籽晶偏向对高纯半绝缘4H-SiC晶体影响的研究

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英文篇名：Research into the Influencing Factor of Seed on High Purity 4H-SiC Crystal 作者：侯晓蕊 ; 王英民 ; 魏汝省 ; 李斌 ; 王利忠 ; 田牧 ; 刘燕燕 ; 淮珍 ; 王程 ; 王光耀 英文作者：HOU Xiaorui;WANG Yingmin;WEI Rusheng;LI Bin;WANG Lizhong;TIAN Mu;LIU Yanyan;HUAI Zhen;WANG Cheng;WANG Guangyao;Shanxi Semicore Crystal Co.,Ltd.;The 2nd Research Institute of CETC; 关键词：高纯4H-SiC ; 籽晶 ; 晶片缺陷 ; 结晶质量 ; 电学性能 英文关键词：High purity 4H-SiC;;Seed;;Crystal defect;;Crystal quality;;Electrical properties 中文刊名：DGZS 英文刊名：Equipment for Electronic Products Manufacturing 机构：山西烁科晶体有限公司;中国电子科技集团公司第二研究所; 出版日期：2019-06-20 出版单位：电子工业专用设备 年：2019 期：v.48;No.276 基金：国际科技合作项目(2013DFR10020);; 山西省自然科学基金(2012011020-2);; 中国电子科技集团公司技术创新基金(5511234);; 山西省科技重大专项(20181101007) 语种：中文; 页：DGZS201903001 页数：4 CN：03 ISSN：62-1077/TN 分类号：5-7+20

摘要

采用PVT法得到高纯4H-SiC体单晶。研究了0°、1°、4°晶体对晶体台阶流、晶体结晶质量、晶体缺陷、晶体电学性能的影响;晶体台阶流采用奥林巴斯显微镜进行表征,晶体缺陷采用莱卡体系显微镜进行表征,晶体结晶质量采用高分辨XRD进行表征,晶体电学性能采用非接触电阻率测试仪进行表征。实验结果表明:4°籽晶生长的晶体缺陷最少,1°与4°籽晶生长的晶体结晶质量相当,0°籽晶生长的晶体电学性能最均匀。
        High purity 4 H-SiC single crystals grown by physical vapor transport were investigated. This paper studied the effects of 0°seed,1°seed and 4°seed on crystal defect,crystal quality,electrical properties.The step flow characterized by Olympus microscope,crystal defect characterized by Leica microscope,crystal quality characterized by high resolution XRD,electrical properties characterized by non-contact electrical resistivity meter. Experiments indicated that 4 H-SiC single crystals grown by 4°seed had minimal defects. 4 H-SiC single crystals grown by 1° seed and 4° seed had similar crystallization quality. 4 H-SiC single crystals grown by 0°seed had the most uniform resistivity.

引文

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