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Al和S共掺杂金红石型TiO_2第一性原理研究
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  • 英文篇名:First-principles of Al/S co-doped rutile TiO_2
  • 作者:李森林 ; 黄金亮 ; 宁向梅 ; 陈永超 ; 师清奎
  • 英文作者:Li Senlin;Huang Jinliang;Ning Xiangmei;Chen Yongchao;Shi Qingkui;School of Materials Science and Engineering,Henan University of Science and Technology;
  • 关键词:金红石TiO_2 ; 第一性原理 ; Al-S共掺杂 ; 密度泛函理论
  • 英文关键词:rutile TiO_2;;first principles;;Al/S-doping;;density function theory
  • 中文刊名:HGXC
  • 英文刊名:New Chemical Materials
  • 机构:河南科技大学材料科学与工程学院;
  • 出版日期:2019-05-15
  • 出版单位:化工新型材料
  • 年:2019
  • 期:v.47;No.560
  • 基金:河南省自然科学基金(162300410088)
  • 语种:中文;
  • 页:HGXC201905037
  • 页数:5
  • CN:05
  • ISSN:11-2357/TQ
  • 分类号:162-165+169
摘要
利用密度泛函理论体系下的第一性原理平面波超软赝势法,研究Al单掺杂和S单掺杂以及Al/S共掺杂金红石相TiO_2的能带结构、态密度和光学性质。结果表明:Al单掺杂导致禁带宽度减小为1.79eV,并且在价带上方形成了一条杂质能带;S单掺杂导致费米能级上移靠近导带,直接带隙减小为0.816eV;Al/S共掺杂导致能带结构中出现了3条杂质能带,直接带隙约0.841eV,杂质能级主要由Al原子的3p轨道和S原子的3p轨道组成。Al/S共掺杂后使TiO_2的吸收带产生红移,在可见光区具有较大的吸收系数,能够增强电子传输能力和抑制电子空穴对复合。
        The electronic structure and optical properties of Al doped,S doped and Al-S co-doped rutile TiO_2 were studied by using plane wave pseudo potential method of first-principles based on density functional theory.The results showed that Al doping leaded to the width of gap decreased to 1.79 eV,and the valence band was formed with a S doped impurity.The Fermi level shifted near the conduction band,the direct band gap was reduced to 0.816 eV.Al and S Co-doped leaded band structure appeared in the band three impurities,the direct band was reduced to 0.841 eV,the impurity level was mainly composed of Al 3 p orbital and S 3 p orbital.Mn-S co-doped TiO_2 leaded to a red shift of TiO_2 absorption band,and the greater absorption coefficient in visible region,and enhanced electron transport capacity,and suppressed electron hole pair compound.
引文
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