硅基硒纳米颗粒的发光特性研究
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摘要
由于尺寸缩小引起的量子效应,硒(Se)材料的低维纳米结构具有更高的光响应和低的阈值激射等特性,因此成为纳米电子与纳米光电子器件领域一个重要的研究方向.本文通过对非晶硒薄膜的快速热退火来制备硒纳米颗粒,退火温度在100—180 C之间时,结晶后的硒纳米颗粒均为三角晶体结构,其颗粒尺寸随退火温度的增加而线性增大.光致发光谱测试发现三个发光峰,分别位于1.4 eV,1.7 eV和1.83 eV.研究发现位于1.4 eV处的发光峰来源于非晶硒缺陷发光,位于1.83 eV处的发光峰来源于晶体硒的带带跃迁发光;而位于1.7 eV处的发光峰强度随激发功率增强而指数增大,且向短波长移动,该发光峰应该来源于非晶硒与硒纳米颗粒界面处的施主-受主对复合发光.
We have investigated the structure and photoluminescence(PL) properties of Se nanocrystals(NCs) obtained by rapid thermal annealing of a-Se films on Si substrate. The size of Se NCs in a trigonal phase increases linearly with increasing temperature. Moreover,three PL peaks located at 1.4,1.7 and 1.83 eV are observed,which are attributed to the emission of defects in amorphous Se,donoracceprter pair(DAP) recombination at the interface of amorphous Se and Se NCs,and interband transition of Se crystals,respectively.
We have investigated the structure and photoluminescence(PL) properties of Se nanocrystals(NCs) obtained by rapid thermal annealing of a-Se films on Si substrate. The size of Se NCs in a trigonal phase increases linearly with increasing temperature. Moreover,three PL peaks located at 1.4,1.7 and 1.83 eV are observed,which are attributed to the emission of defects in amorphous Se,donoracceprter pair(DAP) recombination at the interface of amorphous Se and Se NCs,and interband transition of Se crystals,respectively.
引文
[1]Zingaro R A,Cooper W C 1974 Selenium(New York:Van Nostrand Reinhold Co.)
[2]Liao Z M,Hou C,Liu L P,Yu D P 2010 Nanoscale Res.Lett.5 926
[3]Liu P,Ma Y R,Cai W W,Wang Z Z,Wang J,Qi L M,Chen D M 2007Nanotechnology 18 205704
[4]Song J M,Zhan Y J,Xu A W,Yu S H 2007 Langmuir 23 7321
[5]Zhang H Y,Lu K,Hu Q 1995 J.Phys.:Candens.Matter 7 5327
[6]Rajalakshmi M,Arora A K 1999 Solid State Commun.110 75
[7]Pan S W,Chen S Y,Li C,Huang W,Lai H K 2011 Thin Solid Films519 6102
[8]Shah C P,Kumar M,Bajaj P N 2007 Nanotechnology 18 385607
[9]Jiang Z Y,Xie Z X,Xie S Y,Zhang X H,Huang R B,Zheng L S 2003Chem.Phys.Lett.36 25
[10]Kumar S 2009 J.Exp.Nanosci 4 341
[11]Golosovsky I V,Smirnov O P,Delaplane R G,Wannberg A,Kibalin Y A,Naberezhnov A A,Vakhrushev S B 2006 Phys.J.B 54 211
[12]He L,Shen Z X,Gu G,Qin L,Tang S H 1999 Chem.Phys.Lett.300504
[13]Liao Z M,Hou C,Zhao Q,Liu L P,Yu D P 2009 Appl.Phys.Lett.95093104
[14]Pan S W,Qi D F,Chen S Y,Li C,Huang W,Lai H K 2011 Acta Phys.Sin.60 098108(in Chinese)[潘书万,亓东峰,陈松岩,李成,黄巍,赖虹凯2011物理学报60 098108]
[15]Gates B,Mayers B,Cattle B,Xia Y 2002 Adv.Funct.Mater.12 219
[16]Mayers B T,Liu K,Sunderland D,Xia Y 2003 Chem.Mater.15 3852
[17]Warren B E 1969 X-ray Diffraction(New York:Addison-Wesley,chapter 13)
[18]Sun H D,Tang Z K,Zhao W M,Wong G K L 1997 Appl.Phys.Lett.71 2457
[19]Umehara A,Nitta S,Furukawa H,Nonomura S 1997 Appl.Surf.Sci.119 176
[20]He L,Shen Z X,Gu G,Qin L,Tang S H 1999 Chem.Phys.Lett.300504
[21]Bergman L,Chen X B,Morrison J L,Huso J 2004 J.Appl.Phys.96675
[22]Adnane B,Lai Y F,Shieh J M,Holtz P O,Ni W X 2009 Solid-State Electronics 53 862
[23]Boyle D S,Brien P O,Otway D J,Robbe O 1999 J.Mater.Chem.9725
[24]Liu B,Cheng C W,Chen R,Shen Z X,Fan H J,Sun H D 2010 J.Phys.Chem.C 114 3407
[2]Liao Z M,Hou C,Liu L P,Yu D P 2010 Nanoscale Res.Lett.5 926
[3]Liu P,Ma Y R,Cai W W,Wang Z Z,Wang J,Qi L M,Chen D M 2007Nanotechnology 18 205704
[4]Song J M,Zhan Y J,Xu A W,Yu S H 2007 Langmuir 23 7321
[5]Zhang H Y,Lu K,Hu Q 1995 J.Phys.:Candens.Matter 7 5327
[6]Rajalakshmi M,Arora A K 1999 Solid State Commun.110 75
[7]Pan S W,Chen S Y,Li C,Huang W,Lai H K 2011 Thin Solid Films519 6102
[8]Shah C P,Kumar M,Bajaj P N 2007 Nanotechnology 18 385607
[9]Jiang Z Y,Xie Z X,Xie S Y,Zhang X H,Huang R B,Zheng L S 2003Chem.Phys.Lett.36 25
[10]Kumar S 2009 J.Exp.Nanosci 4 341
[11]Golosovsky I V,Smirnov O P,Delaplane R G,Wannberg A,Kibalin Y A,Naberezhnov A A,Vakhrushev S B 2006 Phys.J.B 54 211
[12]He L,Shen Z X,Gu G,Qin L,Tang S H 1999 Chem.Phys.Lett.300504
[13]Liao Z M,Hou C,Zhao Q,Liu L P,Yu D P 2009 Appl.Phys.Lett.95093104
[14]Pan S W,Qi D F,Chen S Y,Li C,Huang W,Lai H K 2011 Acta Phys.Sin.60 098108(in Chinese)[潘书万,亓东峰,陈松岩,李成,黄巍,赖虹凯2011物理学报60 098108]
[15]Gates B,Mayers B,Cattle B,Xia Y 2002 Adv.Funct.Mater.12 219
[16]Mayers B T,Liu K,Sunderland D,Xia Y 2003 Chem.Mater.15 3852
[17]Warren B E 1969 X-ray Diffraction(New York:Addison-Wesley,chapter 13)
[18]Sun H D,Tang Z K,Zhao W M,Wong G K L 1997 Appl.Phys.Lett.71 2457
[19]Umehara A,Nitta S,Furukawa H,Nonomura S 1997 Appl.Surf.Sci.119 176
[20]He L,Shen Z X,Gu G,Qin L,Tang S H 1999 Chem.Phys.Lett.300504
[21]Bergman L,Chen X B,Morrison J L,Huso J 2004 J.Appl.Phys.96675
[22]Adnane B,Lai Y F,Shieh J M,Holtz P O,Ni W X 2009 Solid-State Electronics 53 862
[23]Boyle D S,Brien P O,Otway D J,Robbe O 1999 J.Mater.Chem.9725
[24]Liu B,Cheng C W,Chen R,Shen Z X,Fan H J,Sun H D 2010 J.Phys.Chem.C 114 3407
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