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镀钯铜丝芯片键合工艺控制和可靠性研究
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  • 英文篇名:Process Control and Reliability Research of Pd-Plated Cu Wire Bonding
  • 作者:吴建忠 ; 李金刚 ; 周巍
  • 英文作者:Wu Jianzhong,Li Jingang,Zhou Wei,(Wuxi Resources Micro-Assembly Technology Co.,Ltd.,Wuxi 214028,China)
  • 关键词:镀钯铜丝 ; 集成电路 ; 铜丝键合 ; 芯片弹坑 ; 可靠性
  • 英文关键词:Pd-plated Cu wire;integrated circuit;Cu wire bonding;chip crater;reliability
  • 中文刊名:BDTJ
  • 英文刊名:Semiconductor Technology
  • 机构:无锡华润安盛科技有限公司;
  • 出版日期:2013-05-03
  • 出版单位:半导体技术
  • 年:2013
  • 期:v.38;No.297
  • 语种:中文;
  • 页:BDTJ201305017
  • 页数:7
  • CN:05
  • ISSN:13-1109/TN
  • 分类号:79-85
摘要
随着金价的不断上升,集成电路封装成本越来越高。为此,集成电路封装厂商纷纷推出铜线键合来取代金丝键合,以缓解封装成本压力。但是纯铜丝非常容易氧化,为了提高键合生产效率及产品可靠性,目前封装厂商主要采用镀钯铜丝作为键合丝。对集成电路镀钯铜丝键合生产技术和工艺控制方法进行了探讨,并和金丝及纯铜丝工艺控制进行了比较分析。对镀钯铜丝键合工艺主要失效模式进行了介绍和说明,并就弹坑检测试验方法进行了比较分析和总结。特别是对特殊产品的弹坑检测试验如何才能确保结果准确,进行了实例分析。
        With the rising price of gold,the cost of IC packaging becomes higher and higher.In order to cut down the cost,IC packaging manufacturers introduced copper wire bonding to replace gold wire bonding.In order to improve the bonding production efficiency and reliability,packaging manufacturers usually use Pd-plated copper wire instead of pure copper wire,which is easily to be oxidized.The IC Pd-plated copper wire bonding production and process control were discussed.Moreover the characteristics and process control of Pb-plated copper wire,copper wire and gold wire were compared.The major failure mode of Pd-plated copper wire bonding was described,and the detail crater test methods,especially the way to ensure accurate results,were also analyzed with examples.
引文
[1]康菲菲,杨国祥,孔建稳,等.镀钯键合铜丝的发展趋势[J].材料导报,2011,25(21):104-107.
    [2]鲁凯,任春岭,高娜燕,等.铜丝球键合工艺及可靠性机理[J].电子与封装,2010,10(2):1-6.
    [3]徐慧,杭春进,王春青,等.金、铜丝球键合焊点的可靠性对比研究[J].电子工业专用设,2006,136(5):23-27.
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