碳化硅超声-电化学机械抛光试验研究
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摘要
为探究超硬脆碳化硅(Si C)材料的高效研抛方法,分别应用铸铁抛光盘、聚氨酯抛光盘、半固结磨粒抛光盘在自来水、KOH溶液、芬顿反应液3种研抛液中通过控制变量法对Si C进行了超声-电化学机械研抛试验,得到以试件材料去除率和表面质量为评价指标的优化抛光工艺参数.试验结果表明:使用铸铁抛光盘时材料去除率高,但表面质量差;使用半固结磨粒抛光盘时表面质量最好,但材料去除率低;芬顿反应液对提高试件的材料去除率效果最好;在试件与抛光盘之间的电压为+10 V时,试件的材料去除率最高,比无电压时提高了55.1%;当试件保持环施加超声振动后,比无超声时材料去除率提高了91.7%,可见超声振动对Si C试件抛光起主要作用.
To explore an efficient polishing method for ultra-hard brittle silicon carbide materials,an ultrasonicelectrochemical mechanical polishing experiment was performed on the SiC specimens by controlling variable method. The SiC specimens were polished by cast iron polishing plate,polyurethane polishing plate and semi-fixed abrasive polishing plate in three kinds of polishing liquids,i. e. tap water,KOH solution and Fenton reaction solution respectively,and the optimized polishing process parameters based on the material removal rate and surface quality of SiC specimen were obtained. The results show that the material removal rate is high when using cast iron polishing plate,but the surface quality is poor. The surface quality is best when using semi-fixed abrasive polishing plate,but the material removal rate is low. The Fenton solution has the best effect on improving the material removal rate. When the voltage between specimen and polishing plate is + 10 V,the material removal rate is the highest,which is raised by 55.1% than that without voltage. When the ultrasonic vibration of the specimen retaining ring was applied,the material removal rate was increased by 91. 7% compared with that of non-ultrasound. The ultrasonic vibration plays a major role in the polishing of Si C specimen.
To explore an efficient polishing method for ultra-hard brittle silicon carbide materials,an ultrasonicelectrochemical mechanical polishing experiment was performed on the SiC specimens by controlling variable method. The SiC specimens were polished by cast iron polishing plate,polyurethane polishing plate and semi-fixed abrasive polishing plate in three kinds of polishing liquids,i. e. tap water,KOH solution and Fenton reaction solution respectively,and the optimized polishing process parameters based on the material removal rate and surface quality of SiC specimen were obtained. The results show that the material removal rate is high when using cast iron polishing plate,but the surface quality is poor. The surface quality is best when using semi-fixed abrasive polishing plate,but the material removal rate is low. The Fenton solution has the best effect on improving the material removal rate. When the voltage between specimen and polishing plate is + 10 V,the material removal rate is the highest,which is raised by 55.1% than that without voltage. When the ultrasonic vibration of the specimen retaining ring was applied,the material removal rate was increased by 91. 7% compared with that of non-ultrasound. The ultrasonic vibration plays a major role in the polishing of Si C specimen.
引文
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[16]郝丽君.碳化硅陶瓷研抛过程中电摩擦特性的研究[D].哈尔滨:哈尔滨工业大学,2008:39HAO Lijun. A study of voltage-controlled friction characteristics in polishing process of Si C ceramics[D]. Harbin:Harbin Institute of Technology,2008:39
[17]RAICSH P,HAISS W,NICHOLS R J,et al. Time domain impedance spectroscopy for probing the termination of silicon(100)surfaces in aqueous KOH[J]. The Journal of Physical Chemistry B,2001,105(50):12508. DOI:10.1021/jp011754i
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[19]ISHIKAWA Y,MATSUMOTO Y,NISHIDA Y,et al. Surface treatment of silicon carbide using Ti O2(IV)photocatalyst[J]. Journal of the American Chemical Society,2003,125(21):6558. DOI:10.1021/ja020359i
[2]马磊,彭小强,戴一帆.类芬顿反应在碳化硅光学材料研抛中的作用[J].航空精密制造技术,2012,48(4):9MA Lei, PENG Xiaoqiang, DAI Yifan. Effect of Fenton-kind process in silicon carbon polishing[J]. Aviation Precision Manufacturing Technology,2012,48(4):9
[3]AIDA H,DOI T,TAKEDA H,et al. Ultraprecision CMP for sapphire,Ga N,and SiC for advanced optoelectronics materials[J].Current Applied Physics,2012,12(9):41. DOI:10.1016/j. cap.2012.02.016
[4] NESLEN C L,MITCHEL W C,HENGEHOLD R L. Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC[J]. Journal of Electronic Materials,2001,30(10):1275. DOI:https://doi.org/10.1007/s11664-001-0111-2
[5]LEE H S,JEONG H. Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces[J]. CIRP AnnalsManufacturing Technology,2009,58(1):488. DOI:https://doi.org/10.1016/j.cirp.2009.03.115
[6]LI Canhua,BHAT I B,WANG Rongjun,et al. Electro-chemical mechanical polishing of silicon carbide[J]. Journal of Electronic Materials,2004,33(5):482. DOI:https://doi. org/10. 1007/s11664-004-0207-6
[7] KE Yue,YAN Feng,DEVATY R P,et al. Surface polishing by electrochemical etching of p-type 4H-SiC[J]. Journal of Applied Physics,2009,106(6):259. DOI:https://doi. org/10. 1063/1.3212541
[8]刘力飞,张飞虎,刘民慧.碳化硅陶瓷的超声振动辅助磨削[J].光学精密工程,2015,23(8):2232. DOI:10. 3788/OPE.20152308.2229LIU Lifei,ZHANG Feihu,LIU Minhui. Ultrasonic assisted grinding for silicon carbide[J]. Optics and Precision Engineering,2015,23(8):2232. DOI:10.3788/OPE.20152308.2229
[9]LIAO Yunshi,YU Yunpeng,HUANG Chaowei. Ultrasonic vibration assisted mechanical chemical polishing(mcp)of silicon carbide[J]. Advanced Materials Research,2012,565:255.DOI:https://doi.org/10.4028/www.scientific.net/AMR.565.255.
[10]HARA H,SANO Y,MINURA H,et al. Novel abrasive-free planarization of 4H-SIC(0001)using catalyst[J]. Journal of Electronic Materials,2006(35):12. DOI:https://doi. org/10. 1007/s11664-006-0218-6
[11]SANO Y,ARIMA K,YAMAUCHI K. Planarization of SiC and Ga N wafers using polishing technique utilizing catalyst surface reaction[J]. ECS Journal of Solid State Science and Technology,2013,2(8):3034. DOI:10.1149/2.007308jss
[12]LUO Qiufa,LU Jing,XU Xipeng. A comparative study on the material removal mechanisms of 6H-SiC polished by semi-fixed and fixed diamond abrasive tools[J]. Wear,2016(350/351):106. DOI:https://doi.org/10.1016/j.wear.2016.01.014
[13]LU Jing,LI Yang,XU Xipeng. The effects of abrasive yielding on the polishing of SiC wafers using a semi-fixed flexible pad[J]. Journal of Engineering Manufacture,2015(229):176. DOI:10.1177/0954405414563556
[14]孙丙镇.碳化硅超声-电化学抛光仿真与研抛实验研究[D].哈尔滨:哈尔滨工业大学,2016:45SUN Bingzhen. Simulation and experimental study on ultrasonicelectrochemical polishing of silicon carbide[D].Harbin:Harbin Institute of Technology,2016:45
[15]常敬忠.超声辅助电化学机械抛光仿真与实验研究[D].哈尔滨:哈尔滨工业大学,2017:61CHANG Jingzhong. Simulation and experimental study on ultrasonic assisted electrochemical machanical polishing[D]. Harbin:Harbin Institute of Technology,2017:61
[16]郝丽君.碳化硅陶瓷研抛过程中电摩擦特性的研究[D].哈尔滨:哈尔滨工业大学,2008:39HAO Lijun. A study of voltage-controlled friction characteristics in polishing process of Si C ceramics[D]. Harbin:Harbin Institute of Technology,2008:39
[17]RAICSH P,HAISS W,NICHOLS R J,et al. Time domain impedance spectroscopy for probing the termination of silicon(100)surfaces in aqueous KOH[J]. The Journal of Physical Chemistry B,2001,105(50):12508. DOI:10.1021/jp011754i
[18]PHILIPSEN H G G,KELLY J J. Anisotropy in the anodic oxidation of silicon in KOH solution[J]. The Journal of Physical Chemistry B,2005,109(36):17253. DOI:10.1021/jp052595w
[19]ISHIKAWA Y,MATSUMOTO Y,NISHIDA Y,et al. Surface treatment of silicon carbide using Ti O2(IV)photocatalyst[J]. Journal of the American Chemical Society,2003,125(21):6558. DOI:10.1021/ja020359i