Conduction in ultrathin ruthenium electrodes prepared by atomic layer deposition

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• 作者：K. Gregorczyk ; P. Banerjee¹ ; G.W. Rubloff ; ^{rubloff@umd.edu}
• 关键词：Atomic layer deposition ; Thin film ; Coatings ; Ultrathin ; Electrodes ; Ruthenium
• 刊名：Materials Letters
• 出版年：2012
• 期刊代码：59_0167577x
• 类别：ms
• 出版时间：15 April, 2012
• 卷：73
• 期：Complete
• 页码：43-46
• 文件大小：570 K

摘要

Ultrathin ruthenium layers, produced by atomic layer deposition for use in nanostructured devices, show a dramatic decrease in conductivity (~ 5 脳) when scaled down in thickness, from ~ 38 脳 10³ S cm^鈭?#xA0;1 for 24 nm films to ~ 8 脳 10³ S cm^鈭?#xA0;1 for 5 nm films. This suggests a significant change in the dominant mechanisms for electron scattering, as expected from Mayadas-Schatzkes theory for thin films, where surface/interface and grain boundary scattering dominate over electron-phonon scattering. The temperature coefficient of resistivity also decreases substantially, ~ 9 脳, with decreasing film thickness, consistent with a stronger role for electron scattering at boundaries as compared to electron-phonon scattering.