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SiC籽晶上生长AlN单晶的杂质组成及处理
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  • 英文篇名:Composition and Treatment of Impurities in AlN Single Crystal Grown on SiC Seed
  • 作者:张丽 ; 齐海涛 ; 程红娟 ; 金雷 ; 史月增
  • 英文作者:ZHANG Li;QI Haitao;CHENG Hongjuan;JIN Lei;SHI Yuezeng;The 46th Research Institute of China Electronics Technology Group Corporation;
  • 关键词:氮化铝单晶 ; 碳化硅籽晶 ; 杂质组成 ; 杂质处理
  • 英文关键词:aluminum nitride single crystal;;silicon carbide seed;;impurity composition;;impurity treatment
  • 中文刊名:GXYB
  • 英文刊名:Journal of the Chinese Ceramic Society
  • 机构:中国电子科技集团公司第四十六研究所;
  • 出版日期:2018-11-07 09:41
  • 出版单位:硅酸盐学报
  • 年:2019
  • 期:v.47;No.358
  • 基金:国家重点研发计划项目(2017YFB0404103);; 国家自然科学基金项目(51702297);; 天津市第二批特支计划高层次创新创业团队支持项目
  • 语种:中文;
  • 页:GXYB201901005
  • 页数:6
  • CN:01
  • ISSN:11-2310/TQ
  • 分类号:31-36
摘要
采用物理气相传输法在SiC异质籽晶上制备了AlN单晶。通过Raman光谱仪、X射线衍射仪、二次离子质谱仪和X射线光电子能谱研究了AlN单晶的结晶质量和杂质成分,针对不同的杂质成分提出了相应的处理方式。结果表明:C、O为AlN单晶中的主要杂质元素,其中C元素为非故意掺杂,与AlN单晶的生长环境密切相关,随着生长晶体厚度的增加,C杂质元素的含量逐渐降低。而O元素除了源粉和生长系统中吸附氧外,还与抛光过程中形成的氧化物层有关;经腐蚀和退火处理,AlN表面氧化物的含量大幅降低,N/Al摩尔比接近1;经杂质处理后的AlN单晶片可作为同质生长的籽晶
        AlN single crystal was grown on SiC heterogeneous seeds by a physical vapor transport(PVT) method. The crystal quality and impurity composition of AlN single crystal were investigated by Raman spectrometer, X-ray diffractometer, secondary ion mass spectrometer and X-ray photoelectron spectroscope, respectively. Some methods to treat different impurities were proposed. The results show that the major impurities are carbon and oxygen. The non-intentionally doped carbon impurity is closely related to the growth system of Al N crystal. However, the content of carbon impurity gradually reduces with increasing the crystal thickness. Except for the introduction from AlN raw materials and absorbed oxygen in the system, the oxygen impurity is mainly originated from the oxide thin layer, forming in the polishing process. The content of oxygen is dramatically decreased when the polished AlN wafer is treated via acid corrosion and thermal annealing treatment. The molar ratio of nitrogen and aluminum in AlN crystal is close to 1, favoring that the polished AlN wafer can be used as the seeds for the homogenesis growth.
引文
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