AlGaAs插入层对InAs/AlGaAs/GaAs量子点的尺寸分布影响
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摘要
采用MBE系统,在GaAs(001)表面用S-K模式分别在原子级平坦的GaAs和AlGaAs/GaAs表面沉积3 ML的InAs量子点,利用STM研究了AlGaAs插入层对InAs/GaAs量子点尺寸分布的影响。研究发现,AlGaAs插入层会使InAs/GaAs量子点平均尺寸变小,而尺寸分布变得分散;采用不同的InAs沉积速率生长量子点,发现随着InAs沉积速率的加快,量子点平均尺寸变小,密度增大,尺寸分布更为集中。
3 monolayer InAs quantum dots were deposited on flat GaAs( 001) surface and AlGaAs/GaAs surface respectively in a Stranski-Krastanow model by MBE. The effect of AlGaAs cladding layer on the size distribution of InAs/GaAs quantum dots was studied by using STM. Results show that AlGaAs cladding layer will make the average size of InAs/AlGaAs/GaAs quantum dots decrease and the size distribution more scattered. By adopting InAs quantum dots with different deposition rates,it can be found that with the increase of deposition rate,the average size of quantum dot decreases,the density increases and the size distribution is more concentrated.
3 monolayer InAs quantum dots were deposited on flat GaAs( 001) surface and AlGaAs/GaAs surface respectively in a Stranski-Krastanow model by MBE. The effect of AlGaAs cladding layer on the size distribution of InAs/GaAs quantum dots was studied by using STM. Results show that AlGaAs cladding layer will make the average size of InAs/AlGaAs/GaAs quantum dots decrease and the size distribution more scattered. By adopting InAs quantum dots with different deposition rates,it can be found that with the increase of deposition rate,the average size of quantum dot decreases,the density increases and the size distribution is more concentrated.
引文
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[5]BIETTI S,SOMASCHINI C,SANGUINETTI S.Crystallization kinetics of Ga metallic nano-droplets under As flux[J].Nanotechnology,2013,24(20):205603.1.
[6]MANO T,ABBARCHI M,KURODA T,et al.Ultra-narrow emission from single Ga As self-assembled quantum dots grown by droplet epitaxy[J].Nanotechnology,2009,20(39):395601.1-395601.6.
[7]KIM Y S,LEE U H,LEE D,et al.Energy-level engineering of self-assembled quantum dots by using Al Ga As alloy cladding layers[J].Journal of Applied Physics,2000,87(1):241-244.
[8]SUN M,SIMMONDS P J,LAGHUMAVARAPU R B,et al.Effects of Ga As(Sb)cladding layers on In As/Al As Sb quantum dots[J].Applied Physics Letters,2013,102(2):023107.1-023107.5.
[9]NISHIZAWA T.Thermodynamics of microstructures[M].Asm International,2008.
[10]TANAKA M,SUZUKI T,NISHINAGA T.Surface diffusion of Al atoms on Ga As vicinal surfaces in molecular beam epitaxy[J].Japanese Journal of Applied Physics,1990,29(5A):L706.
[11]周海月,赵振,郭祥,等.Al0.26Ga0.74As/Ga As(001)表面形貌的热力学分析[J].真空科学与技术学报,2016,36(4):477-481.
[12]OHNO H,NAGAHARA L A,GWO S,et al.Nanometer-scale wires of monolayer height alkanethiols on Al Ga As/Ga As heterostructures by selective chemisorption[J].Japanese journal of applied physics,1996,35(4B):L512.
[13]TANAKA M,SUZUKI T,NISHINAGA T.Surface diffusion of Al atoms on Ga As vicinal surfaces in molecular beam epitaxy[J].Japanese Journal of Applied Physics,1990,29(5A):L706.
[14]HOPKINS J,LEYS M R,BRüBACH J,et al.A RHEED study of the dynamics of Ga As and Al Ga As growth on a(001)surface by MBE[J].Applied surface science,1995,84(3):299-307.
[15]BALLET P,SMATHERS J B,YANG H,et al.Control of size and density of In As/(Al,Ga)As self-organized islands[J].Journal of Applied Physics,2001,90(1):481-487.
[16]CAFLISCH R E,WEINAN E,GYURE M F,et al.Kinetic model for a step edge in epitaxial growth[J].Physical Review E,1999,59(6):6879.
[17]JAYAPRAKASH C,ROTTMAN C,SAAM W F.Simple model for crystal shapes:Step-step interactions and facet edges[J].Physical Review B,1984,30(11):6549.
[18]王占国.纳米半导体技术[M].北京:化学工业出版社,2004:183-185.
[19]KODUVELY H M,ZANGWILL A.Epitaxial growth kinetics with interacting coherent islands[J].Physical Review B,1999,60(4):R2204.