势垒材料对GaN基异质结电学特性的影响研究
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摘要
基于势垒材料分别为Al_(0.27)Ga_(0.73)N和In_(0.17)Al_(0.83)N的GaN基异质结肖特基二极管(SBD),研究了GaN基异质结的漏电流输运机制、二维电子气密度和反向击穿电压等重要电学特性。结果表明,AlGaN/GaN SBD的反向电流主要由Frenkel-Poole(FP)发射机制主导,而InAlN/GaN SBD的反向电流在低电场下表现为FP发射电流,在高电场下则表现为Fowler-Nordheim隧穿电流。InAlN/GaN SBD的异质界面二维电子气密度明显高于AlGaN/GaN SBD,但是InAlN层存在高密度的缺陷,导致InAlN/GaN SBD的反向漏电流较大,且反向击穿电压较低。
Some important electrical characteristics of GaN based heterojunction Schottky barrier diode(SBD), including the leakage current transport mechanism, the density of two-dimensional electron gas and the reverse breakdown voltage, were comprehensively investigated on the basis of different barrier materials of Al_(0.27)Ga_(0.73)N and In_(0.17)Al_(0.83)N. The results indicated that the reverse current of AlGaN/GaN SBD was mainly dominated by Frenkel-Poole(FP) emission, while for InAlN/GaN SBD, its reverse current was governed by low-field FP emission and high-field Fowler-Nordheim tunneling. Although the heterojunction interface of InAlN/GaN SBD could induce obviously higher density of two-dimensional electron gas than that of AlGaN/GaN SBD, InAlN/GaN SBD had the relatively larger reverse leakage current and lower reverse breakdown voltage than AlGaN/GaN SBD due to the higher density of defects in the InAlN layer.
Some important electrical characteristics of GaN based heterojunction Schottky barrier diode(SBD), including the leakage current transport mechanism, the density of two-dimensional electron gas and the reverse breakdown voltage, were comprehensively investigated on the basis of different barrier materials of Al_(0.27)Ga_(0.73)N and In_(0.17)Al_(0.83)N. The results indicated that the reverse current of AlGaN/GaN SBD was mainly dominated by Frenkel-Poole(FP) emission, while for InAlN/GaN SBD, its reverse current was governed by low-field FP emission and high-field Fowler-Nordheim tunneling. Although the heterojunction interface of InAlN/GaN SBD could induce obviously higher density of two-dimensional electron gas than that of AlGaN/GaN SBD, InAlN/GaN SBD had the relatively larger reverse leakage current and lower reverse breakdown voltage than AlGaN/GaN SBD due to the higher density of defects in the InAlN layer.
引文
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[2] FU L H,LU H,LIU X Y,et al.High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor [J].Chin Phys B,2012,21(10):512-515.
[3] CHEN W W,MA X H,HOU B,et al.The degradation mechanism of an AIGaN/GaN high electron mobility transistor under step-stress [J].Chin Phys B,2013,22(10):508-511.
[4] MENEGHINI M,CIBIN G,BERTIN M,et al.OFF-state degradation of AlGaN/GaN power HEMTs:experimental demonstration of time-dependent drain-source breakdown [J].IEEE Trans Elec Dev,2014,61(6):987-1992.
[5] KUZMIK J.Power electronics on InAlN/(In)GaN:prospect for a record performance [J].IEEE Elec Dev Lett,2001,22(11):510-512.
[6] ZHOU Q,YANG S,CHEN W J,et al.High voltage InAlN/GaN HEMTs with nonalloyed source/drain for RF power applications [J].Sol Sta Elec,2014,91(1):19-23.
[7] ARULKUMARAN S,RANJAN K,NG G I,et al.High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate [J].IEEE Elec Dev Lett,2014,35(10):992-994.
[8] FRENKEL J.On pre-breakdown phenomena in insulators and electronic semi-conductors [J].Phys Rev,1938,54(8):647-648.
[9] BRIERI O,BARLA K,HALIMAOUI A,et al.Oscillatory behavior of the tunneling current in ultra thin gate dielectrics:influence of various physical and technological parameters [J].Sol Sta Elec,1997,41(7):987-990.