A single-ended wideband reconfigurable receiver front-end for multi-mode multi-standard applications in 0.18μm CMOS
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摘要
This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm~2 including pads.
This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm~2 including pads.
This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm~2 including pads.
引文
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[4]Lien Y,Klumperink E,Tenbroek B.A high-linearity CMOS receiver achieving+44 d Bm IIP3 and+13 d Bm B1dB for SAW-less LTE radio[C].In:Proceedings of the IEEE International Solid-State Circuits Conference,San Francisco,USA,2017.412-414
[5]Luo C K,Gudem P S,Buckwalter J K.A 0.4-6-GHz 17-d Bm B1dB 36-dBm IIP3channel-selecting low-noise amplifier for SAW-less 3G/4G FDD diversity receivers[J].IEEE Transactions on Microwave Theory and Techniques,2016,64(4):1110-1121
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[8]Fan X,Tao J,Bao K,et al.A reconfigurable passive mixer for multimode multistandard receivers in 0.18μm CMOS[J].Journal of Semiconductors,2016,37(8):085001-1-8
[9]Zhou C,Zhang L,Zhang L,et al.Injection-lockingbased power and speed optimization of CML dividers[J].IEEE Transactions on Circuits Systems-II:Express Briefs,2011,58(9):565-569
[10]Wang X,Sturm J,Yan N,et al.0.6-3-GHz wideband receiver RF front-end with a feedforward noise and distortion cancellation resistive-feedback LNA[J].IEEETransactions on Microwave Theory and Techniques,2012,60(2):387-392
[11]Cha H K,Kwon K,Choi J,et al.A CMOS wideband RFfront-end with mismatch calibrated harmonic rejection mixer for terrestrial digital TV tuner applications[J].IEEE Transactions on Microwave Theory and Techniques,2010,58(8):2143-2151
[12]Tao J,Fan X,Zhao Y.A tunable passive mixer for SAW-less front-end with reconfigurable voltage conversion gain and intermediate frequency bandwidth[J].High Technology Letters,2018,24(1):10-18
[2]El-Nozahi M,Sánchez-Sinencio E,Entesari K.Power-aware multiband-multistandard CMOS receiver system-level budgeting[J].IEEE Transactions on Circuits Systems II:Express Briefs,2009,65(7):570-574
[3]Hedayati H,Lau W A,Kim N,et al.A 1.8 d B NF blocker-filtering noise-canceling wideband receiver withshared TIA in 40 nm CMOS[J].IEEE Journal of Solid-State Circuits,2015,50(5):1148-1164
[4]Lien Y,Klumperink E,Tenbroek B.A high-linearity CMOS receiver achieving+44 d Bm IIP3 and+13 d Bm B1dB for SAW-less LTE radio[C].In:Proceedings of the IEEE International Solid-State Circuits Conference,San Francisco,USA,2017.412-414
[5]Luo C K,Gudem P S,Buckwalter J K.A 0.4-6-GHz 17-d Bm B1dB 36-dBm IIP3channel-selecting low-noise amplifier for SAW-less 3G/4G FDD diversity receivers[J].IEEE Transactions on Microwave Theory and Techniques,2016,64(4):1110-1121
[6]Kim J H,Go M H,Hwang S G,et al.Simplified multiband front-end architecture using a multifunction circuit[J].IEICE Electron Express,2016,13(9):1-6
[7]Bruccoleri F,Klumperink E A M,Nauta B.Wide-band CMOS low-noise amplifier exploiting thermal noise canceling[J].IEEE Journal of Solid-State Circuits,2004,39(2):275-282
[8]Fan X,Tao J,Bao K,et al.A reconfigurable passive mixer for multimode multistandard receivers in 0.18μm CMOS[J].Journal of Semiconductors,2016,37(8):085001-1-8
[9]Zhou C,Zhang L,Zhang L,et al.Injection-lockingbased power and speed optimization of CML dividers[J].IEEE Transactions on Circuits Systems-II:Express Briefs,2011,58(9):565-569
[10]Wang X,Sturm J,Yan N,et al.0.6-3-GHz wideband receiver RF front-end with a feedforward noise and distortion cancellation resistive-feedback LNA[J].IEEETransactions on Microwave Theory and Techniques,2012,60(2):387-392
[11]Cha H K,Kwon K,Choi J,et al.A CMOS wideband RFfront-end with mismatch calibrated harmonic rejection mixer for terrestrial digital TV tuner applications[J].IEEE Transactions on Microwave Theory and Techniques,2010,58(8):2143-2151
[12]Tao J,Fan X,Zhao Y.A tunable passive mixer for SAW-less front-end with reconfigurable voltage conversion gain and intermediate frequency bandwidth[J].High Technology Letters,2018,24(1):10-18