angle tapered structure[J].IEEE Photonics Technology Letters,2017,29(10):783-785.
[2]张建,宁永强,张建伟,等.微型铷原子钟专用795 nm垂直腔表面发射激光器[J].光学精密工程,2014,22(1):50-57.ZHANG J,NING Y Q,ZHANG J W,et al..795 nm VCSELs for 87Rb based miniaturized atomic clock[J].Opt.Precision Eng.,2014,22(1):50-57.(in Chinese)
[3]徐华伟,宁永强,曾玉刚,等.852 nm半导体激光器量子阱设计与外延生长[J].光学精密工程,2013,21(3):590-597.XU H W,NING Y Q,ZENG Y G,et al..Design and epitaxial growth of quantum-well for 852 nm laser diode[J].Opt.Precision Eng.,2013,21(3):590-597.(in Chinese)
[4]ZHANG Z,ZHENG H,TIAN Y,et al..Stable scanning of dressing fields on multiwave mixing in optical ring cavity[J].Quantum Electronics of IEEE Journal,2014,50(7):575-580.
[5]吴涛,郭栓银.980 nm高功率锥形激光器巴条的制备及光电特性[J].激光与光电子学展,2016(4):138-143.WU T,GUO SH Y.Fabrication and electro-optic properties of 980 nm high-power tapered laser bar[J].Laser&Optoelectronics Progress,2016(4):138-143.(in Chinese)
[6]SUMP B,KLEHR A,VU T N,et al..975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications[C].Proc.SPIE 9382,Novel In-Plane Semiconductor Lasers XIV,2015:93821k.
[7]CHRISTENSEN M,HANSEN A K,NOORDEGRAAF D,et al..Modulation of frequency doubled DFB-tapered diode lasers for medical treatment[C].Proc.SPIE 10088,Nonlinear Frequency Generation and Conversion:Materials and Devices XVI,2017:100881A.
[8]TIMMERMANN A,MEINSCHIEN J,BARTOSCHEWSKI D.Next generation high-brightness diode lasers offer new industrial applications[C].Proc.SPIE 6876,High Power Diode Laser Technology and Applications VI,2008:68760U.
[9]HANSEN A K,TAWFIEQ M,JENSEN O B,et al..Concept for power scaling second harmonic generation using a cascade of nonlinear crystals[J].Optics Express,2015,23(12):15921-15934.
[10]李景,邱运涛,曹银花,等.高亮度锥形半导体激光器[J].发光学报,2016,37(8):990-995.LI J,QIU Y T,CAO Y H,et al..High brightness tapered diode laser[J].Chinese Journal of Luminescence,2016,37(8):990-995.(in Chinese)
[11]杨晔,刘云,秦莉,等.850 nm高亮度锥形半导体激光器的光电特性[J].发光学报,2011,32(6):593-597.YANG Y,LIU Y,QIN L,et al..Electro-optic properties of 850nm high-brightness tapered lasers[J].Chinese Journal of Luminescence,2011,32(6):593-597.(in Chinese)
[12]黄海华,刘云,杨晔,等.850 nm锥形半导体激光器的温度特性[J].中国光学,2013,6(2):201-207.HUANG H H,LIU Y,YANG Y,et al..Temperature characteristics of 850 nm tapered semiconductor lasers[J].Chinese Optics,2013,6(2):201-207.(in Chinese)
[13]李璟,刘媛媛,马骁宇.电极分离的980 nm锥形激光器的研制[J].半导体学报,2007,28(8):1302-1306.LI J,LIU Y Y,MA X Y.High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J].Chinese Journal of Semiconductors,2007,28(8):1302-1306.(in Chinese)
[14]ADAMIEC P,SUMPF B,FEISE D,et al..Twin-contact 645-nm tapered laser with 500-mW output power[J].IEEE Photonics Technology Letters,2009,21(4):236-238.
[15]MICHEL N,ODRIOZOLA H,KWOK C H,et al..High modulation efficiency and high power 1 060 nm tapered lasers with separate contacts[J].Electronics Letters,2009,45(2):103-104.
[16]WALTHER M,KIEFER R.Improved beam quality for high-power tapered laser diodes with LMG(low-modal-gain)epitaxial layer structures[C].Proc.SPIE 3284,In-Plane Semiconductor Lasers:from Ultraviolet to Mid-Infrared II,1998:72-79.
[17]DITTMAR F,SUMPF B,FRICKE J,et al..High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2=1.9 at P=4.4 W[J].IEEE Photonics Technology Letters,2006,18(4):601-603.
[18]TIJERO J M G,ODRIOZOLA H,BORRUEL L,et al..Enhanced brightness of tapered laser diodes based on an asymmetric epitaxial design[J].IEEE Photonics Technology Letters,2007,19(20):1640-1642.
[19]KRAKOWSKI M M,AUZANNEAU S C,CALLIGARO M,et al..High-power and high-brightness laser diode structures at980 nm using Al-free materials[C].Proc.SPIE 4651,Novel In-Plane Semiconductor Lasers,2002:80-91.
[20]GUO R,ZHENG J,ZHANG Y,et al..Suppressing longitudinal spatial hole burning with dual assisted phase shifts in pitch-modulated DFB lasers[J].Science Bulletin,2015,60(11):1026-1032.
[21]MA X,QU H,ZHAO P,et al..980 nm tapered lasers with photonic crystal structure for low vertical divergence[C].Proc.SPIE 10019,Optoelectronic Devices and Integration VI,2016:1001907.
[22]周旭彦,赵少宇,马晓龙,等.低垂直发散角高亮度光子晶体半导体激光器[J].中国激光,2017,44(2):0201010.ZHOU X Y,ZHAO SH Y,MA X L,et al..Low vertical divergence angle and high brightness photonic crystal semiconductor laser[J].Chinese Journal of Laser,2017,44(2):0201010.(in Chinese)
[23]HUANG S S,ZHANG Y,LIAO Y P,et al..High-power single-spatial-mode gasb tapered laser around 2.0μm with very small lateral beam divergence[J].Chinese Physics Letters,2017,34(8):084202.
[24]LI Y,WANG J,YANG N,et al..The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers[J].Optics Express,2013,21(13):15998-16006.
[25]徐天鸿,姚辰,万文坚,等.锥形太赫兹量子级联激光器输出功率与光束特性研究[J].物理学报,2015,64(22):224212.XU T H,YAO CH,WAN W J,et al..Analyses of the output power and beam quality of the tapered terahertz quantum cascade lasers[J].Acta Physica Sinica,2015,64(22):24212.(in Chinese)
[26]KAUNGA-NYIRENDA S N,BULL S,LIM J J,et al..Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heating[J].IET Optoelectronics,2014,8(2):99-107.
[27]FRICKE J,WENZEL H,MATALLA M,et al..980-nm DBR lasers using higher order gratings defined by i-line lithography[J].Semiconductor Science&Technology,2005,20(11):1149-1152.
[28]HASLER K H,SUMPF B,ADAMIEC P,et al..5-w DBR tapered lasers emitting at 1 060 nm with a narrow spectral linewidth and a nearly diffraction-limited beam quality[J].IEEE Photonics Technology Letters,2008,20(19):1648-1650.
[29]SUMPF B,ADAMIEC P,FRICKE J,et al..1 060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality[C].Proc.SPIE 7230,Novel In-Plane Semiconductor Laser VIII,2009:72301E.
[30]MLLER A,FRICKE J,BUGGE F,et al..DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited,narrowband emission at 1 030 nm[J].Applied Physics B,2016,122(4):87.
[31]MLLER A,ZINK C,FRICKE J,et al..1 030 nm DBR tapered diode laser with up to 16 W of optical output power[C].Proc.SPIE 10123,Novel In-Plane Semiconductor Lasers XVI,2017:101231B.
[32]MLLER A,FRICKE J,BROX O,et al..Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides[J].Semiconductor Science&Technology,2016,31(12):125011.
[33]PASCHKE K,BLUME G,BROX O,et al..Watt-level continuous-wave diode lasers at 1 180 nm with high spectral brightness[C].Proc.SPIE 9348,High-Power Diode Laser Technology and Applications XIII,2015:93480X.
[34]VIHERI L J,KEL J M,AHO A,et al..High-power 1 550 nm tapered DBR lasers fabricated using soft UV-nanoimprint lithography[C].Proc.SPIE 9733,High-Power Diode Laser Technology and Applications XIV,2016:97330Q.
[35]LIU L,QU H W,WANG Y F,et al..High-brightness single-mode double-tapered laser diodes with laterally coupled highorder surface grating[J].Optics Letters,2014,39(11):3231-3234.
[36]YAO C,XU T H,WAN W J,et al..Single-mode tapered terahertz quantum cascade lasers with lateral gratings[J].SolidState Electronics,2016,122:52-55.
[37]YEO C I,JANG S J,YU J S,et al..1.3μm laterally tapered ridge waveguide dfb lasers with second-order cr surface gratings[J].IEEE Photonics Technology Letters,2010,22(22):1668-1670.
[38]BECKER S,SCHEUERMANN J,WEIH R,et al..Laterally coupled DFB interband cascade laser with tapered ridge[J].Electronics Letters,2017,53(11):747-748.
[39]WEIH R,NAHLE L,HOFLING S,et al..Single mode interband cascade lasers based on lateral metal gratings[J].Applied Physics Letters,2014,105(7):071111.
[40]JIA Z W,WANG L J,TAN S,et al..Improvement of buried grating DFB quantum cascade lasers by small-angle tapered structure[J].IEEE Photonics Technology Letters,2017,29(10):783-785.
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