Magnetotransport properties of graphene layers decorated with colloid quantum dots
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摘要
The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots(CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime.The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.
The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots(CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime.The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.
The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots(CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime.The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects.
引文
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[38] Goldman V J and Su B 1995 Science 267 1010
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[40] Kato M, Endo A, Katsumoto S and lye Y 2008 Phys. Rev. B 77 155318
[2] De Graaf S E, Skacel S T, Honigl-Decrinis T, Shaikhaidarov R,Rotzinger H, Linzen S, Ziegler M, Hiibner U, Meyer H G, Antonov V, Il'ichev E, Ustinov A V, Tzalenchuk A Y and Astafiev O V 2018Nat. Phys. 14 590
[3] Hackens B, Martins F, Faniel S, Dutu C A, Sellier H, Huant S, Pala M,Desplanque L, Wallart X and Bayot V 2010 Nat. Commun. 1 39
[4] Ji Y, Chung Y, Sprinzak D, Heiblum M, Mahalu D and Shtrikman H2003 Nature 422 415
[5] Hong S S, Zhang Y, Cha J J, Qi X L and Cui Y 2014 Nano Lett. 142815
[6] Banszerus L, Schmitz M, Engels S, Dauber J, Oellers M, Haupt F,Watanabe K, Taniguchi T, Beschoten B and Stampfer C 2015 Sci. Adv.1 e1500222
[7] Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P and Geim A K 2007 Science 3151379
[8] Wei D S, van der Sar T, Sanchez-Yamagishi J D, Watanabe K,Taniguchi T, Jarillo-Herrero P, Halperin B I and Yacoby A 2017 Sci.Adv. 3 e1700600
[9] Das Sarma S, Adam S, Hwang E H and Rossi E 2011 Rev. Mod. Phys.83 407
[10] Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I,Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[11] Zhang Y, Tan Y, Stormer H L and Kim P 2005 Nature 438 201
[12] Novoselov K S,McCann E,Morozov S V, Fal'ko V I,Katsnelson M I,Zeitler U, Jiang D, Schedin F and Geim A K 2006 Nat. Phys. 2 177
[13] Chen J H, Jang C, Xiao S, Ishigami M and Fuhrer M S 2008 Nat. Nanotechnol. 3 206
[14] Engels S, Terres B, Epping A, Khodkov T, Watanabe K, Taniguchi T,Beschoten B and Stampfer C 2014 Phys. Rev. Lett. 113 126801
[15] Allain A, Han Z and Bouchiat V 2012 Nat. Mater. 11 590
[16] Gonzalez-Herrero H,Gomez-Rodriguez J M,Mallet P,Moaied M,Palacios J J, Salgado C, Ugeda M M, Veuillen J Y, Yndurain F and Brihuega I 2016 Science 352 437
[17] Sukenik N, Alpern H, Katzir E, Yochelis S, Millo O and Paltiel Y 2018Adv. Mater. Technol. 3 1700300
[18] Dubey S, Singh V, Bhat A K, Parikh P, Grover S, Sensarma R, Tripathi V, Sengupta K and Deshmukh M M 2013 Nano Lett. 13 3990
[19] Forsythe C, Zhou X, Watanabe K, Taniguchi T, Pasupathy A, Moon P,Koshino M, Kim P and Dean C R 2018 Nat. Nanotechnol. 13 566
[20] Konstantatos G, Badioli M, Gaudreau L, Osmond J, Bernechea M, de Arquer F P G, Gatti F and Koppens F H L 2012 Nat. Nanotechnol. 7363
[21] Nag A, Mitra A and Mukhopadhyay S C 2018 Sens. Actuators A Phys.270 177
[22] Altshuler B L, Khmel'Nitzkii D, Larkin A I and Lee P A 1980 Phys.Rev.B 22 5142
[23] McCann E, Kechedzhi K, Fal'ko V I, Suzuura H, Ando T and Altshuler B L 2006 Phys. Rev. Lett. 97 146805
[24] Tikhonenko F V, Kozikov A A, Savchenko A K and Gorbachev R V2009 Phys. Rev. Lett. 103 226801
[25] Huang Y Q, Zhu R J, Kang N, Du J and Xu H Q 2013 Appl. Phys. Lett.103 143119
[26] Carrillo-Bastos R, Ochoa M, Zavala S A and Mireles F 2018 Phys. Rev.B 98 165436
[27] Gorbachev R V,Tikhonenko F V,Mayorov A S,Horsell D W and Savchenko A K 2007 Phys. Rev. Lett. 98 176805
[28] Hikami S, Larkin A I and Nagaoka Y 1980 Prog. Theor. Phys. 63 707
[29] Chen Y F, Bae M H, Chialvo C, Dirks T, Bezryadin A and Mason N2011 Physica B 406 785
[30] Liao Z M, Han B H, Wu H C and Yu D P 2010 Appl. Phys. Lett. 97163110
[31] Staley N, Puls C and Liu Y 2008 Phys. Rev. B 77 155429
[32] lye Y, Ueki M, Endo A and Katsumoto S 2004 J. Phys. Soc. Jpn. 733370
[33] Uryu S and Ando T 1996 Phys. Rev. B 53 13613
[34] Sun Z, Liu Z, Li J, Tai G A, Lau S P and Yan F 2012 Adv. Mater. 245878
[35] Kim G H,de Arquar F P G, Yoon Y J,Lan X,Liu M,Voznyy O, Yang Z, Fan F, Ip A H, Kanjanaboos P, Hoogland S, Kim J Y and Sargent E H2015 Nano Lett. 15 7691
[36] Cao W, Yuan L,Patterson R,Wen X, Tapping P C,Kee T,Veetil B P,Zhang P, Zhang Z, Zhang Q, Reece P, Bremner S, Shrestha S, Conibeer G and Huang S 2017 Nano scale 9 17133
[37] Giansante C, Carbone L, Giannini C, Altamura D, Ameer Z, Maruccio G, Loiudice A, Belviso M R, Cozzoli P D, Rizzo A and Gigli G 2013J. Phys. Chem. C 117 13305
[38] Goldman V J and Su B 1995 Science 267 1010
[39] Camino F E, Zhou W and Goldman V J 2007 Phys. Rev. Lett. 98076805
[40] Kato M, Endo A, Katsumoto S and lye Y 2008 Phys. Rev. B 77 155318