摘要
采用物理气相传输法在SiC异质籽晶上制备了AlN单晶。通过Raman光谱仪、X射线衍射仪、二次离子质谱仪和X射线光电子能谱研究了AlN单晶的结晶质量和杂质成分,针对不同的杂质成分提出了相应的处理方式。结果表明:C、O为AlN单晶中的主要杂质元素,其中C元素为非故意掺杂,与AlN单晶的生长环境密切相关,随着生长晶体厚度的增加,C杂质元素的含量逐渐降低。而O元素除了源粉和生长系统中吸附氧外,还与抛光过程中形成的氧化物层有关;经腐蚀和退火处理,AlN表面氧化物的含量大幅降低,N/Al摩尔比接近1;经杂质处理后的AlN单晶片可作为同质生长的籽晶。
AlN single crystal was grown on SiC heterogeneous seeds by a physical vapor transport(PVT) method. The crystal quality and impurity composition of AlN single crystal were investigated by Raman spectrometer, X-ray diffractometer, secondary ion mass spectrometer and X-ray photoelectron spectroscope, respectively. Some methods to treat different impurities were proposed. The results show that the major impurities are carbon and oxygen. The non-intentionally doped carbon impurity is closely related to the growth system of Al N crystal. However, the content of carbon impurity gradually reduces with increasing the crystal thickness. Except for the introduction from AlN raw materials and absorbed oxygen in the system, the oxygen impurity is mainly originated from the oxide thin layer, forming in the polishing process. The content of oxygen is dramatically decreased when the polished AlN wafer is treated via acid corrosion and thermal annealing treatment. The molar ratio of nitrogen and aluminum in AlN crystal is close to 1, favoring that the polished AlN wafer can be used as the seeds for the homogenesis growth.
引文
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