电容式MEMS差压压力传感器的设计与制造
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摘要
基于硅-玻璃结构,设计并制造了一种MEMS电容式差压压力传感器,利用由硅MEMS微纳米加工技术制作的硅可动薄膜作为压力的感测电极,利用在Pyrex玻璃上淀积Au薄膜作为固定电极,通过硅-玻璃阳极键合工艺实现硅结构与玻璃的键合。在键合过程中实现Pryex玻璃上的pad与硅可动电极的互联,实现MEMS电容式差压压力传感器功能。所设计的MEMS差压压力传感器的量程范围为0～40kPa,其电容变化范围为5.4～7.3pF,电容变化量率达到了35%。利用二次曲线拟合,满量程误差小于0.4%FS,可满足大部分应用场合的需求。
A MEMS capacitive differential pressure sensor with a silicon-glass structure is designed and manufactured. A silicon movable film made by silicon MEMS micro/nano processing technology is used as a pressure sensing electrode, an Au film deposited on Pyrex glass as a fixed electrode, and silicon structure and glass are bonded through a silicon-glass anodic bonding process. During the bonding process, the pad on the Pryex glass and the silicon movable electrode are interconnected to realize the function of MEMS capacitive differential pressure sensor. The range of the designed MEMS differential pressure sensor is 0～40 kPa, its capacitance variation range is 5.4 ～7.3 pF, and the capacitance variation rate reaches 35%. Using quadratic curve fitting, the full-scale error is less than 0.4%FS, which can meet the needs of most applications.
A MEMS capacitive differential pressure sensor with a silicon-glass structure is designed and manufactured. A silicon movable film made by silicon MEMS micro/nano processing technology is used as a pressure sensing electrode, an Au film deposited on Pyrex glass as a fixed electrode, and silicon structure and glass are bonded through a silicon-glass anodic bonding process. During the bonding process, the pad on the Pryex glass and the silicon movable electrode are interconnected to realize the function of MEMS capacitive differential pressure sensor. The range of the designed MEMS differential pressure sensor is 0～40 kPa, its capacitance variation range is 5.4 ～7.3 pF, and the capacitance variation rate reaches 35%. Using quadratic curve fitting, the full-scale error is less than 0.4%FS, which can meet the needs of most applications.
引文
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[7]CHANDRA S,TIWARI R,PARTHIBAN C.A novel technique for fabrication of MEMS based capacitive pressure sensor using press-on-contact in anodic bonding[C]//2014 Symposium on Design,Test,Integration and Packaging of MEMS/MOEMS(DTIP),March 1-4,2014,Cannes,France.EDA Publishing/DTIP,2014:165-169.
[8]黄雨濛,戚昊琛,胡智文,等.MEMS电容式压力传感器检测电路比较研究[J].电子科技,2015,28(1):186-189.HUANG Yumeng,QI Haochen,HU Zhiwen,et al.Research on detection circuits for MEMS capacitive pressure sensor[J].Electronic Science and Technology,2015,28(1):186-189.
[2]JINDAL S K,RAGHUWANSHI S K.Analytical comparison of circular diaphragm based simple,single and double touch mode-MEMS capacitive pressure sensor[C]//Proceedings of the 2nd International Conference on Communication Systems(ICCS-2015),October 18-20,2015,Rajasthan,India.AIPPublishing,2016,1715(1):020018.
[3]MOLLA-ALIPOUR M,GANJI B A.Analytical analysis of mems capacitive pressure sensor with circular diaphragm[4under dynamic load using differential transformation method(DTM)[J].Acta Mechanica Solida Sinica,2015,28(4):400-]408.
[4]MARSI N,MAJLIS B Y,HAMZAH A A,et al.Characterization direct bonding of SiC/SiN layer on Si wafer for MEMScapacitive pressure sensor[C]//RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics,September 25-27,2014,Langkawi,Malaysia.IEEE,2014:50-53.
[5]HARRI A M,GENZER M,KEMPPINEN O,et al.Pressure observations by the Curiosity rover:Initial results[J].Journal of Geophysical Research Atmospheres,2014,119(1):82-92.
[6]卞玉民,杨拥军.一种基于SOI技术的MEMS电容式压力传感器[J].微纳电子技术,2018,55(5):345-350.BIAN Yumin,YANG Yongjun.MEMS capacitive pressure sensor based on the SOI technique[J].Micronanoelectronic Technology,2018,55(5):345-350.
[7]CHANDRA S,TIWARI R,PARTHIBAN C.A novel technique for fabrication of MEMS based capacitive pressure sensor using press-on-contact in anodic bonding[C]//2014 Symposium on Design,Test,Integration and Packaging of MEMS/MOEMS(DTIP),March 1-4,2014,Cannes,France.EDA Publishing/DTIP,2014:165-169.
[8]黄雨濛,戚昊琛,胡智文,等.MEMS电容式压力传感器检测电路比较研究[J].电子科技,2015,28(1):186-189.HUANG Yumeng,QI Haochen,HU Zhiwen,et al.Research on detection circuits for MEMS capacitive pressure sensor[J].Electronic Science and Technology,2015,28(1):186-189.