强反型区下纳米MOSFET的射频噪声机理分析
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摘要
为了有效地表征纳米MOSFET强反型区下的射频噪声特性,研究了其噪声建模的方法。在分析45nm MOSFET射频小信号等效电路参数提取结果的基础上,建立了该器件漏极电流噪声的简洁模型。该模型完整地表征了决定45nm器件噪声机理的三个组成部分:本征漏极电流噪声、栅极管脚寄生电阻热噪声和栅漏衬底寄生电磁耦合噪声。噪声测量在验证所建模型准确性和精度的同时,还表明:45nm MOSFET的本征漏极电流噪声为受抑制的散粒噪声,并且随着栅源偏压的降低受抑制性逐渐减弱直至消失。
In order to effectively characterize the RF noise characteristics in the strong inversion region of nanoscale MOSFET,the noise modeling method is studied.Based on the analysis of extracted results of radio frequency small-signal equivalent circuit parameters of 45 nm MOSFET,a compact model for the MOSFET's drain current noise is proposed.This model fully describes three kinds of main physical sources that determine the noise mechanism of 45 nm MOSFET,including intrinsic drain current noise,thermal noise induced by the gate parasitic resistance,and coupling thermal noise induced by substrate parasitic effect.The accuracy of the proposed model is verified by noise measurements,and the intrinsic drain current noise of 45 nm MOSFET is proved to be the suppressed shot noise,and with the decrease of the gate voltage,the suppressed degree gradually decreases until it vanishes.
In order to effectively characterize the RF noise characteristics in the strong inversion region of nanoscale MOSFET,the noise modeling method is studied.Based on the analysis of extracted results of radio frequency small-signal equivalent circuit parameters of 45 nm MOSFET,a compact model for the MOSFET's drain current noise is proposed.This model fully describes three kinds of main physical sources that determine the noise mechanism of 45 nm MOSFET,including intrinsic drain current noise,thermal noise induced by the gate parasitic resistance,and coupling thermal noise induced by substrate parasitic effect.The accuracy of the proposed model is verified by noise measurements,and the intrinsic drain current noise of 45 nm MOSFET is proved to be the suppressed shot noise,and with the decrease of the gate voltage,the suppressed degree gradually decreases until it vanishes.
引文
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[13]李博,王军.45nm MOSFET毫米波小信号等效电路模型参数提取技术[J].强激光与粒子束,2019,31:024101.(Li Bo,Wang Jun.Parameter extraction technique of millimeter wave small-signal equivalent circuit model of 45nm MOSFET.High Power Laser and Particle Beams,2019,31:024101)
[14]Lee C I,Lin W C,Lin Y T.An improved cascade based noise de-embedding method for on-wafer noise parameter measurement[J].IEEETrans Electron Devices Lett,2015,36(4):291-293.
[15]Chan L H K,Yeo K S,Chew K W J,et al.MOSFET drain current noise modeling with effective gate overdrive and junction noise[J].IEEE Trans Electron Device Lett,2012,33(8):1117-1119.
[2]Wang S C,Su P,Chen K M,et al.Comprehensive noise characterization and modeling for 65nm MOSFETs[J].IEEE Trans Microw Theory Tech,2010,58(4):740-746.
[3]Antonopoulos A,Bucher M,Papathanasiou K,et al.CMOS small-signal and thermal noise modeling at high frequencies[J].IEEE Trans E-lectron Devices,2013,60(11):3727-3733.
[4]Chan L H K,Yeo K S,Chew K W J,et al.High-frequency noise modeling of MOSFETs for ultra low-voltage RF applications[J].IEEETrans Microw Theory Techn,2015,63(1):141-153.
[5]Chalkiadaki M A,Enz C C.RF small-signal and noise modeling including parameter extraction of nanoscale MOSFETs from weak to strong inversion[J].IEEE Trans Microw Theory Techn,2015,63(7):2173-2184.
[6]Ong S N,Yeo K S,Chew W J.Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOS-FETs[J].Solid-State Electronics,2012,72:32-37.
[7]Smit G D J,Scholten A J,Pijper R M T,et al.RF-noise modeling in advanced CMOS technologies[J].IEEE Trans Electron Devices,2014,61(2):245-254.
[8]Jeon J,Lee J,Kim J,et al.The first observation of shot noise characteristic in 10-nm scale MOSFETs[C]//2009Symposium on VLSITechnology.2009:48-49.
[9]Mahajan V M,Patalay P R,Jindal R P,et al.A physical understanding of RF noise in bulk nMOSFETs with channel lengths in the nanometer regime[J].IEEE Trans Electron Devices,2012,59(1):197-205.
[10]Andersson S,Svensson C.Direct experimental verification of shot noise in short channel MOS transistors[J].Electron Lett,2005,41(15):869-870.
[11]Spathis C,Birbas A,Georgakopoulou K.Semi-classical noise investigation for sub-45nm metal-oxide-semiconductor field effect[J].AIPAdvances,2015,5:087114.
[12]Tsididis Y.Operation and modeling of the MOS transistor[M].Boston,M A:WCB/McGraw-Hill,1999:66.
[13]李博,王军.45nm MOSFET毫米波小信号等效电路模型参数提取技术[J].强激光与粒子束,2019,31:024101.(Li Bo,Wang Jun.Parameter extraction technique of millimeter wave small-signal equivalent circuit model of 45nm MOSFET.High Power Laser and Particle Beams,2019,31:024101)
[14]Lee C I,Lin W C,Lin Y T.An improved cascade based noise de-embedding method for on-wafer noise parameter measurement[J].IEEETrans Electron Devices Lett,2015,36(4):291-293.
[15]Chan L H K,Yeo K S,Chew K W J,et al.MOSFET drain current noise modeling with effective gate overdrive and junction noise[J].IEEE Trans Electron Device Lett,2012,33(8):1117-1119.