异质界面个数对PbZr_(0.52)Ti_(0.48)O_3/Ba(Mg_(1/3)Ta_(2/3))O_3薄膜铁电性能的影响
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摘要
采用溶胶-凝胶法制备PbZr_(0.52)Ti_(0.48)O_3(PZT)薄膜前驱体溶液,采用水溶液凝胶法制备Ba(Mg_1/_3Ta_2/_3)O_3(BMT)薄膜前驱体溶液。研究了异质界面个数对PZT/BMT薄膜微观形貌、铁电性能的影响。在PZT/BMT薄膜中,PZT薄膜没有裂纹、结晶良好,界面个数的增加有利于PZT薄膜结构的致密。界面个数的增加可降低PZT/BMT薄膜剩余极化值和矫顽场。PZT/BMT薄膜在适当偏置电场下存在一个介电峰值,且正负偏置电场下的介电峰值不同,介电偏压特性曲线呈现不对称分布。采用二极管等效界面势垒和对薄膜电滞回线求导可有效解释介电偏压特性曲线不对称和介电峰值的差异。
In this paper,PbZr_(0.52)Ti_(0.48)O_3(PZT)and Ba(Mg_(1/3)Ta_(2/3))O_3(BMT)precursor solution were prepared by sol-gel method and aqueous solution-gel method,respectively.The effects of interface number on the microstructure and ferroelectric properties of PZT/BMT thin films were studied.All the PZT/BMT thin films are fully crystallized and have a dense microstructure without any crack.The increase of interface number is beneficial to the PZT thin films that have a dense microstructure.With the increase of interface number,the remnant polarizations and coercive fields of PZT/BMT thin films decrease.Theε-E loops of PZT thin films show asymmetry and have a dielectric peak that is different under positive and negative bias.Diode equivalent interface barrier and derivative curve of hysteresis loop of PZT/BMT thin film were used to explain the asymmetry ofε-E loops and the difference of dielectric peak.
In this paper,PbZr_(0.52)Ti_(0.48)O_3(PZT)and Ba(Mg_(1/3)Ta_(2/3))O_3(BMT)precursor solution were prepared by sol-gel method and aqueous solution-gel method,respectively.The effects of interface number on the microstructure and ferroelectric properties of PZT/BMT thin films were studied.All the PZT/BMT thin films are fully crystallized and have a dense microstructure without any crack.The increase of interface number is beneficial to the PZT thin films that have a dense microstructure.With the increase of interface number,the remnant polarizations and coercive fields of PZT/BMT thin films decrease.Theε-E loops of PZT thin films show asymmetry and have a dielectric peak that is different under positive and negative bias.Diode equivalent interface barrier and derivative curve of hysteresis loop of PZT/BMT thin film were used to explain the asymmetry ofε-E loops and the difference of dielectric peak.
引文
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[4]Lee B D,Hong R L,Yoon K H,et al.Effect of stacking layers on the microwave dielectric properties of MgTiO3/CaTiO3 multilayered thin films[J].Journal of the American Ceramic Society,2005,88(5):1197-1200.
[5]Tang L,Bian Y,Zhai J,et al.Ferroelectric-dielectric composites model of Ba0.5Sr0.5TiO3/Mg2AO4(A=Ti,Si)for tunable application[J].Journal of the American Ceramic Society,2014,97(3):862-867.
[6]Bian Y,Zhai J.Low dielectric loss Ba0.6Sr0.4TiO3/MgTiO3 composite thin films prepared by a solgel process[J].Journal of Physics and Chemistry of Solids,2014,75(6):759-764.
[7]Zhou J,Li R R,Li R,et al.Effect of heterogeneous interface on the microwave dielectric properties of Ca(Mg1/3Nb2/3)O3/CaT iO 3 thin films[J].Applied Surface Science,2012,259(259):29-33.
[8]Wu Z,Zhou J,Chen W,et al.Effects of residual stress on the electrical properties in PbZr0.52Ti0.48O3 thin films[J].Journal of Sol-Gel Science and Technology,2015,75(3):551-556.
[9]Wen L,Hu L,Shen J,et al.Aqueous solution-gel preparation and dielectric properties of Ba(Mg1/3Nb2/3)O3 thin films with long-range order[J].Journal of the American Ceramic Society,2015,98(3):873-878.