摘要
为了实现对3~5μm中红外光的完美吸收,仿真设计了一种基于W/VO2周期性纳米盘阵列的可调中红外宽频吸收器,利用时域有限差分法模拟计算了结构参数对吸收器性能的影响.在最佳结构参数条件下,吸收器表现出偏振无关和广角吸收的特性,在3.1~3.6μm范围内吸收率达99%以上,峰值吸收率为99.99%.低温时入射光的磁场被束缚在各单元VO2介质层的中心并得到完美吸收;高温时VO2发生相变表现为金属相,抑制吸收,高低温的吸收率差值可达78.8%.该吸收器有效弥补了传统吸收器吸收频带窄、吸收率不可调的缺陷,对中红外光电器件的应用有参考价值.
In order to realize the perfect absorption of 3~5μm mid-infrared wave,a tunable mid-infrared broadband absorber based on W/VO2 periodic nanodisk array is designed in this paper.The effects of structural parameters on the absorption performance are calculated by the Finite-Difference TimeDomain.With the optimal structural parameters,the absorber is polarization-independent and exhibits wide-angle absorption.The absorptivity is over 99% in the range of 3.1~3.6μm,and the maximum absorptivity is 99.99%.At low temperature,the absorber presents a perfect absorption because the magnetic field is trapped in the center of each cell's VO2 dielectric layer.While at high temperature,the VO2 film is converted to metallic phase in which the absorber displays a strong reflection.The absorption difference between high and low temperature is up to 78.8%.The absorber effectively compensates for the shortcomings of the traditional absorber with a narrow absorption band and inability to regulate the absorptivity.The result of this study is of valuable reference to the application of mid-infrared optoelectronic devices.
引文
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