n-Mg_2Si/p-Si异质结太阳电池的模拟及分析
|
摘要
运用AMPS-1D软件对n-Mg_2Si/p-Si异质结太阳电池进行模拟,依次讨论了Mg_2Si层厚度、掺杂浓度和温度对电池性能的影响。结果表明:随着Mg_2Si层厚度的增加,短路电流和转换效率均有较大提高;开路电压也略有升高。随着温度升高,短路电流逐渐升高,转换效率、开路电压及填充因子均不断降低。室温下,Mg_2Si层轻掺杂时的掺杂浓度在5×10~(19)cm~(-3)处,转换效率达到最大值5.518%。而同样条件下Mg_2Si层重掺杂时的转换效率更高,当掺杂浓度达到10~(21)cm~(-3)后,转换效率最大值为11.508%,填充因子最大值为0.868。
The performance of n-Mg_2Si/p-Si heterojunction solar cell was simulated based on AMPS-1D software.And the influences of the Mg_2 Si layer thickness,doping concentration and operating temperature on the battery performance were discussed in turn. The results show that: the short-circuit current and conversion efficiency were improved greatly with the increasing of Mg_2 Si layer thickness and also the circuit voltage slightly increased.With the temperature rising,the short circuit current gradually increases at first and then flatten out while the conversion efficiency,open circuit voltage and fill factor are coming down all the time. At room temperature,The conversion efficiency up to 5.518% and Mg_2 Si layer doping concentration is 5 x 1019cm~(-3)when lightly doped,while at the same condition that the conversion efficiency will be higher as it be heavily doped,the Maximum conversion efficiency is 11.508% and the filling factor is 0.868 when Mg_2 Si layer is doped to 1021cm~(-3).
The performance of n-Mg_2Si/p-Si heterojunction solar cell was simulated based on AMPS-1D software.And the influences of the Mg_2 Si layer thickness,doping concentration and operating temperature on the battery performance were discussed in turn. The results show that: the short-circuit current and conversion efficiency were improved greatly with the increasing of Mg_2 Si layer thickness and also the circuit voltage slightly increased.With the temperature rising,the short circuit current gradually increases at first and then flatten out while the conversion efficiency,open circuit voltage and fill factor are coming down all the time. At room temperature,The conversion efficiency up to 5.518% and Mg_2 Si layer doping concentration is 5 x 1019cm~(-3)when lightly doped,while at the same condition that the conversion efficiency will be higher as it be heavily doped,the Maximum conversion efficiency is 11.508% and the filling factor is 0.868 when Mg_2 Si layer is doped to 1021cm~(-3).
引文
[1]Morris R G,Redin R D,Danielson G C.Semiconducting properties of Mg2Si single crystals[J].Physical Review,1958,109(6):1909.
[2]陈茜,谢泉,闫万珺,杨创华,赵凤娟.Mg_2Si电子结构及光学性质的第一性原理计算[J].中国科学(G辑:物理学力学天文学),2008,07:825-833.
[3]Yu B,Chen D,Tang Q,et al.Structural,electronic,elastic and thermal properties of Mg2Si[J].Journal of Physics and Chemistry of Solids,2010,71(5):758-763.
[4]殷浩.Mg2Si基半导体的制备及其热电性能研究[D].浙江大学,2008.
[5]刘洪沛.Mg2Si基热电材料的制备与热电性能研究[D].北京工业大学,2009.
[6]臧树俊,周琦,马勤,安亮.金属间化合物Mg_2Si研究进展[J].铸造技术,2006,08:866-870.
[7]Mabuchi M,Kubota K,Higashi K.High strength and high strain rate superplasticity in a Mg-Mg2Si composite[J].Scripta metallurgica et materialia,1995,33(2):331-335.
[8]Mahan J E,Vantomme A,Langouche G,et al.Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy[J].Physical Review B,1996,54(23):16965.
[9]Vantomme A,Mahan J E,Langouche G,et al.Thin film growth of semiconducting Mg2Si by codeposition[J].Applied physics letters,1997,70(9):1086-1088.
[10]余宏,谢泉,肖清泉,陈茜.Mg_2Si半导体薄膜的热蒸发制备[J].功能材料,2013,08:1204-1207.
[11]Tani J,Kido H.First-principles and experimental studies of impurity doping into Mg2Si[J].Intermetallics,2008,16(3):418-423.
[12]Zhu H,Kalkan A K,Hou J,et al.Applications of AMPS-1D for solar cell simulation[C]//National center for photovoltaics(NCPV)15th program review meeting.AIP Publishing,2008,462(1):309-314.
[13]Heller M W,Danielson G C.Seebeck effect in Mg2Si single crystals[J].Journal of Physics and Chemistry of Solids,1962,23(6):601-610.
[14]Zaitsev V K,Fedorov M I,Gurieva E A,et al.Highly effective Mg2Si1-xSnxthermoelectrics[J].Physical Review B,2006,74(4):045207.
[15]Atanassov A,Baleva M.On the band diagram of Mg2Si/Si heterojunction as deduced from optical constants dispersions[J].Thin Solid Films,2007,515(5):3046-3051.
[16]Madelung O.Semiconductors:data handbook[M].Springer Science&Business Media,2012.
[17]固体物理学[M].科学出版社,2007,2:233-234.
[18]魏晋云.太阳电池填充因子与串联电阻的线性关系[J].云南师范大学学报:自然科学版,2013,33(2):39-40.
[19]郝华丽,刘文富.太阳能电池效率的影响因素分析[J].现代电子技术,2015,12:156-158.
[20]刘丹娟.单晶硅太阳电池的温度特性及温度对其影响研究[J].科技创新与应用,2014(35):54-54.
[2]陈茜,谢泉,闫万珺,杨创华,赵凤娟.Mg_2Si电子结构及光学性质的第一性原理计算[J].中国科学(G辑:物理学力学天文学),2008,07:825-833.
[3]Yu B,Chen D,Tang Q,et al.Structural,electronic,elastic and thermal properties of Mg2Si[J].Journal of Physics and Chemistry of Solids,2010,71(5):758-763.
[4]殷浩.Mg2Si基半导体的制备及其热电性能研究[D].浙江大学,2008.
[5]刘洪沛.Mg2Si基热电材料的制备与热电性能研究[D].北京工业大学,2009.
[6]臧树俊,周琦,马勤,安亮.金属间化合物Mg_2Si研究进展[J].铸造技术,2006,08:866-870.
[7]Mabuchi M,Kubota K,Higashi K.High strength and high strain rate superplasticity in a Mg-Mg2Si composite[J].Scripta metallurgica et materialia,1995,33(2):331-335.
[8]Mahan J E,Vantomme A,Langouche G,et al.Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy[J].Physical Review B,1996,54(23):16965.
[9]Vantomme A,Mahan J E,Langouche G,et al.Thin film growth of semiconducting Mg2Si by codeposition[J].Applied physics letters,1997,70(9):1086-1088.
[10]余宏,谢泉,肖清泉,陈茜.Mg_2Si半导体薄膜的热蒸发制备[J].功能材料,2013,08:1204-1207.
[11]Tani J,Kido H.First-principles and experimental studies of impurity doping into Mg2Si[J].Intermetallics,2008,16(3):418-423.
[12]Zhu H,Kalkan A K,Hou J,et al.Applications of AMPS-1D for solar cell simulation[C]//National center for photovoltaics(NCPV)15th program review meeting.AIP Publishing,2008,462(1):309-314.
[13]Heller M W,Danielson G C.Seebeck effect in Mg2Si single crystals[J].Journal of Physics and Chemistry of Solids,1962,23(6):601-610.
[14]Zaitsev V K,Fedorov M I,Gurieva E A,et al.Highly effective Mg2Si1-xSnxthermoelectrics[J].Physical Review B,2006,74(4):045207.
[15]Atanassov A,Baleva M.On the band diagram of Mg2Si/Si heterojunction as deduced from optical constants dispersions[J].Thin Solid Films,2007,515(5):3046-3051.
[16]Madelung O.Semiconductors:data handbook[M].Springer Science&Business Media,2012.
[17]固体物理学[M].科学出版社,2007,2:233-234.
[18]魏晋云.太阳电池填充因子与串联电阻的线性关系[J].云南师范大学学报:自然科学版,2013,33(2):39-40.
[19]郝华丽,刘文富.太阳能电池效率的影响因素分析[J].现代电子技术,2015,12:156-158.
[20]刘丹娟.单晶硅太阳电池的温度特性及温度对其影响研究[J].科技创新与应用,2014(35):54-54.