The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence
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摘要
InGaN-based green light-emitting diodes(LEDs) with different growth temperatures of superlattice grown on Si(111) substrates are investigated by temperature-dependent electroluminescence between 100 K and 350 K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures(about 100 K-150 K). Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
InGaN-based green light-emitting diodes(LEDs) with different growth temperatures of superlattice grown on Si(111) substrates are investigated by temperature-dependent electroluminescence between 100 K and 350 K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures(about 100 K-150 K). Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
InGaN-based green light-emitting diodes(LEDs) with different growth temperatures of superlattice grown on Si(111) substrates are investigated by temperature-dependent electroluminescence between 100 K and 350 K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures(about 100 K-150 K). Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.
引文
[1]Tong J H,Zhao B J,Ren Z W,Wang X F,Chen X and Li S L 2013 Chin.Phys.Lett.30 058503
[2]Wang L,Meng X,Song J H,Kim T S,Lim S Y,Hao Z B,Luo Y,Sun C Z,Han Y J,Xiong B,Wang J and Li H T2017 Chin.Phys.Lett.34 017301
[3]Chang S P,Wang C H,Chiu C H,Li J C,Lu Y S,Li Z Y,Yang H C,Kuo H C,Lu T C and Wang S C 2010 Appl.Phys.Lett.97 251114
[4]Kudryk Y Y,Tkachenko A K and Zinovchuk A V 2012Semicond.Sci.Technol.27 055013
[5]Hammersley S,Badcock T J,Watson-Parris D,Godfrey M J,Dawson P,Kappers M J and Humphreys C J 2011 Phys.Status Solidi C 8 2194
[6]Shin D S,Han D P,Oh J Y and Shim J I 2012 Appl.Phys.Lett.100 153506
[7]Mo C L,Fang W Q,Pu Y,Liu H C and Jiang F Y 2005 J.Cryst.Growth 285 312
[8]Liu J L,Feng F F,Zhou Y H,Zhang J L and Jiang F Y2011 Appl.Phys.Lett.99 111112
[9]Gotz W,Johnson N M,Walker J,Bour D P and Street R A 1996 Appl.Phys.Lett.68 667
[10]Quan Z J,Liu J L,Fang F,Wang G X and Jiang F Y 2015J.Appl.Phys.118 193102
[11]Han D P,Zheng D G,Oh C H,Kim H,Shim J I,Shin D S and Kim K S 2014 Appl.Phys.Lett.104 151108
[12]Lee C M,Chuo C C,Dai J F,Zheng X F and Chyi J I 2001J.Appl.Phys.89 6554
[13]Wu X M,Liu J L,Quan Z J,Xiong C B,Zheng C D,Zhang J L,Mao Q H and Jiang F Y 2014 Appl.Phys.Lett.104221101
[14]Kim M H,Schubert M F,Dai Q,Kim J K,Schubert E F,Piprek J and Park Y 2007 Appl.Phys.Lett.91 183507
[2]Wang L,Meng X,Song J H,Kim T S,Lim S Y,Hao Z B,Luo Y,Sun C Z,Han Y J,Xiong B,Wang J and Li H T2017 Chin.Phys.Lett.34 017301
[3]Chang S P,Wang C H,Chiu C H,Li J C,Lu Y S,Li Z Y,Yang H C,Kuo H C,Lu T C and Wang S C 2010 Appl.Phys.Lett.97 251114
[4]Kudryk Y Y,Tkachenko A K and Zinovchuk A V 2012Semicond.Sci.Technol.27 055013
[5]Hammersley S,Badcock T J,Watson-Parris D,Godfrey M J,Dawson P,Kappers M J and Humphreys C J 2011 Phys.Status Solidi C 8 2194
[6]Shin D S,Han D P,Oh J Y and Shim J I 2012 Appl.Phys.Lett.100 153506
[7]Mo C L,Fang W Q,Pu Y,Liu H C and Jiang F Y 2005 J.Cryst.Growth 285 312
[8]Liu J L,Feng F F,Zhou Y H,Zhang J L and Jiang F Y2011 Appl.Phys.Lett.99 111112
[9]Gotz W,Johnson N M,Walker J,Bour D P and Street R A 1996 Appl.Phys.Lett.68 667
[10]Quan Z J,Liu J L,Fang F,Wang G X and Jiang F Y 2015J.Appl.Phys.118 193102
[11]Han D P,Zheng D G,Oh C H,Kim H,Shim J I,Shin D S and Kim K S 2014 Appl.Phys.Lett.104 151108
[12]Lee C M,Chuo C C,Dai J F,Zheng X F and Chyi J I 2001J.Appl.Phys.89 6554
[13]Wu X M,Liu J L,Quan Z J,Xiong C B,Zheng C D,Zhang J L,Mao Q H and Jiang F Y 2014 Appl.Phys.Lett.104221101
[14]Kim M H,Schubert M F,Dai Q,Kim J K,Schubert E F,Piprek J and Park Y 2007 Appl.Phys.Lett.91 183507