Experiment on lapping 6H-SiC crystal substrate (0001) Si surfacebased on diamondparticle

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• 作者：SU JianxiuLIU XinglongLIU ZhixiangZHANG Zhuqing
• 会议时间：2012-10-19
• 关键词：SiC monocrystal substrate ; Lapping ; Material removal rate ; Surface roughness
• 作者单位：SU Jianxiu(Henan Institute of Science and Technology, Xinxiang 453003, P. R.China)LIU Xinglong,ZHANG Zhuqing(Henan University of Technology, Zhengzhou 450001, P. R. China)LIU Zhixiang(Henan Polytechnic University, Jiaozuo 454000, P. R. China)
• 母体文献：2012年中国(国际)光整加工技术及表面工程学术会议论文集
• 会议名称：2012年中国(国际)光整加工技术及表面工程学术会议
• 会议地点：无锡
• 主办单位：中国机械工程学会
• 语种：chi

摘要

The SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, suchas semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the lapping parameters, such as therotational velocity of the lapping platen and the carrier and the polishing pressure on the material removal rate (MRR) andsurface roughness Ra of SiC crystal substrate (0001) Si face based on the diamond particle in lapping. This study results willprovide the reference for developing the abrasive paste, optimizing the process parameters and researching the materialremoval mechanism in lapping of SiC crystal substrate.