半导体激光器的物理特性分析及研究
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摘要
当前半导体激光器的物理特性分析方法忽略了稳态温升曲线的负面影响,获取的测量参数不准确,影响半导体激光器的热特性分析效果,提出新的半导体激光器的热特性分析方法。采用时间常数谱法获取半导体激光器热容的Foster热学模型,基于Cauer热学模型对全部热阻、热容实施叠加操作得到积分结构函数与微分结构函数,采用半导体激光器结构函数处理稳态温升曲线,提取热流路径不同材料的升温作用,采用有效热阻计算公式获取热阻值,获取半导体激光器的热阻测量结果;根据热阻测量结果计算半导体激光器的光功率,实验结果表明,本文方法能够准确分析半导体激光器的物理特性分析。
The current method of analyzing the physical characteristics of semiconductor laser neglects the negative influence of the steady-state temperature rise curve,the inaccurate measurement parameters can be obtained,the thermal characteristic analysis effect of the semiconductor laser is affected,and a new thermal characteristic analysis method of the semiconductor laser is proposed. The Foster thermal model of the heat capacity of a semiconductor laser is obtained by the time constant spectrum method. Based on the Cauer thermal model,the integral structure function and the differential structure function are obtained for the superposition of all thermal resistance and heat capacity. The temperature rise curve of the steady state is processed by the structure function of the semiconductor laser,and the heating effect of the different materials of the heat flow path is extracted. An effective thermal resistance formula is used to obtain the thermal resistance value,and the thermal resistance measurement results of the semiconductor laser are obtained. The optical power of the semiconductor laser is calculated according to the thermal resistance measurement results. The experimental results show that this method can analyze the physical characteristics of the semiconductor laser accurately.
The current method of analyzing the physical characteristics of semiconductor laser neglects the negative influence of the steady-state temperature rise curve,the inaccurate measurement parameters can be obtained,the thermal characteristic analysis effect of the semiconductor laser is affected,and a new thermal characteristic analysis method of the semiconductor laser is proposed. The Foster thermal model of the heat capacity of a semiconductor laser is obtained by the time constant spectrum method. Based on the Cauer thermal model,the integral structure function and the differential structure function are obtained for the superposition of all thermal resistance and heat capacity. The temperature rise curve of the steady state is processed by the structure function of the semiconductor laser,and the heating effect of the different materials of the heat flow path is extracted. An effective thermal resistance formula is used to obtain the thermal resistance value,and the thermal resistance measurement results of the semiconductor laser are obtained. The optical power of the semiconductor laser is calculated according to the thermal resistance measurement results. The experimental results show that this method can analyze the physical characteristics of the semiconductor laser accurately.
引文
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[2]乔红超,赵吉宾,陆莹.激光诱导冲击波应用技术研究现状[J].表面技术,2016,45(1):1-6.
[3]孟慧成,武德勇,谭昊,等.窄光谱高亮度半导体激光器光栅-外腔光谱合束实验研究[J].中国激光,2015,42(3):14-20.
[4]王文,褚金雷,高欣,等.基于多芯片封装的半导体激光器热特性[J].强激光与粒子束,2014,26(1):80-85.
[5]毛嵩,吴正茂,樊利,等.基于次谐波调制光注入半导体激光器获取窄线宽微波信号的实验研究[J].物理学报,2014,63(24):229-236.
[6]井红旗,王翠鸾,吴霞,等.半导体激光器光纤耦合输出光斑均匀性的研究[J].半导体光电,2015,36(6):914-917.
[7]刘景旺,李忠洋,张卫中,等. DFB半导体激光器调谐动态波长特性研究[J].光谱学与光谱分析,2015,35(11):3220-3223.
[8]马凤山,叶维芳.分布反馈激光器超载运行—预失真法提高了性价比[J].有线电视技术,2000,8(1):69-72.
[9]陈少娟,李毅,袁文瑞,等. 980nm半导体激光器输出光谱特性的改善[J].光子学报,2015,44(1):45-51.
[10] GOPAL P,FORNARI M,CURTAROLO S,et al. Improved predictions of the physical properties of Zn-and Cd-based wide band-gap semiconductors:a validation of the ACBN0 functional[J]. Physical Review B,2015,91(24):997-1012.
[11]孙正和,卢特安,刘天宇,等.用半导体激光器测普朗克常量[J].大学物理,2017,36(1):28-32.
[12]刘明欢,李大禹,姚丽双,等.基于液晶/聚合物光栅选频的高效率有机半导体激光器[J].液晶与显示,2017,32(11):853-860.
[13]郭海平,万辰皓,许成文,等.外腔半导体激光器动态模稳定性的研究[J].激光技术,2016,40(5):706-710.
[14] VESELOV D A,SHASHKIN I S,BOBRETSOVA Y K,et al. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures(110-120K)[J]. Semiconductors,2016,50(10):1396-1402.
[15]邓增,沈俊,戴巍,等.大功率半导体激光器散热研究综述[J].工程热物理学报,2017,V38(7):1422-1433.
[16]陈熙,全伟.基于PD的半导体激光器温度控制系统设计方法[J].北京航空航天大学学报,2015,41(12):2391-2396.
[17]田学农,王志功.基于Volterra级数分析的半导体激光器非线性模型[J].东南大学学报(自然科学版),2010,40(2):253-257.