不同粒径磨料对蓝宝石晶片及其抛光过程的影响
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摘要
采用不同粒径的W28和W7碳化硼(B_4C)磨料对蓝宝石晶片进行研磨和化学机械抛光。研究了不同粒径的B_4C磨料对蓝宝石晶片研磨和化学机械抛光后的移除率、粗糙度、平坦度、弯曲度、翘曲度等参数的影响。结果表明:W28和W7的磨料有不同的研磨和抛光性能,在相同的加工条件下,使用W28的B_4C磨料,移除速率较快,但研磨所得蓝宝石晶片的损伤层较深,单面抛光20μm不足以去除其损伤层,抛光后表面划痕较多,粗糙度较大(R_a=1.319 nm,R_t=2.584 nm),表面有明显起伏;而W7磨料的移除速率慢,研磨时间长,在单面抛光移除20μm后其损伤层全部移除,抛光所得蓝宝石晶片平坦度略佳,抛光表面平整,粗糙度较小(R_a=0.194 nm,R_t=0.361 nm),无明显起伏,表面质量相对较高,适于精修平坦度。
The sapphire wafer was grinded and polished by different particle size of the B_4C abrasive including W28 and W7.The influence of B_4C abrasive with different particle size on the removal rate,roughness,flatness,bending degree and warpage of sapphire wafer were investigated.The results show that the abrasives of W28 and W7 have different polishing performances.Under the same processing conditions,the removal rate of B_4C is higher than that of W28.However,the roughness of the sapphire wafer with W28 is greater and the grinding damage layer is deeper(i.e.,Ra=1.319 nm,and Rt=2.584 nm).The removal rate of W7 is lower,the damage layer is removed(i.e.,R_a=0.194 nm,and R_t=0.361 nm),the surface quality is high,which is suitable for finishing flatness,after removal of 20 μm.The surface roughness of the finished sapphire wafer is better than that of W28.
The sapphire wafer was grinded and polished by different particle size of the B_4C abrasive including W28 and W7.The influence of B_4C abrasive with different particle size on the removal rate,roughness,flatness,bending degree and warpage of sapphire wafer were investigated.The results show that the abrasives of W28 and W7 have different polishing performances.Under the same processing conditions,the removal rate of B_4C is higher than that of W28.However,the roughness of the sapphire wafer with W28 is greater and the grinding damage layer is deeper(i.e.,Ra=1.319 nm,and Rt=2.584 nm).The removal rate of W7 is lower,the damage layer is removed(i.e.,R_a=0.194 nm,and R_t=0.361 nm),the surface quality is high,which is suitable for finishing flatness,after removal of 20 μm.The surface roughness of the finished sapphire wafer is better than that of W28.
引文
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[4]TANIKELLA B V,SIMPSON M A,CHINNAKARUPPAN P,et al.Sapphire substrates and methods of making same[P].US:8455879.2013–06–04.
[5]GAGLIARDI J J,KIM D,SOKOL J J,et al.A case for 2-body material removal in prime LED sapphire substrate lapping and polishing[J].J Manuf Processes,2013,15:348–354.
[6]王志强,方伟,豁国燕,等.LED蓝宝石衬底研磨工艺研究[J].金刚石与磨料磨具工程,2015(2):59–62.WANG Zhiqiang,FANG Wei,HUO Guoyan,et al.J Diam Abrasives Eng(in Chinese),2015,(2):59–62.
[7]熊伟,储向峰,董永平,等.不同磨料对蓝宝石晶片化学机械抛光的影响研究[J].人工晶体学报,2013,42(6):1064–1069.XIONG Wei,CHU Xiangfeng,DONG Yongping,et al.J Synth Cryst(in Chinese),2013,42(6):1064–1069.
[8]文东辉,洪滔,张克华,等.蓝宝石晶体的双面研磨加工[J].光学精密工程,2009,17(10):2493–2498.WEN Donghui,HONG Tao,ZHANG Kehua,et al.J Opt Precis Eng(in Chinese),2009,17(10):2493–2498.
[9]王建彬,朱永伟,谢春祥,等.固结磨料研磨蓝宝石单晶过程中研磨液的作用[J].光学精密工程,2014,22(11):3004–3011.WANG Jianbin,ZHU Yongwei,XIE Chunxiang,et al.J Opt Precis Eng(in Chinese),2014,22(11):3004–3011.
[10]王建彬,朱永伟,王加顺,等.研磨方式对单晶蓝宝石亚表面损伤层深度的影响[J].人工晶体学报,2014,43(5):1099–1104+1120.WANG Jianbin,ZHU Yongwei,WANG Jiashun,et al.J Synth Cryst(in Chinese).2014,43(5):1099–1104+1120.