摘要
设计了一种光控可调谐且具有多个吸收频带的太赫兹超材料吸收器,并采用CST 2014仿真软件对该吸收器的结构进行了仿真。为实现吸收器从单频带到四频带的完美吸收,在吸收器衬底上设计了4个不同长度的金属条。为深入研究该吸收器的传输特性,分别对该吸收器在4个吸收峰处的电场分布进行了仿真。为了进一步实现该吸收器的光控可调谐,利用抽运激光照射填充在两对金属条中间的光敏介质。仿真结果表明,该吸收器在4个吸收峰处的吸收率均超过了95%,共振机理为4个不同长度的金属条所对应共振频率的线性叠加。该吸收器实现了从四频带到双频带的调控。
An optically tunable terahertz metamaterial absorber with multiple absorption bands is designed.The CST 2014 simulation software is used to simulate the structure of the designed metamaterial absorber.We designed four metallic bars with varied lengths on the substrate to realize that the perfect absorption of the designed metamaterial absorber which can be controlled from single-band to dual-band.The electric field distributions at four absorption peaks of the metamaterial absorber is simulated to further study the transmission characteristics of the metamaterial absorber.The photosensitive medium in the gap of two metallic bars is further irradiated by apump laser to realize the optically-controlled tuning of the absorber.The simulation results show that the absorptivity of the designed metamaterial absorber at four absorption peaks all exceed 95%.The resonance mechanism of the designed structure is attributed to the overlapping of four resonance frequencies corresponding to the four metallic bars with different lengths.Hence,the perfect absorber can be dynamically controlled from four-band to dual-band.
引文
[1] Tonouchi M.Cutting-edge terahertz technology[J].Nature Photonics,2007,1(2):97-105.
[2] Siegel P H. Terahertz technology[J]. IEEE Transactions on Microwave Theory and Techniques,2002,50(3):910-928.
[3] Xu J Z,Zhang X C.Terahertz science technology and application[M].Beijing:Peking University Press,2006:1-5.许景周,张希成.太赫兹科学技术和应用[M].北京:北京大学出版社,2006:1-5.
[4] Wang J L,Zhang B Z,Duan J P,et al.Flexible dual-stopband terahertz metamaterial filter[J].Acta Optica Sinica,2017,37(10):1016001.王俊林,张斌珍,段俊萍,等.柔性双阻带太赫兹超材料滤波器[J].光学学报,2017,37(10):1016001.
[5] ArikK, AbdollahRamezaniS, KhavasiA.Polarization insensitive and broadband terahertz absorber using graphene disks[J]. Plasmonics,2017,12(2):393-398.
[6] LüJ,Yuan R Y,Song X M,et al.Broadband polarization-insensitive terahertz absorber based on heavily doped silicon surface relief structures[J].Journal of Applied Physics,2015,117(1):013101.
[7] Fardoost A,Vanani F G,Amirhosseini A,et al.Design of a multilayer graphene-based ultrawideband terahertz absorber[J]. IEEE Transactions on Nanotechnology,2017,16(1):68-74.
[8] Wang B X,Zhai X,Wang G Z,et al.A novel dualband terahertz metamaterial absorber for a sensor application[J].Journal of Applied Physics,2015,117(1):014504.
[9] Gao H,Yan F P,Tan S Y,et al.Design of ultrathin broadband terahertz metamaterial absorber based on patterned graphene[J].Chinese Journal of Lasers,2017,44(7):0703024.高红,延凤平,谭思宇,等.基于有图案石墨烯的超薄宽带太赫兹超材料吸收体的设计[J].中国激光,2017,44(7):0703024.
[10] Hao H G,Ding T Y,Luo W,et al.Design of novel broadbandmicrowaveabsorberbasedon metamaterials[J]. Laser&Optoelectronics Progress,2018,55(6):061604.郝宏刚,丁天玉,罗伟,等.基于超材料的新型宽带微波吸波器设计[J].激光与光电子学进展,2018,55(6):061604.
[11] Liu S,Chen H B,Cui T J.A broadband terahertz absorber using multi-layer stacked bars[J].Applied Physics Letters,2015,106(15):151601.
[12] Wang B X,Zhai X,Wang G Z,et al.Design of a four-bandandpolarization-insensitiveterahertz metamaterial absorber[J].IEEE Photonics Journal,2015,7(1):1-8.
[13] Ye Y Q, Jin Y, He S L. Omnidirectional,polarization-insensitive and broadband thin absorber in the terahertz regime[J].Journal of the Optical Society of America B,2010,27(3):498.
[14] Zhou J F,Zhang L,Tuttle G,et al.Negative index materials using simple short wire pairs[J].Physical Review B,2006,73(4):041101.
[15] Zhou J F,Economon E N,Koschny T,et al.Unifying approach to left-handed material design[J].Optics Letters,2006,31(24):3620-3622.
[16] Manceau J M,Shen N H, Kafesaki M,et al.Dynamic response of metamaterials in the terahertz regime:blueshift tunability and broadband phase modulation[J].Applied Physics Letters,2010,96(2):021111.
[17] Dai X Y,Xiang Y J,Wen S C,et al.Thermally tunableandomnidirectionalterahertzphotonic bandgap in the one-dimensional photonic crystals containing semiconductor InSb[J].Journal of Applied Physics,2011,109(5):053104.
[18] Jiang X Q,Yang J Y,Zhan H Z,et al.Photoninduced total-internal-reflection all-optical switches[J].IEEE Photonics Technology Letters,2004,16(2):443-445.