激光热效应对CMOS探测器的干扰机理分析
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摘要
为了研究激光热效应对CMOS探测器的干扰效应,建立了激光辐照CMOS探测器固体传热的有限元仿真模型,仿真了激光辐照CMOS的光热效应,得到CMOS探测器的表面温度分布及Si层表面的温度曲线。根据半导体电子空穴对产生公式,得到波长为1064nm的不同功率密度的激光辐照CMOS而产生的光生载流子、热生载流子。根据CMOS对于1064nm激光的饱和功率密度阈值5.87×10-3W/cm~2,得到CMOS的载流子饱和阈值。对比不同功率密度的激光辐照CMOS时的三种载流子。结果表明,功率密度为350W/cm~2的激光辐照CMOS时,热生载流子大于了CMOS的载流子饱和阈值,证明热生载流子已经占满了像元,激光的热效应已经干扰了CMOS探测器。
In order to study the interference effect of photo-thermal effect on CMOS detector,the heat transfer in solids simulation model of laser radiation CMOS detector is established based on finite element method. The surface temperature distribution of CMOS detector and the surface temperature profile of the Si layer are obtained by simulating photo-thermal effect of laser irradiation. According to the formula of semiconductor electron hole pairs,the photo-generated and thermogenic carriers are produced by irradiating 1064 nm CMOS with different power densities. The carrier saturation threshold of CMOS is obtained according to saturation power density threshold of 5. 87 × 10-3 W/cm~2 for 1064 nm lasers. In this paper,we compare the three kinds of carriers when irradiating CMOS with different power densities. The results show that when the power density is 350 W/cm~2,the thermal carrier is larger than carrier saturation threshold of CMOS. It is proved that the thermal carrier has filled the pixel and the thermal effect of the laser has disturbed CMOS detectors.
In order to study the interference effect of photo-thermal effect on CMOS detector,the heat transfer in solids simulation model of laser radiation CMOS detector is established based on finite element method. The surface temperature distribution of CMOS detector and the surface temperature profile of the Si layer are obtained by simulating photo-thermal effect of laser irradiation. According to the formula of semiconductor electron hole pairs,the photo-generated and thermogenic carriers are produced by irradiating 1064 nm CMOS with different power densities. The carrier saturation threshold of CMOS is obtained according to saturation power density threshold of 5. 87 × 10-3 W/cm~2 for 1064 nm lasers. In this paper,we compare the three kinds of carriers when irradiating CMOS with different power densities. The results show that when the power density is 350 W/cm~2,the thermal carrier is larger than carrier saturation threshold of CMOS. It is proved that the thermal carrier has filled the pixel and the thermal effect of the laser has disturbed CMOS detectors.
引文
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[13]王成恩.传热与结构分析有限元法及应用[M].北京:科学出版社,2012.
[14]于醒,刘国栋,张蓉竹.激光热效应对CCD探测响应过程的影响[J].光学与光电技术,2015,13(5):41-46.
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[2]林均仰,舒嵘,黄庚华,等.激光对CCD及CMOS图像传感器的损伤阈值研究[J].红外与毫米波学报,2008,(06):475-478.
[3]盛良,张震,张检民,等.632.8nm连续激光辐照可见光CMOS相机实验研究[J].现代应用物理,2015,(03):181-185.
[4]高润,牛春晖,李晓英.632nm激光对CCD和CMOS的干扰实验及机理分析[J].激光杂志,2016,37(9):5-9.
[5]邵铭,张乐,张雷雷,柴国庆,胡琥香.1.06μm激光对CCD、CMOS相机饱和干扰效果对比研究[J].应用光学,2014,(01):163-167.
[6]郭锋.激光对CMOS和CCD的辐照效应对比研究[D].国防科学技术大学,2013.
[7]CARRERE J P,ODDOU J P,PLACE S,et al.New mechanism of plasma induced damage on CMOS image sensor:Analysis and process optimization[J].Solid State Electronics,2011,s 65-66(1):51-56.
[8]马超龙.CMOS图像传感器像素工艺仿真与优化[D].哈尔滨:哈尔滨工程大学,2013.
[9]ELGIN M,RUSSELL D,KATULA M,et al.CMOS imager pixel design for space applications[C]//IEEE Workshop on Microelectronics and Electron Devices.IEEE,2006:1-61.
[10]PIOTTO M,BUTTI F,ZANETTI E,et al.Characterization and modeling of CMOS-compatible acoustical particle velocity sensors for applications requiring low supply voltages☆[J].Sensors&Actuators A Physical,2015,229:192-202.
[11]MEZGHANI B,TOUNSI F,REKIK A A,et al.Sensitivity and power modeling of CMOS mems single axis convective accelerometers[J].Microelectronics Journal,2013,44(12):1092-1098.
[12]冯爱新,庄绪华,薛伟,等.1064 nm、532 nm、355 nm波长脉冲激光辐照多晶硅损伤特性研究[J].红外与激光工程,2015,44(2):461-465.
[13]王成恩.传热与结构分析有限元法及应用[M].北京:科学出版社,2012.
[14]于醒,刘国栋,张蓉竹.激光热效应对CCD探测响应过程的影响[J].光学与光电技术,2015,13(5):41-46.
[15]刘恩科,朱秉升,罗晋升.半导体物理学[M].北京:电子工业出版社,2011.