基于低频低噪声检测放大器的设计与分析
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摘要
由于电力电子器件内部的低频噪声极其微弱,传统的放大器因自身本底噪声的影响,容易淹没待测器件内部的噪声。因此,为了能够检测电力电子器件内部的低频噪声,设计一款基于无噪声偏置的两级低噪声放大器。利用分立器件组成的差分放大器作为前置级放大器,搭建了具有双端口带通滤波器与三运放仪表放大等双重功能的主放大器。实验结果表明系统的通频带在0.9 Hz～80.2 kHz,具有高增益以及超低噪声的特点,同时在1 kHz时系统的噪声系数低至1.28 dB。
The low frequency noise inside the power electronic devices is extremely weak. The traditional amplifier is often affected by the background noise,low frequency noise need to be measured is submerged. Therefore,in order to measure low frequency noise of power electronic devices,a kind of low noise amplifier based on two-stage amplification is designed. The preamplifier is composed of the difference amplifier composed of JFET. The second stage amplifier using dual port and three op amp instrumentation amplifier,in order to remove noise by active high pass filter and active low-pass filter composed of a band-pass filter. The experimental results show that the system has a high gain and low noise characteristics in the 0.9 Hz～80.2 kHz,while the noise coefficient of the system is as low as 1.28 dB.
The low frequency noise inside the power electronic devices is extremely weak. The traditional amplifier is often affected by the background noise,low frequency noise need to be measured is submerged. Therefore,in order to measure low frequency noise of power electronic devices,a kind of low noise amplifier based on two-stage amplification is designed. The preamplifier is composed of the difference amplifier composed of JFET. The second stage amplifier using dual port and three op amp instrumentation amplifier,in order to remove noise by active high pass filter and active low-pass filter composed of a band-pass filter. The experimental results show that the system has a high gain and low noise characteristics in the 0.9 Hz～80.2 kHz,while the noise coefficient of the system is as low as 1.28 dB.
引文
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[10] 樊欣欣,杨连营,陈秀国.基于低频噪声检测的电力MOSFET可靠性分析[J].半导体技术,2018,43(1):75-80.
[11] Sahoolizadeh H,Jannesari A,Dousti M.A New Approach to Frequency-Domain Noise Analysis and Design of a Very-Low Noise Amplifier in Radio and Microwave Frequencies[J].Microelectronics Journal,2017,68(8):14-22.
[2] 陈晓娟,樊欣欣,吴洁.低频低噪声测量放大器的设计[J].现代电子技术,2016,39(10):116-119.
[3] Jafarnejad R,Jannesari A,Sobhi J.Pre-Distortion Technique to Improve Linearity of Low Noise Amplifier[J].Microelectronics Journal,2017,61(10):95-105.
[4] 陈晓娟,樊欣欣,吴洁.短沟道MOS器件随机电报信号噪声的检测与分析[J].半导体技术,2016,41(3):234-239.
[5] Wu Junwei,You Jianwen,Ma Huanchi,et al.Excess Low-Frequency Noise in Ultrathin Oxide-nMOSFET Arising from Valence-Band Electron Tunneling[J].IEEE Trans on Electron Devices,2016,52(9):2061-2066.
[6] 戴逸松.低频噪声精确测量装置的设计[J].仪器仪表学报,1991,12(4):306-315.
[7] 颜秉勇,顾震,高瑞,等.纳米通道单分子检测低噪音电流放大器系统的研究[J].分析化学,2015,43(7):971-976.
[8] 樊欣欣,禹旺明,陈晓娟.随机电报噪声时间参数提取方法的研究[J].半导体技术,2016,41(4):286-291.
[9] Pellegrini B,Basso G,Fiori G,et al.Improvement of the Accuracy of Noise Measurements by the Two-Amplifier Correlation Method[J].Review of Scientific Instruments,2013,26(2):68-72.
[10] 樊欣欣,杨连营,陈秀国.基于低频噪声检测的电力MOSFET可靠性分析[J].半导体技术,2018,43(1):75-80.
[11] Sahoolizadeh H,Jannesari A,Dousti M.A New Approach to Frequency-Domain Noise Analysis and Design of a Very-Low Noise Amplifier in Radio and Microwave Frequencies[J].Microelectronics Journal,2017,68(8):14-22.