一种新型瞬变电磁仪发射电路设计
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摘要
为提高瞬变电磁仪测量的准确度,设计了基于FPGA的瞬变电磁仪发射电路。该电路采用EXB841模块设计驱动电路,实现对H桥路上下臂MOSFET的有效驱动;利用改进的H桥路设计及改变传统桥路的控制策略,实现对MOSFET的超短时间关断;采用RCD吸收保护电路降低尖峰电压干扰,改善发射电路输出波形。试验结果表明,该发射电路的发射信号过压仅为正常信号的1.33倍,振荡时间为500ns,下降沿时间为700ns,实现了发射电流的快速关断,且稳定性好。
A transmission circuit of transient electromagnetic instrument based on FPGA was designed in order to improve measurement accuracy of transient electromagnetic instrument.Drive circuit of the transmission circuit was designed with module EXB841to drive MOSFET located at up-down side of H-bridge,innovative H-bridge and control strategy realized very short turn-off time for MOSFET,and peak voltage interference was reduced by use of RCD protect circuit to improve output signal waves of the transmission circuit.The experiment results show that overvoltage of emission signal of the transient electromagnetic transmission circuit is only 1.33times of the normal voltage,and the time for oscillating and falling edge are 500ns and 700ns,separately,which can realize fast turn-off and has good stability.
A transmission circuit of transient electromagnetic instrument based on FPGA was designed in order to improve measurement accuracy of transient electromagnetic instrument.Drive circuit of the transmission circuit was designed with module EXB841to drive MOSFET located at up-down side of H-bridge,innovative H-bridge and control strategy realized very short turn-off time for MOSFET,and peak voltage interference was reduced by use of RCD protect circuit to improve output signal waves of the transmission circuit.The experiment results show that overvoltage of emission signal of the transient electromagnetic transmission circuit is only 1.33times of the normal voltage,and the time for oscillating and falling edge are 500ns and 700ns,separately,which can realize fast turn-off and has good stability.
引文
[1]付志红,周雒维.瞬变电磁法高动态电流陡脉冲发射电路研究[J].中国电机工程学报,2008,28(33):44-48.
[2]李俊唐,付志红,苏向丰,等.梯形脉冲瞬变电磁发射机[J].电测与仪表,2012,49(2):72-75.
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[4]丁祖军,郑建勇,梅军,等.基于EXB841的IGBT驱动电路设计及优化[J].电力自动化设备,2004,24(6):37-40.
[5]孙佃升,白连平.一种基于EXB841的IGBT驱动与保护电路设计[J].微电机,2007,40(6):98-100.
[6]徐立忠.基于ATEM-Ⅱ的改进型电磁法发射系统设计与实现[D].长春:吉林大学,2008.
[7]徐晓彬.大功率全桥变流器次级整流吸收电路研究[J].电力电子技术,2009,43(1):41-42.
[2]李俊唐,付志红,苏向丰,等.梯形脉冲瞬变电磁发射机[J].电测与仪表,2012,49(2):72-75.
[3]田颖,陈培红,聂圣芳,等.功率MOSFET驱动保护电路设计与应用[J].电力电子技术,2005,39(1):73-74.
[4]丁祖军,郑建勇,梅军,等.基于EXB841的IGBT驱动电路设计及优化[J].电力自动化设备,2004,24(6):37-40.
[5]孙佃升,白连平.一种基于EXB841的IGBT驱动与保护电路设计[J].微电机,2007,40(6):98-100.
[6]徐立忠.基于ATEM-Ⅱ的改进型电磁法发射系统设计与实现[D].长春:吉林大学,2008.
[7]徐晓彬.大功率全桥变流器次级整流吸收电路研究[J].电力电子技术,2009,43(1):41-42.