Raman spectroscopy of Pb_1−x

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• 作者：N. Romč ; evi&#x107 ; D. Stojanovi&#x107 ; M. Romč ; evi&#x107 ; D.R. Khokhlov
• 关键词：Semiconductors ; Impurity in semiconductors ; Light absorption and reflection
• 刊名：Journal of Alloys and Compounds
• 出版年：2009
• 期刊代码：45_09258388
• 类别：ms
• 出版时间：17 April 2009
• 卷：474
• 期：1-2
• 页码：26-30
• 文件大小：811 K

摘要

Raman scattering spectra of Pb_1−xSn_xTe (x = 0, 0.15 and 0.25) doped with Indium in the temperature range 10–300 K are presented. Three local modes of Indium at about 115, 155 and 190 cm⁻¹ are registered. These modes are discussed in terms of local vibrations of impurities corresponding to different In charge states. The position of these lines is independent of alloy compound, temperature and amount of added In.