915nm半导体激光器新型腔面钝化工艺
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摘要
针对半导体激光器腔面光学灾变损伤的发生机制,设计了一种单管芯半导体激光器腔面真空解理钝化工艺方法。在真空中解理并且直接对半导体激光器腔面蒸镀钝化膜,提出用ZnSe材料作为单管芯半导体激光器真空解理工艺的钝化膜材料,发现利用真空解理钝化工艺方法和ZnSe材料作为钝化膜可以使器件输出功率提高23%。通过电致发光(EL)对半导体激光器腔面损伤机理进行分析。进一步说明对915 nm半导体激光器制备工艺中引入真空解理钝化工艺技术并且选择ZnSe作为钝化膜可以有效保护半导体激光器腔面,提高器件可靠性。
Aiming at the mechanism of catastrophic optical damage of semiconductor laser cavity surface,a single-chip semiconductor laser cavity surface vacuum cleavage passivation process was designed. The cleavage process in vacuum and direct evaporation of passivation film on the surface of semiconductor laser cavity was proposed. Using ZnSe material as the passivation film material for the vacuum cleavage process of single-die semiconductor laser, it was found that the vacuum cleavage passivation process and ZnSe material could be used as the passivation film to increase the output power of the device by 23%.The mechanism of semiconductor laser cavity surface damage was analyzed by electroluminescence(EL).It is further explained that the introduction of vacuum cleavage passivation technology in the preparation process of 915 nm semiconductor laser and the selection of ZnSe as the passivation film can effectively protect the cavity surface of the semiconductor laser and improve device reliability.
Aiming at the mechanism of catastrophic optical damage of semiconductor laser cavity surface,a single-chip semiconductor laser cavity surface vacuum cleavage passivation process was designed. The cleavage process in vacuum and direct evaporation of passivation film on the surface of semiconductor laser cavity was proposed. Using ZnSe material as the passivation film material for the vacuum cleavage process of single-die semiconductor laser, it was found that the vacuum cleavage passivation process and ZnSe material could be used as the passivation film to increase the output power of the device by 23%.The mechanism of semiconductor laser cavity surface damage was analyzed by electroluminescence(EL).It is further explained that the introduction of vacuum cleavage passivation technology in the preparation process of 915 nm semiconductor laser and the selection of ZnSe as the passivation film can effectively protect the cavity surface of the semiconductor laser and improve device reliability.
引文
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[8] Wu Hualing, Guo Linhui, Yu Junhong, et al. Design of500 W-output fiber-coupled diode laser module[J]. Infrared and Laser Engineering, 2017, 46(10):1005005.(in Chinese)吴华玲,郭林辉,余俊宏,等. 500 W半导体激光器光纤耦合输出模块设计[J].红外与激光工程, 2017, 46(10):1005005.
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[11] Liu Bin, Liu Yuanyuan, Cui Bifeng. Long-term aging and failure analysis for 980 nm laser diodes[J]. Laser&Optoelectronics Progress, 2012, 49:091404.(in Chinese)刘斌,刘媛媛,崔碧峰,等. 980半导体激光器长期老化结果及失效分析[J].激光与光电子学进展, 2012, 49:091404.
[12] Christofer S, Yangting S, Peter B, et al. Nitride facet passivation raises reliability, COMD and enables high temperature operation of InGaAsP, InGaAs and InAlGaAs lasers[C]//SPIE, 2005, 5711:189-200.
[13] Brennan B, Milojevic M, Hinkle C L, et al. Optimisation of the ammonium sulphide(NH4)2S passivation process on In0.53Ga0.47As[J]. Applied Surface Science, 2011, 257:4082-4090.
[14] Chand N, Hobson W S, De Jong J F. ZnSe for mirror passiwation of high power Ga As based lasers[J]. Electronics Letter, 1996, 32(17):1595-1596.
[15] Ziegler M, Tomm W, Elsaesser T. Imaging catastrophic optical mirror damage in high-power diode lasers[J]. Journal of Electronic Materials, 2010, 39(6):709-714.
[16] Souto J, Pura J L, Torres A. Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes[J]. Microelectronics Reliability, 2016, 64:627-630.
[17] Gong Xueqin, Feng Shiwei, Yang Hongwei. Degradation analysis of facet coating in Ga As-based high-power laser diodes[J]. IEEE Transactions on Device and Materials Reliability, 2015, 15(3):359-362.
[2] Xu Zhengwen, Qu Yi, Wang Yuzhi, et al. Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers[J]. Infrared and Laser Engineering, 2014, 43(4):1094-1098.(in Chinese)徐正文,曲轶,王钰智,等.高功率980 nm非对称宽波导半导体激光器设计[J].红外与激光工程, 2014, 43(4):1094-1098.
[3] Li Zhi, Yao Shun, Gao Xiangyu, et al. Calculation for the fast axis beam quality of the laser diode stack[J]. Infrared and Laser Engineering, 2015, 44(1):85-90.(in Chinese)李峙,尧舜,高祥宇,等.半导体激光器堆栈快轴光束质量计算的研究[J].红外与激光工程, 2015, 44(1):85-90.
[4] Li Zaijin, Hu Liming, Wang Ye, et al. Fabrication of 808 nmAl-containing semiconductor laser diode high damage threshold facet coating[J]. Infrared and Laser Engineering,2010, 39(6):1034-1037.(in Chinese)李再金,胡黎明,王烨,等. 808 nm掺铝半导体激光高损伤阈值腔面膜制备[J].红外与激光工程, 2010, 39(6):1034-1037.
[5] Hai Yina, Zou Yonggang, Tian Kun, et al. Research progress of horizontal cavity surface emitting semiconductor lasers[J].Chinese Optics, 2017, 10(2):195-206.(in Chinese)海一娜,邹永刚,田锟,等.水平腔面发射半导体激光器研究进展[J].中国光学, 2017, 10(2):195-206.
[6] Liu Youqiang, Cao Yinhua, Li Jing, et al. 5 kW fiber coupling diode laser for laser processing[J]. Optics and Precision Engineering, 2015, 23(5):1279-1287.(in Chinese)刘友强,曹银花,李景,等.激光加工用5 kW光纤耦合半导体激光器[J].光学精密工程, 2015, 23(5):1279-1287.
[7] Zhu Hongbo, Hao Mingming, Liu Yun, et al. 808 nm high brightness module of fiber coupled diode laser[J]. Optics and Precision Engineering, 2012, 20(8):1684-1689.(in Chinese)朱洪波,郝明明,刘云,等. 808 nm高亮度半导体激光器光纤耦合器件[J].光学精密工程, 2012, 20(8):1684-1689.
[8] Wu Hualing, Guo Linhui, Yu Junhong, et al. Design of500 W-output fiber-coupled diode laser module[J]. Infrared and Laser Engineering, 2017, 46(10):1005005.(in Chinese)吴华玲,郭林辉,余俊宏,等. 500 W半导体激光器光纤耦合输出模块设计[J].红外与激光工程, 2017, 46(10):1005005.
[9] Kong Zhenzhen, Cui Bifeng, Huang Xinzhu, et al. Study on performance improvement of high power semiconductor lasers[J]. Laser&Optoelectronics Progress, 2017, 54:071403.(in Chinese)孔真真,崔碧峰,黄欣竹,等.大功率半导体激光器性能改善的研究[J].激光与光电子学进展, 2017, 54:071403.
[10] He Xin, Cui Bifeng, Liu Menghan. Research on nitrogen passivation for high power semiconductor lasers[J]. Laser&Infrared, 2016, 46(7):805-808.(in Chinese)何新,崔碧峰,刘梦涵,等.大功率半导体激光器腔面氮钝化的研究[J].激光与红外, 2016, 46(7):805-808.
[11] Liu Bin, Liu Yuanyuan, Cui Bifeng. Long-term aging and failure analysis for 980 nm laser diodes[J]. Laser&Optoelectronics Progress, 2012, 49:091404.(in Chinese)刘斌,刘媛媛,崔碧峰,等. 980半导体激光器长期老化结果及失效分析[J].激光与光电子学进展, 2012, 49:091404.
[12] Christofer S, Yangting S, Peter B, et al. Nitride facet passivation raises reliability, COMD and enables high temperature operation of InGaAsP, InGaAs and InAlGaAs lasers[C]//SPIE, 2005, 5711:189-200.
[13] Brennan B, Milojevic M, Hinkle C L, et al. Optimisation of the ammonium sulphide(NH4)2S passivation process on In0.53Ga0.47As[J]. Applied Surface Science, 2011, 257:4082-4090.
[14] Chand N, Hobson W S, De Jong J F. ZnSe for mirror passiwation of high power Ga As based lasers[J]. Electronics Letter, 1996, 32(17):1595-1596.
[15] Ziegler M, Tomm W, Elsaesser T. Imaging catastrophic optical mirror damage in high-power diode lasers[J]. Journal of Electronic Materials, 2010, 39(6):709-714.
[16] Souto J, Pura J L, Torres A. Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes[J]. Microelectronics Reliability, 2016, 64:627-630.
[17] Gong Xueqin, Feng Shiwei, Yang Hongwei. Degradation analysis of facet coating in Ga As-based high-power laser diodes[J]. IEEE Transactions on Device and Materials Reliability, 2015, 15(3):359-362.