CCD与CMOS像素传感器γ射线电离辐射响应特性对比研究
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摘要
为了研究CCD与CMOS像素传感器对γ射线电离辐射的响应差异,对比研究了4类像素传感器的结构特点和辐射响应特性。通过辐射实验,对各传感器在不同辐射水平条件下的光子响应事件分布、平均灰度值以及典型光子响应事件进行研究。研究结果表明:光子响应程度均与辐射剂量率相关;CCD像素传感器的沟道传输方式使每列像元间的辐射响应更容易相互干扰;平均灰度值随剂量率的增大存在明显的梯度,各积分周期内输出信号灰度值围绕均值上下波动,CCD像素传感器输出信号灰度浮动范围较小;CMOS像素传感器各像元对光子的响应更加明显,CCD像素传感器各像元的响应信号易与相邻像元发生串扰;各类像素传感器典型辐射响应事件区域中发生光子响应的像元数量随剂量率的增大而增多,响应事件并非单个光子的行为,而是反映了多个光子在区域内同时沉积能量的过程。本研究为开发像素传感器的γ射线辐射探测技术和应用提供了重要的理论分析和实验数据支撑。
Study on ionizing radiation response characteristics of four types of CCD and CMOS pixel image sensors were presented. The photon response event distribution,average pixel value and typical photon radiation response events of sensors were analyzed by comparing the structural characteristics of various pixel sensors at different dose rates. The reasons for the ionizing radiation response difference were further discussed. The experimental results show that the degree of photon response is related to the radiation dose rate. The channel transmission mode of CCD pixel sensor makes the radiation response of each pixel easier to interfere with each other. The average pixel value has obvious gradient with the different dose rates. The output signal fluctuates around the mean pixel value,and the fluctuation range of CCD pixel sensors are smaller. The response of each pixel of CMOS pixel sensor to photon is more obvious. The signal produced by the majority of pixels to the photon is drowned by the crosstalk signals caused by the neighboring pixels in CCD pixel sensors. The number of pixels corresponding to photon response in the typical radiation response region of each pixelsensor increases with large dose rate,which indicates that the response event is not the behavior of any single photon,but reflects the process of simultaneous deposition of energy by multiple photons in the region.
Study on ionizing radiation response characteristics of four types of CCD and CMOS pixel image sensors were presented. The photon response event distribution,average pixel value and typical photon radiation response events of sensors were analyzed by comparing the structural characteristics of various pixel sensors at different dose rates. The reasons for the ionizing radiation response difference were further discussed. The experimental results show that the degree of photon response is related to the radiation dose rate. The channel transmission mode of CCD pixel sensor makes the radiation response of each pixel easier to interfere with each other. The average pixel value has obvious gradient with the different dose rates. The output signal fluctuates around the mean pixel value,and the fluctuation range of CCD pixel sensors are smaller. The response of each pixel of CMOS pixel sensor to photon is more obvious. The signal produced by the majority of pixels to the photon is drowned by the crosstalk signals caused by the neighboring pixels in CCD pixel sensors. The number of pixels corresponding to photon response in the typical radiation response region of each pixelsensor increases with large dose rate,which indicates that the response event is not the behavior of any single photon,but reflects the process of simultaneous deposition of energy by multiple photons in the region.
引文
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[30]TITH S.Measurement of gamma-rays using smartphones[J].Open J.Appl.Sci.,2016,6(1):31-37.
[31]PREZ M,LIPOVETZKY J,HARO M S,et al..Particle detection and classification using commercial off the shelf CMOS image sensors[J].Nucl.Instrum.Methods Phys.Res.,2016,827:171-180.
[32]COGLIATI JJ,DERR K W,WHARTON J.Using CMOS sensors in a cellphone for gamma detection and classification[J].Eprint Ar Xiv,2014:1401.0766-1-26.
[33]PREZ M,HARO M S,SIDELNIK I,et al..Commercial CMOS pixel array for beta and gamma radiation particle counting[C].Micro-Nanoelectronics,Technology and Applications(EAMTA),2015 Argentine School of IEEE,Villa Maria,Argentina,2015:11-16.
[34]魏清阳,王振鹏,戴甜甜,等.基于静态场景下不遮光CMOS摄像头的核辐射探测[J].原子能科学技术,2017,51(1):175-179.WEI Q Y,WANG Z P,DAI T T,et al..Nuclear radiation detection based on un-covered CMOS camera under static scene[J].Atom.Energy Sci.Technol.,2017,51(1):175-179.(in Chinese)
[2]王旭东,叶玉堂.CMOS与CCD图像传感器的比较研究和发展趋势[J].电子设计工程,2010,18(11):178-181.WANG X D,YE Y T.Comparative research and future tendency between CMOS and CCD image sensor[J].Electron.Design Eng.,2010,18(11):178-181.(in Chinese)
[3]VIRMONTOIS C,GOIFFON V,ROBBINS M S,et al..Dark current random telegraph signals in solid-state image sensors[J].IEEE Trans.Nucl.Sci.,2013,60(6):4323-4331.
[4]GOIFFON V,ESTRIBEAU M,MICHELOT J,et al..Pixel level characterization of pinned photodiode and transfer gate physical parameters in CMOS image sensors[J].IEEE J.Electron Dev.Soc.,2014,2(4):65-76.
[5]NFRDI G,CZIFRUS S,KOCSIS G,et al..Analysis of dark current images of a CMOS camera during gamma irradiation[J].Fusion Eng.Design,2013,88(12):3169-3175.
[6]张为开.CMOS图像传感器电子和质子辐照效应研究[D].哈尔滨:哈尔滨工业大学,2013.ZHANG W K.Electron and Proton Irradiation Effects on CMOS Image Sensor[D].Harbin:Harbin Institute of Technology,2013.(in Chinese)
[7]汪波,李豫东,郭旗,等.60Co-γ射线辐照CMOS有源像素传感器诱发暗信号退化的机理研究[J].物理学报,2014,63(5):56102.WANG B,LI Y D,GUO Q,et al..Research on dark signal degradation in60Coγ-ray-irradiated CMOS active pixel sensor[J].Acta Phys.Sinica,2014,63(5):56102.(in Chinese)
[8]汪波,李豫东,郭旗,等.0.5μm工艺CMOS有源像素传感器的总剂量辐射效应[J].发光学报,2015,36(2):242-248.WANG B,LI Y D,GUO Q,et al..Total dose effects in 0.5μm CMOS active pixel image sensor[J].Chin.J.Lumin.,2015,36(2):242-248.(in Chinese)
[9]王帆,李豫东,郭旗,等.基于4晶体管像素结构的互补金属氧化物半导体图像传感器总剂量辐射效应研究[J].物理学报,2016,65(2):176-181.WANG F,LI Y D,GUO Q,et al..Total ionizing dose radiation effects in four-transistor complementary metal oxide semiconductor image sensors[J].Acta Phys.Sinica,2016,65(2):176-181.(in Chinese)
[10]王祖军,林东生,刘敏波,等.CMOS有源像素图像传感器的辐照损伤效应[J].半导体光电,2014,35(6):945-950.WANG Z J,LIN D S,LIU M B,et al..Radiation damage effects on the CMOS active pixel sensors[J].Semicond.Optoelectron.,2014,35(6):945-950.(in Chinese)
[11]WANG Z,MA W,HUANG S,et al..Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors[J].AIP Adv.,2016,6(3):77108.
[12]WANG Z,MA Y,LIU J,et al..Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates[J].Nucl.Instrum.Methods Phys.Res.,2016,820:89-94.
[13]徐守龙,邹树梁,武钊,等.多类图像传感器模组电离辐射损伤对比研究[J].原子能科学技术,2016,50(11):2092-2100.XU S L,ZOU S L,WU Z,et al..Comparative study on ionizing radiation damage of different types of image sensor modules[J].Atom.Energy Sci.Technol.,2016,50(11):2092-2100.(in Chinese)
[14]XU S L,ZOU S L.Total-ionizing-dose effects in pixel performance degradation of CMOS image sensors under low dose rate[C].23rd International Conference on Nuclear Engineering:Nuclear Power-Reliable Global Energy,American Society of Mechanical Engineers,Chiba,Japan,2015.
[15]徐守龙,邹树梁,黄有骏.γ射线电离辐射对商用CMOS APS性能参数的影响[J].发光学报,2017,38(3):308-315.XU S L,ZOU S L,HUANG Y J.Effect ofγ-ray ionizing radiation on CMOS active pixel sensor[J].Chin.J.Lumin.,2017,38(3):308-315.(in Chinese)
[16]徐守龙,邹树梁,黄有骏,等.核电厂事故工况下监控图像传感器可用性分析与加固[J].核电子学与探测技术,2016,36(6):651-655.XU S L,ZOU S L,HUANG Y J,et al..Availability evaluation and improvement plan of image sensors in accident of nuclear power plant[J].Nucl.Electron.Detect.Technol.,2016,36(6):651-655.(in Chinese)
[17]徐守龙,邹树梁,武钊,等.CIS数字模组作为核辐射环境监控及报警设备的可用性研究[J].核动力工程,2017(1):88-94.XU S L,ZOU S L,WU Z,et al..Research on availability of CIS digital module as monitoring and radiation alarm equipment under condition of nuclear accidents[J].Nucl.Power Eng.,2017(1):88-94.(in Chinese)
[18]XU S L,ZOU S L.Video monitoring system availability in radiation accident condition[C].24th International Conference on Nuclear Engineering,American Society of Mechanical Engineers,Charlotte,USA,2016.
[19]CHECCHIA P,GALEAZZI G,GASPARINI U,et al..Study of a lead glass calorimeter with vacuum phototriode read-out[J].Nucl.Instrum.Methods Phys.Res.,1986,248(2):317-325.
[20]BES'CHASTNOV P M,GOLUBEV V B,PYATA E A,et al..The results of vacuum phototriodes tests[J].Nucl.Instrum.Methods Phys.Res.,1994,342(2):477-482.
[21]ESTRADA J,CEASE H,DIEHL H T,et al..Prospects for a direct dark matter search using high resistivity CCD detectors[J].Physics,2008:0802.2872v3.
[22]AGUILAR-AREVALO A,AMIDEI D,BERTOU X,et al..Measurement of radioactive contamination in the high-resistivity silicon CCDs of the DAMIC experiment[J].Eprint Ar Xiv,2015:1506.06562-1-18.
[23]BLOSTEIN JJ,ESTRADA J,TARTAGLIONE A,et al..Development of a novel neutron detection technique by using a boron layer coating a charge coupled device[J].Eprint Ar Xiv,2014:1408.3263-1-13.
[24]NAKAMURA J.Image Sensors and Signal Processing for Digital Still Cameras[M].New York:CRC Press,2005.
[25]TURCHETTA R,BERST J D,CASADEI B,et al..A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology[J].Nucl.Instrum.Methods Phys.Res.,2001,458(3):677-689.
[26]PAOLUCCI M,BATTISTI D,BIASINI M,et al..A real time active pixel dosimeter for interventional radiology[J].Radiat.Meas.,2011,46(11):1271-1276.
[27]CONTI E,PLACIDI P,BIASINI M,et al..Use of a CMOS image sensor for an active personal dosimeter in interventional radiology[J].IEEE Trans.Instrum.Meas.,2013,62(62):1065-1072.
[28]WHITESON D,MULHEARN M,SHIMMIN C,et al..Searching for ultra-high energy cosmic rays with smartphones[J].Arstropart.Phys.,2016,79:1-9.
[29]KANG H G,SONG JJ,LEE K,et al..An investigation of medical radiation detection using CMOS image sensors in smartphones[J].Nucl.Instrum.Methods Phys.Res.,2016,823:126-134.
[30]TITH S.Measurement of gamma-rays using smartphones[J].Open J.Appl.Sci.,2016,6(1):31-37.
[31]PREZ M,LIPOVETZKY J,HARO M S,et al..Particle detection and classification using commercial off the shelf CMOS image sensors[J].Nucl.Instrum.Methods Phys.Res.,2016,827:171-180.
[32]COGLIATI JJ,DERR K W,WHARTON J.Using CMOS sensors in a cellphone for gamma detection and classification[J].Eprint Ar Xiv,2014:1401.0766-1-26.
[33]PREZ M,HARO M S,SIDELNIK I,et al..Commercial CMOS pixel array for beta and gamma radiation particle counting[C].Micro-Nanoelectronics,Technology and Applications(EAMTA),2015 Argentine School of IEEE,Villa Maria,Argentina,2015:11-16.
[34]魏清阳,王振鹏,戴甜甜,等.基于静态场景下不遮光CMOS摄像头的核辐射探测[J].原子能科学技术,2017,51(1):175-179.WEI Q Y,WANG Z P,DAI T T,et al..Nuclear radiation detection based on un-covered CMOS camera under static scene[J].Atom.Energy Sci.Technol.,2017,51(1):175-179.(in Chinese)