Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

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英文篇名：Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 作者：张静 ; 吕红亮 ; 倪海桥 ; 杨施政 ; 崔晓然 ; 牛智川 ; 张义门 ; 张玉明 英文作者：Jing Zhang;Hongliang Lv;Haiqiao Ni;Shizheng Yang;Xiaoran Cui;Zhichuan Niu;Yimen Zhang;Yuming Zhang;School of Microelectronics, Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences; 英文关键词：InAs;;Si;;high electron mobility;;growth temperature;;InGaAlAs metamorphic buffer 中文刊名：ZGWL 英文刊名：中国物理B 机构：School of Microelectronics Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology;State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences; 出版日期：2019-02-15 出版单位：Chinese Physics B 年：2019 期：v.28 基金：Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301);; National Defense Innovation Program,China(Grant No.48xx4);; the National Key Technologies Research and Development Program of China(Grant No.2018YFA03xxx01);; the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ2017xxx2);; the National Natural Science Foundation of China(Grant No.6150xxx6) 语种：英文; 页：ZGWL201902059 页数：6 CN：02 ISSN：11-5639/O4 分类号：428-433

摘要

The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm~2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm~2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.
        The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm~2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm~2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.

引文

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