Study on the in-line sputtering growth and structural properties of polycrystalline ZnO:Al on ZnO and glass

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• 作者：Jorj I. Owen^a ; ^{j.owen@fz-juelich.de} ; Wendi Zhang^a ; Dominik Kö ; hl^b ; Jü ; rgen Hü ; pkes^a
• 关键词：A1. Etching ; A1. Growth models ; A3. Sputtering ; B2. ZnO ; B3. Solar cells
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 April, 2012
• 卷：344
• 期：1
• 页码：12-18
• 文件大小：1222 K

摘要

This work endeavors to develop a better understanding of the growth of aluminum doped zinc oxide (ZnO:Al) films under relevant sputtering conditions that after etching yield good light trapping structures for use in thin-film silicon solar cells. The growth and etching characteristics of films grown on various substrates, including texture etched ZnO:Al, ZnO single crystals, and glass, are examined. ZnO:Al is shown to grow quasi-epitaxially on the textured ZnO:Al surface. While the new ZnO:Al growth maintains topographical features, similar roughness, and c-axis orientation, the sites of craters formed during etching are altered. The inclusion of a buffer layer between the textured ZnO:Al and the new ZnO:Al is shown to reset the c-axis. Growth and etching characteristics of ZnO:Al films on glass indicate that the columnar c-axis oriented grains are primarily Zn-terminated. A ZnO:Al growth model is proposed to explain the observed differences between the various substrates.