摘要
采用周期换向脉冲在柠檬酸盐体系中电镀金,研究了正向脉冲数、反向脉冲峰电流密度和反向脉冲宽对沉积速率,镀金层表面形貌、相结构和厚度均匀性的影响。得到的较优工艺参数为:正向脉冲峰电流密度2.76 A/dm~2,正向脉冲宽100μs,正向占空比10%,正向脉冲数5~15;反向脉冲峰电流密度3.45~6.21 A/dm~2,反向脉冲宽100~160μs,反向占空比10%,反向脉冲数1。在较佳工艺下的沉积速率约为0.11μm/min,所得镀金层均匀、致密,呈光亮的金黄色。
Gold electroplating was conducted in a citrate system using periodic pulse reverse waveform.The effects of forward pulse number,reverse pulse peak current density,and reverse pulse duration on the deposition rate,surface morphology,phase structure,and thickness uniformity of gold coatings was studied.The optimal process parameters were determined as follows:forward pulse peak current density 2.76 A/dm~2,forward pulse duration 100 μs,forward duty cycle 10%,forward pulse number 5-15,reverse pulse peak current density 3.45-6.21 A/dm~2,reverse pulse duration 100-160 μs,reverse duty cycle 10%,and reverse pulse number 1.The deposition rate under the optimal process conditions was ca.0.11 μm/min,and the gold coating obtained was uniform and compact with a bright golden yellow appearance.
引文
[1]MARAUSKA S,CLAUS M,LISEC T,et al.Low temperature transient liquid phase bonding of Au/Sn and Cu/Sn electroplated material systems for MEMSwafer-level packaging[J].Microsystem Technologies,2013,19(8):1119-1130.DOI:10.1007/s00542-012-1708-5.
[2]SABAN S B,DARLING R B.Multi-element heavy metal ion sensors for aqueous solutions[J].Sensors and Actuators B:Chemical,1999,61(1/2/3):128-137.DOI:10.1016/S0925-4005(99)00256-7.
[3]OBERHAMMER J,NIKLAUS F,STEMME G.Sealing of adhesive bonded devices on wafer level[J].Sensors and Actuators A:Physical,2004,110(1/2/3):407-412.DOI:10.1016/j.sna.2003.06.003.
[4]VIDRINE A B,PODLAHA E J.Composition electrodeposition of ultrafineγ-alumina particles in nickel matrices;Part I:citrate and chloride electrolytes[J].Journal of Applied Electrochemistry,2001,31(4):461-468.DOI:10.1023/a:1017532103622.
[5]WILKINSON P.Understanding gold plating[J].Gold Bulletin,1986,19(3):75-81.DOI:10.1007/bf03214646.
[6]HONMA H,KAGAYA Y.Gold plating using the disulfiteaurate complex[J].Journal of the Electrochemical Society,1993,140(9):L135-L137.DOI:10.1149/1.2220894.
[7]CHEN C Y,YOSHIBA M,NAGOSHI T,et al.Pulse electroplating of ultra-fine grained Au films with high compressive strength[J].Electrochemistry Communications,2016,67:51-54.DOI:10.1016/j.elecom.2016.03.017.
[8]GRüNER C,REECK P,JACOBS P P,et al.Gold coated metal nanostructures grown by glancing angle deposition and pulsed electroplating[J].Physics Letters A,2018,382(19):1287-1290.DOI:10.1016/j.physleta.2018.03.010.
[9]ZNATI S A,CHEDID N,MIAO H X,et al.Electrodeposition of gold to conformally fill high-aspect-ratio nanometric silicon grating trenches:a comparison of pulsed and direct current protocols[J].Journal of Surface Engineered Materials and Advanced Technology,5(4):207-213.DOI:10.4236/jsemat.2015.54022.
[10]CHANDRASEKAR M S,PUSHPAVANAM M.Pulse and pulse reverse plating-conceptual,advantages and applications[J].Electrochimica Acta,53(8):3313-3322.DOI:10.1016/j.electacta.2007.11.054.
[11]雷婷,袁心强,郑利珊.无氰换向脉冲电铸金的微观结构与性能[J].电镀与涂饰,2015,34(16):893-897.
[12]LIU Z W,ZHENG M,HILTY R D,et al.The effect of pulse reversal on morphology of cobalt hard gold[J].Electrochimica Acta,2011,56(5):2546-2551.
[13]ZAREIE H,AGAH M.Self-patterned gold electroplating for high-aspect ratio MEMS structures[J].Ecs Transactions,2010,33(8):309-312.DOI:10.1149/1.3484134.
[14]ARSLAN B,DEMIRCI G,KARAKAYAī,et al.Formation of gold-plated electroformed copper structures[J].Advances in Materials and Processing Technologies,2015,1(3/4):384-393.DOI:10.1080/2374068X.2015.1127547.
[15]李行行.双向脉冲镀铬电流参数对镀铬层延迟裂纹影响[D].成都:西华大学,2013.
[16]黄德华.双脉冲法电镀非晶态Ni-P合金及其影响因素研究[D].太原:中北大学,2010.