摘要
采用高效多晶半熔工艺,实验对比了隔热笼开度为2 cm和8 cm两种工艺下的籽晶界面保留及硅锭内部硬质点和少子寿命的分布。结果表明,采用隔热笼开度为8 cm工艺,避免了硅料熔化过程中坩埚底部籽晶熔化而导致引晶效果不佳的问题,保证了硅锭较高的效率。
The high-efficiency polycrystalline silicon semi-melting technology was adopted, the retain of seeds crystal interface, the inner hard spots within the silicon ingot and the lifetime distribution of minority carrier in the two kinds of processes of the heat insulation cage of 2 cm and 8 cm were compared. The results show that the opening of the heat insulation cage of 8 cm avoid the melting question of seed crystal materials which will lead to poor performance of crystal growth of guidance during the progress of silicon crystalline growth at the bottom of crucible during the process of polycrystalline silicon melting, and it also ensures the high efficiency of silicon ingot.
引文
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