不同激光波长和功率下的Bi_2Se_3单晶Raman光谱
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摘要
采用改良Bridgman法制备出优质Bi_2Se_3单晶。X射线衍射仪和扫描电子显微镜测试结果显示,晶体沿[001]方向生长,结晶性能好。采用两种波长(532和785 nm)及不同功率的激光光源,对Bi_2Se_3单晶体(003)面进行了Raman光谱研究。结果表明:在功率较高时,随着激光功率的增加,Raman特征峰系统性红移和半高宽增大,此时峰位红移是由激光功率的增加,测试区域温度升高,晶格膨胀和声子间的非简谐振动耦合共同导致;在功率较低时,热膨胀可能是造成Raman峰位红移的主要原因。
High-quality Bi_2Se_3 single crystal was prepared by a modified Bridgman method.Based on the analysis by X-ray diffraction and scanning electron microscopy, the crystal is grown along the [001] direction with a good crystallinity.The Raman spectra of Bi_2Se_3 single crystal(003) face were investigated by using two wavelengths(i.e., 532 nm and 785 nm) and different power laser sources.At a high power, the systematic red shift of Raman characteristic peaks is caused due to the combination of lattice expansion and non-harmonic vibration coupling between phonons.At a low power, the thermal expansion may be the main reason for the red shift of the Raman peak.
High-quality Bi_2Se_3 single crystal was prepared by a modified Bridgman method.Based on the analysis by X-ray diffraction and scanning electron microscopy, the crystal is grown along the [001] direction with a good crystallinity.The Raman spectra of Bi_2Se_3 single crystal(003) face were investigated by using two wavelengths(i.e., 532 nm and 785 nm) and different power laser sources.At a high power, the systematic red shift of Raman characteristic peaks is caused due to the combination of lattice expansion and non-harmonic vibration coupling between phonons.At a low power, the thermal expansion may be the main reason for the red shift of the Raman peak.
引文
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[2]ZHANGH J,LIU C X,QI X L,et al.Topological insulators in Bi2Se3,Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface[J].Nat Phys,2009,5(6):438-442.
[3]QIU X,AUSTIN L N,MUSCARELLA P A,et al.Nanostructured Bi2Se3 films and their thermoelectric transport properties[J].Angew Chem,2006,45(34):5656-5659.
[4]张敏.拓扑绝缘体Bi2Se3引入磁序的研究[D].四川:西南交通大学,2015.ZHANG M.Introducing magnetic ordering in topological insulator Bi2Se3(in Chinese,dissertation).Sichuan:Southwest Jiaotong University,2015.
[5]韩茹,樊晓桠,杨银堂.n-SiC拉曼散射光谱的温度特性[J].物理学报,2010,59(6):4261-4266.HAN Ru,FAN X Y,YANG Y T.Acta Phys Sin(in Chinese).2010,59(6):4261-4266.
[6]RAO A M,RITCHER E,BANDOW S,et al.Diameter-selective Raman scattering from vibrational modes in carbon nanotubes[J].Science,1997,275:187-191.
[7]MAFRA D L,KONG J,SATO K,et al.Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene:A different approach to assign phonon combination modes[J].Phys Rev B,2012,86(19):5434.
[8]ZHANG J,PENG Z P,SONI A,et al.Raman spectroscopy of few-quintuple layer topological insulator Bi2Se3 nanoplatelets[J].Nano Lett,2011,11(6):2407-2414.
[9]GNEZDILOV V,PASHKEVICH Y G,BERGER H,et al.Helical fluctuations in the Raman response of the topological insulator Bi2Se3[J].Phys Rev B,2011,84(19):5118.
[10]KIM Y,CHEN X,WANG Z,et al.Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3[J].Appl Phys Lett,2012,100(7):3045.
[11]IRFAN B,SAHOO S,GAUR A P S,et al.Temperature dependent Raman scattering studies of three dimensional topological insulators Bi2Se3[J].J Appl Phys,2014,115(17):3506(1-6).
[12]CHANDRAMOHAN P,SRINIVASAN M P,VELMURUGAN S,et al.Cation Distribution and Particle size effect on Raman spectrum of CoFe2O4[J].J Solid State Chem,2012,184(1):89-96.
[13]魏占涛,张敏,杨辉.In掺杂Bi2Se3晶体的电性能与形貌[J].硅酸盐学报,2017,45(7):961-967.WEI Z T,YANG H,ZHANG M.J Chin Ceram Soc,2017,45(7):961-967.
[14]RICHTER W,BECKER C H R.A Raman and far-infrared investigation of phonons in the rhombohedral V2-VI3compoundsBi2Te3,Bi2Se3,Sb2Te3 and Bi2(Te1-x Sex)3(0
[16]张树霖.拉曼光谱学与低维纳米半导体[M].北京:科学出版社,2008:285-290.
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