蓝宝石磁流变化学机械抛光工艺研究
|
摘要
针对超光滑平面蓝宝石衬底片存在亚表层损伤的问题,文中利用磁流变抛光技术进行蓝宝石衬底片抛光以满足现有生产需要,研究了磁流变抛光中抛光压力、抛光盘转速、工件盘转速及抛光液温度等工艺参数对C向蓝宝石衬底片表面粗糙度和去除率的影响。采用正交实验方法获得了一组最佳工艺参数为:抛光压力为25 kg,抛光盘转速为40 r·min~(-1),工件盘转速为20 r·min~(-1),抛光液温度为38℃。研究结果表明:蓝宝石抛光后最优表面粗糙度R_a为0.31 nm,去除率达到2.68μm·h~(-1)。
For the sub-surface damage of ultra-smooth planar sapphire substrates,the paper presents a magnetorheological finishing(MRF) technique for polishing sapphire substrates.Parameters,which affect surface roughness and removal rate of C-Directed sapphire substrates such as polishing pressure,speed of polishing disk,speed of work piece disk and temperature of polishing fluid in Magnetorheological finishing,are studied.By means of an orthogonal experiment,a set of optimum technological parameters are obtained:polishing pressure 25 kg,polishing disc speed 40 r·min~(-1),work piece disc speed 20 r·min~(-1),polishing liquid temperature 38 ℃.The results show that the optimal surface roughness and the removal rate of the polished sapphire are R_a 0.31 nm and 2.68 μm·h~(-1),respectively.
For the sub-surface damage of ultra-smooth planar sapphire substrates,the paper presents a magnetorheological finishing(MRF) technique for polishing sapphire substrates.Parameters,which affect surface roughness and removal rate of C-Directed sapphire substrates such as polishing pressure,speed of polishing disk,speed of work piece disk and temperature of polishing fluid in Magnetorheological finishing,are studied.By means of an orthogonal experiment,a set of optimum technological parameters are obtained:polishing pressure 25 kg,polishing disc speed 40 r·min~(-1),work piece disc speed 20 r·min~(-1),polishing liquid temperature 38 ℃.The results show that the optimal surface roughness and the removal rate of the polished sapphire are R_a 0.31 nm and 2.68 μm·h~(-1),respectively.
引文
[1] 董双阳,颜志强,刘祖耀,等.抛光液pH值、温度和浓度对蓝宝石抛光效率的影响[J].表面技术,2017,46(5):261.DONG Shuangyang,YAN Zhiqiang,LIU Zuyao,et al.Effect of Slurry pH,Temperature and Concentration on Removal Efficiency of Sapphire Material[J].Surface Technology,2017,46(5):261.(in Chinese)
[2] 余青,刘德福,陈涛.单晶蓝宝石衬底晶片的化学机械抛光工艺研究[J].表面技术,2017,46(3):253.YU Qing,LIU Defu,CHEN Tao.Chemico-mechanical Polishing Technique of Monocrystal Sapphire Substrate Wafer[J].Surface Technology,2017,46(3):253.(in Chinese)
[3] 赵欣,牛新环,王建超,等.不同抛光参数对蓝宝石衬底CMP质量的影响[J].微电子学,2018,48(2):274.ZHAO Xin,NIU Xinhuan,WANG Jianchao,et al.Effects of Different Polishing Parameters on the CMP Quality of Sapphire Substrate[J].Microelectronics,2018,48(2):274.(in Chinese)
[4] 钟敏,袁任江,李小兵,等.磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响[J].中国表面工程,2018,31(6):125.ZHONG Min,YUAN Renjiang,LI Xiaobing,et al.Effects of Abrasive Particles and Pads’ Characteristics on Ultrasonic Assisted Chemical Mechanical Polishing for Sapphire[J].China Surface Engineering,2018,31(6):125.(in Chinese)
[5] BASHE J R,DEMPSEY G,AKWANI I A.Critical Parameters for Grinding Large Sapphire Window Panels[C]//Proceedings of SPIE-The International Society for Optical Engineering,Orlando:SPIE,2007:654517.
[6] 肖晓兰,阎秋生,潘继生,等.超精密磁流变复合抛光技术研究进展[J].广东工业大学学报,2016,33(6):28.XIAO Xiaolan,YAN Qiusheng,PAN Jisheng,et al.A Review on Ultra-precision Compound Polishing Technology of Magnetorheological[J].Journal of Guangdong University of Technology,2016,33(6):28.(in Chinese)
[7] 潘继生,阎秋生,路家斌,等.集群磁流变平面抛光加工技术[J].机械工程学报,2014,50(1):205.PAN Jisheng,YAN Qiusheng,LU Jiabin,et al.Cluster Magnetorheological Effect Plane Polishing Technology[J].Journal of Mechanical Engineering,2014,50(1):205.(in Chinese)
[8] 董国正,胡皓,李圣怡,等.基于永磁体的小口径磁流变抛光装置设计与优化[J].纳米技术与精密工程,2015,13(4):251.DONG Guozheng,HU Hao,LI Shengyi,et al.Design and Optimization of Small Bore Magnetorheological Finishing Device for Permanent Magnet[J].Nanotechnology and Precision Engineering,2015,13(4):251.(in Chinese)
[9] 路家斌,孙世孔,阎秋生,等.磨料特性对InP 晶片集群磁流变抛光效果的影响[J].半导体制造技术,2019,44(1):32.LU Jiabin,SUN Shikong,YAN Qiusheng,et al.Effects of Abrasive Characteristics on the Cluster Magnetorheological Polishing of InP Wafer[J].Semiconductor Manufacturing Technologies,2019,44(1):32.(in Chinese)
[10] 肖强,陈刚.集群磁流变抛光参数对亚表面损伤深度的影响[J].光子学报,2018,47(1):75.XIAO Qiang CHEN Gang.Effect of Cluster Magnetorheological Finishing Parameters on Subsurface Damage Depth[J].Acta Photonica Sinica,2018,47(1):75.(in Chinese)
[11] 宋万里,马晋涛,胡志超,等.往复式磁流变抛光装置的设计与仿真研究[J].机械设计与制造,2019(2):104.SONG Wanli,MA Jintao,HU Zhichao,et al.Design and Simulation of Reciprocating Magnetorheological Polishing Device[J].Machinery Design & Manufacture,2019(2):104.(in Chinese)
[12] 白杨,张峰,李龙响,等.碳化硅基底改性硅表面的磁流变抛光[J].光学学报,2015,35(3):0322007.BAI Yang,ZHANG Feng,LI Longxiang,et al.Manufacture of Silicon Modification Layer on Silicon Carbide Surface by Magnetorheological Finishing[J].Acta Optica Sinica,2015,35(3):0322007.(in Chinese)
[13] 陈希,马忠鑫,程新龙.基于永磁体的抗磁性材料磁流变抛光装置研究[J].机电工程,2019,36(3):311.CHEN Xi,MA Zhongxin,CHENG Xinlong.Magnetorheological Polishing Apparatus for Diamagnetic Material Based on Permanent Magnets[J].Journal of Mechanical & Electrical Engineering,2019,36(3):311.(in Chinese)
[14] 王贵林,李完小,向纪邦.强光光学零件磁流变抛光误差的频谱特征与演变研究[J].航空精密制造技术,2019,55(1):6.WANG Guilin,LI Wanxiao,XIANG Jibang.Spectral Feature and Evolvement of Machining Error of High-power Optical Elements in Magnetorheological Finishing[J].Aviation Precision Manufacturing Technology,2019,55(1):6.(in Chinese)
[15] 郭美键,罗虎,王长兵,等.氧化锆陶瓷大抛光模磁流变抛光试验研究[J].表面技术,2018,47(7):28.GUO Meijian,LUO Hu,WANG Changbing,et al.Experimental Study on Magnetorheological Finishing Using Large Polishing Tool for Zirconia Ceramic Plane[J].Surface Technology,2018,47(7):28.(in Chinese)
[2] 余青,刘德福,陈涛.单晶蓝宝石衬底晶片的化学机械抛光工艺研究[J].表面技术,2017,46(3):253.YU Qing,LIU Defu,CHEN Tao.Chemico-mechanical Polishing Technique of Monocrystal Sapphire Substrate Wafer[J].Surface Technology,2017,46(3):253.(in Chinese)
[3] 赵欣,牛新环,王建超,等.不同抛光参数对蓝宝石衬底CMP质量的影响[J].微电子学,2018,48(2):274.ZHAO Xin,NIU Xinhuan,WANG Jianchao,et al.Effects of Different Polishing Parameters on the CMP Quality of Sapphire Substrate[J].Microelectronics,2018,48(2):274.(in Chinese)
[4] 钟敏,袁任江,李小兵,等.磨粒和抛光垫特性对蓝宝石超声化学机械抛光的影响[J].中国表面工程,2018,31(6):125.ZHONG Min,YUAN Renjiang,LI Xiaobing,et al.Effects of Abrasive Particles and Pads’ Characteristics on Ultrasonic Assisted Chemical Mechanical Polishing for Sapphire[J].China Surface Engineering,2018,31(6):125.(in Chinese)
[5] BASHE J R,DEMPSEY G,AKWANI I A.Critical Parameters for Grinding Large Sapphire Window Panels[C]//Proceedings of SPIE-The International Society for Optical Engineering,Orlando:SPIE,2007:654517.
[6] 肖晓兰,阎秋生,潘继生,等.超精密磁流变复合抛光技术研究进展[J].广东工业大学学报,2016,33(6):28.XIAO Xiaolan,YAN Qiusheng,PAN Jisheng,et al.A Review on Ultra-precision Compound Polishing Technology of Magnetorheological[J].Journal of Guangdong University of Technology,2016,33(6):28.(in Chinese)
[7] 潘继生,阎秋生,路家斌,等.集群磁流变平面抛光加工技术[J].机械工程学报,2014,50(1):205.PAN Jisheng,YAN Qiusheng,LU Jiabin,et al.Cluster Magnetorheological Effect Plane Polishing Technology[J].Journal of Mechanical Engineering,2014,50(1):205.(in Chinese)
[8] 董国正,胡皓,李圣怡,等.基于永磁体的小口径磁流变抛光装置设计与优化[J].纳米技术与精密工程,2015,13(4):251.DONG Guozheng,HU Hao,LI Shengyi,et al.Design and Optimization of Small Bore Magnetorheological Finishing Device for Permanent Magnet[J].Nanotechnology and Precision Engineering,2015,13(4):251.(in Chinese)
[9] 路家斌,孙世孔,阎秋生,等.磨料特性对InP 晶片集群磁流变抛光效果的影响[J].半导体制造技术,2019,44(1):32.LU Jiabin,SUN Shikong,YAN Qiusheng,et al.Effects of Abrasive Characteristics on the Cluster Magnetorheological Polishing of InP Wafer[J].Semiconductor Manufacturing Technologies,2019,44(1):32.(in Chinese)
[10] 肖强,陈刚.集群磁流变抛光参数对亚表面损伤深度的影响[J].光子学报,2018,47(1):75.XIAO Qiang CHEN Gang.Effect of Cluster Magnetorheological Finishing Parameters on Subsurface Damage Depth[J].Acta Photonica Sinica,2018,47(1):75.(in Chinese)
[11] 宋万里,马晋涛,胡志超,等.往复式磁流变抛光装置的设计与仿真研究[J].机械设计与制造,2019(2):104.SONG Wanli,MA Jintao,HU Zhichao,et al.Design and Simulation of Reciprocating Magnetorheological Polishing Device[J].Machinery Design & Manufacture,2019(2):104.(in Chinese)
[12] 白杨,张峰,李龙响,等.碳化硅基底改性硅表面的磁流变抛光[J].光学学报,2015,35(3):0322007.BAI Yang,ZHANG Feng,LI Longxiang,et al.Manufacture of Silicon Modification Layer on Silicon Carbide Surface by Magnetorheological Finishing[J].Acta Optica Sinica,2015,35(3):0322007.(in Chinese)
[13] 陈希,马忠鑫,程新龙.基于永磁体的抗磁性材料磁流变抛光装置研究[J].机电工程,2019,36(3):311.CHEN Xi,MA Zhongxin,CHENG Xinlong.Magnetorheological Polishing Apparatus for Diamagnetic Material Based on Permanent Magnets[J].Journal of Mechanical & Electrical Engineering,2019,36(3):311.(in Chinese)
[14] 王贵林,李完小,向纪邦.强光光学零件磁流变抛光误差的频谱特征与演变研究[J].航空精密制造技术,2019,55(1):6.WANG Guilin,LI Wanxiao,XIANG Jibang.Spectral Feature and Evolvement of Machining Error of High-power Optical Elements in Magnetorheological Finishing[J].Aviation Precision Manufacturing Technology,2019,55(1):6.(in Chinese)
[15] 郭美键,罗虎,王长兵,等.氧化锆陶瓷大抛光模磁流变抛光试验研究[J].表面技术,2018,47(7):28.GUO Meijian,LUO Hu,WANG Changbing,et al.Experimental Study on Magnetorheological Finishing Using Large Polishing Tool for Zirconia Ceramic Plane[J].Surface Technology,2018,47(7):28.(in Chinese)
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址：北京市海淀区学院路29号 邮编：100083 电话：办公室：(+86 10)66554848；文献借阅、咨询服务、科技查新：66554700 |